Zobrazeno 1 - 10
of 11
pro vyhledávání: '"F. S. Ohuchi"'
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 12:2451-2456
Ion beam bombardment at low ion energies is of interest in both surface analysis and thin film deposition, however, concerns exist regarding preferential sputtering and chemical reduction at the surface. In this study, the rate of reduction and exten
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3153d2a385f95a705b284ecd140ae0ef
https://doi.org/10.1116/1.579192
https://doi.org/10.1116/1.579192
Autor:
F. S. Ohuchi, Q. Zhong
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 8:2107-2112
The Ni/Al2O3 system has been studied using surface sensitive techniques in an attempt to achieve fundamental understanding of metal matrix composite interfaces. Interfaces were prepared in situ in ultrahigh vacuum (UHV) systems designed for metal/cer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::37bf295fba4d5b3dd0ebf262b028fb39
https://doi.org/10.1116/1.577011
https://doi.org/10.1116/1.577011
Autor:
F. S. Ohuchi, Z. R. Dai
Publikováno v:
Applied Physics Letters. 73:966-968
Vacancy ordering was directly observed by high resolution transmission electron microscopy (HRTEM) at the heterointerface of GaSe/GaAs(100) grown by molecular beam epitaxy. Ga2Se3 crystalline film forms immediately to the GaAs (100) substrate, acting
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1d69ff56bce221198072a6fc99607c8b
https://doi.org/10.1063/1.122054
https://doi.org/10.1063/1.122054
Autor:
Taisuke, Ohta, D A, Schmidt, Shuang, Meng, A, Klust, A, Bostwick, Q, Yu, Marjorie A, Olmstead, F S, Ohuchi
Publikováno v:
Physical review letters. 94(11)
A highly anisotropic growth morphology is found for heteroepitaxial gallium sesquiselenide (Ga2Se3) on the lattice matched substrate, arsenic-terminated Si(001). Scanning tunneling microscopy of Ga2Se3 films reveals nanoscale, wirelike structures cov
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::a5cd07e49556898ff02ef9b0644edc22
https://pubmed.ncbi.nlm.nih.gov/15903873
https://pubmed.ncbi.nlm.nih.gov/15903873
Autor:
F. S. Ohuchi, M. A. Olmstead
Publikováno v:
Wiley Encyclopedia of Electrical and Electronics Engineering
The sections in this article are 1 Crystal, Chemical Bonding, and Electronic Structure 2 Thin-Film Growth 3 Properties of III–VI Materials and Thin Films Toward Device Applications 4 Summary 5 Acknowledgment
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4a60e7b35d00b96597805134b934edf5
https://doi.org/10.1002/047134608x.w3213
https://doi.org/10.1002/047134608x.w3213
Autor:
T. W. Little, F. S. Ohuchi
Publikováno v:
MRS Proceedings. 439
The interaction of nitrogen trifluoride (NF3) with silicon (Si) surfaces has been investigated by x-ray photoelectron spectroscopy (XPS). Si (100) surfaces were subjected to NF3 ion bombardment as a means of approximating plasma processing under cont
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d4d15b4a61dd2bf92bc64b6a46999768
https://doi.org/10.1557/proc-439-251
https://doi.org/10.1557/proc-439-251
Publikováno v:
Journal of Applied Physics. 110:052009
Thermal-induced domain wall motion of tip-inverted micro/nanodomains in near-stoichiometric LiNbO3 single crystals was investigated using piezoresponse force microscopy (PFM). The domain wall motion was observed in PFM phase and amplitude images at r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::622286dfa75bae5a1c38590aa7fd8cac
https://doi.org/10.1063/1.3624808
https://doi.org/10.1063/1.3624808
Publikováno v:
Microscopy and Microanalysis. 4:624-625
GaSe, a member of the III-VI compound semiconductors, and its related compounds have recently gained an considerable attention because of their high non-linear optical coefficients in the infrared ranges, making them candidates for second harmonic ge
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8676c92a8f848203fbe0171911b67945
https://doi.org/10.1017/s1431927600023242
https://doi.org/10.1017/s1431927600023242
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 12:1059
Unique properties of homoepitaxial (111) GaAs layers grown at low temperatures have not been realized mainly due to very narrow temperature range for the layer‐by‐layer growth. In this study, molecular‐beam epitaxy growth of GaAs (111) layers o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::74d757cea2cb3b207b8abb5b18df6109
https://doi.org/10.1116/1.587087
https://doi.org/10.1116/1.587087
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 11:542
The influence of substrate temperature on the growth of InGaAs layers on (111)B GaAs, has been studied. Photoluminescence (PL) spectra obtained from GaAs/InGaAs single quantum well structures show strong dependence on InGaAs growth temperature. As th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ea6225d1dc6b7551f1ae59b752313d6f
https://doi.org/10.1116/1.586797
https://doi.org/10.1116/1.586797