Zobrazeno 1 - 10
of 61
pro vyhledávání: '"F. SINISI"'
Autor:
E. Farci, Stefano Agnoli, Fabrizio Cavani, Maria Cristina Paganini, Gaetano Granozzi, J. Velasquez Ochoa, Luca Artiglia, Luca Malfatti, F. Sinisi
Publikováno v:
ACS Applied Nano Materials. 2:3434-3443
Two nanocomposites of different layer thicknesses were synthesized by impregnation of a rutile titania support with a reduced ceria solution. An in situ diffuse reflectance infrared fourier-transform spectroscopy-mass spectrometry study of these mate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f1b45869bb414f6938a2155074e01d98
https://doi.org/10.1021/acsanm.9b00366
https://doi.org/10.1021/acsanm.9b00366
Conference
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Conference
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Akademický článek
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Autor:
Vito F. Sinisi
Publikováno v:
Theoria. 31:218-241
In the paper “Kotarbinski’s Theory of Genuine Names”, which was published recently in this journal1, I attempted to sketch and explain a theory of genuine names formulated by Tadeusz Kotarbinski, who is perhaps Poland’s outstanding 20th centu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::123e1faae497762fb2b1a2132f83690e
https://doi.org/10.1111/j.1755-2567.1965.tb00580.x
https://doi.org/10.1111/j.1755-2567.1965.tb00580.x
Autor:
VITO F. SINISI
Publikováno v:
Theoria. 30:80-95
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7131d513c3b3f43adb29dbb63985a557
https://doi.org/10.1111/j.1755-2567.1964.tb00403.x
https://doi.org/10.1111/j.1755-2567.1964.tb00403.x
Autor:
Vito F. Sinisi
Publikováno v:
Topoi. 23:229-233
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1dbde79fd59ca1cb3db8cf830ffced01
https://doi.org/10.1007/s11245-004-8879-3
https://doi.org/10.1007/s11245-004-8879-3
Autor:
S. Carta, S. Lavanga, Ernesto Limiti, P. Calvani, Maria Cristina Rossi, F. Sinisi, E. Giovine, A. Corsaro, Gennaro Conte, Marco Girolami, V. G. Ralchenko, Daniele M. Trucchi
Publikováno v:
Diamond and related materials 18 (2009): 786–788. doi:10.1016/j.diamond.2009.01.014
info:cnr-pdr/source/autori:Calvani P. 1; Corsaro A. 1; Girolami M. 1; Sinisi F. 1; Trucchi D.M. 1-6; Rossi M.C. 1; Conte G. 1; Carta S. 2; Giovine E. 2; Lavanga S. 3; Limiti E. 4; Ralchenko V. 5/titolo:DC and RF performance of surface channel MESFETs on H-terminated polycrystalline diamond/doi:10.1016%2Fj.diamond.2009.01.014/rivista:Diamond and related materials/anno:2009/pagina_da:786/pagina_a:788/intervallo_pagine:786–788/volume:18
info:cnr-pdr/source/autori:Calvani P. 1; Corsaro A. 1; Girolami M. 1; Sinisi F. 1; Trucchi D.M. 1-6; Rossi M.C. 1; Conte G. 1; Carta S. 2; Giovine E. 2; Lavanga S. 3; Limiti E. 4; Ralchenko V. 5/titolo:DC and RF performance of surface channel MESFETs on H-terminated polycrystalline diamond/doi:10.1016%2Fj.diamond.2009.01.014/rivista:Diamond and related materials/anno:2009/pagina_da:786/pagina_a:788/intervallo_pagine:786–788/volume:18
DC and RF performance of submicron gate-length metal–semiconductor field effect transistors (MESFETs) fabricated on hydrogen-terminated polycrystalline diamond is investigated in detail for different material electronic quality (grain size in the r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c0bae8e14d360228a789d9711670bf69
https://hdl.handle.net/11590/142476
https://hdl.handle.net/11590/142476
Autor:
P. CALVANI, F. SINISI, ROSSI, Maria Cristina, D. DOMINIJANNI, E. GIOVINE, E. LIMITI, DOI . ULIS, CONTE, Gennaro
Publikováno v:
info:cnr-pdr/source/autori:Calvani, P.; Sinisi, F.; Rossi, M. C.; Conte, G.; Giovine, E.; Ciccognani, W.; Limiti, E./congresso_nome:10th International Conference on ULtimate Integration of Silicon, ULIS 2009/congresso_luogo:/congresso_data:18-20%2F03%2F2009/anno:2009/pagina_da:257/pagina_a:260/intervallo_pagine:257–260
info:cnr-pdr/source/autori:P. Calvani (1), F. Sinisi (1), M.C. Rossi (1), G. Conte (1), E. Giovine (2), W. Ciccognani (3), E. Limiti (3)/congresso_nome:10th International Conference on Ultimate Integration on Silicon/congresso_luogo:Aachen, GERMANY/congresso_data:MAR 18-20, 2009/anno:2009/pagina_da:257/pagina_a:260/intervallo_pagine:257–260
info:cnr-pdr/source/autori:P. Calvani (1), F. Sinisi (1), M.C. Rossi (1), G. Conte (1), E. Giovine (2), W. Ciccognani (3), E. Limiti (3)/congresso_nome:10th International Conference on Ultimate Integration on Silicon/congresso_luogo:Aachen, GERMANY/congresso_data:MAR 18-20, 2009/anno:2009/pagina_da:257/pagina_a:260/intervallo_pagine:257–260
Metal-Semiconductor Field Effect Transistors (MESFETs) were fabricated on polycrystalline diamond. Devices were realized to be employed in Microwave Integrated Circuits for satellite communications and high frequency power amplification, areas were d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7b457118799fdfff46a995b7d2b4aea4