Zobrazeno 1 - 10
of 101
pro vyhledávání: '"F. Roqueta"'
Publikováno v:
2020 21st International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)
2020 21st International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE), Jul 2020, Cracow, Poland. pp.1-7, ⟨10.1109/EuroSimE48426.2020.9152652⟩
2020 21st International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE), Jul 2020, Cracow, Poland. pp.1-7, ⟨10.1109/EuroSimE48426.2020.9152652⟩
The manufacturing process causes silicon wafer curvature because of the thermomechanical mismatch between each layers and the substrate. This curvature depends on many factors such as the properties of the used materials (Young’s modulus, Poisson
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f54cd394fa97f50322d364d1c911e379
https://hal.archives-ouvertes.fr/hal-02972476
https://hal.archives-ouvertes.fr/hal-02972476
Publikováno v:
2019 25th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC).
This paper introduces a new model for predicting the electro-thermal behaviour and the failure of transient-voltage-suppression (TVS) diodes by finite elements with the TCAD suite Sentaurus from Synopsys©. A two-heat source description (3D simulatio
Autor:
Aurélie Girard, Guillaume Le Dain, Mohamed Boufnichel, Ahmed Rhallabi, Christophe Cardinaud, F. Roqueta
Publikováno v:
Plasma Sources Science and Technology
Plasma Sources Science and Technology, IOP Publishing, 2019, 28 (8), pp.085002. ⟨10.1088/1361-6595/ab27d0⟩
Plasma Sources Science and Technology, IOP Publishing, 2019, 28 (8), pp.085002. ⟨10.1088/1361-6595/ab27d0⟩
International audience
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5c8200125357a119c55e9b84e1972b04
https://hal.archives-ouvertes.fr/hal-02272716
https://hal.archives-ouvertes.fr/hal-02272716
Autor:
Aurélie Girard, Christophe Cardinaud, Mohamed Boufnichel, F. Roqueta, Ahmed Rhallabi, Guillaume Le Dain, Marie-Claude Fernandez
Publikováno v:
Journal of Vacuum Science and Technology A
Journal of Vacuum Science and Technology A, American Vacuum Society, 2018, 36 (3), ⟨10.1116/1.5023590⟩
Journal of Vacuum Science and Technology A, American Vacuum Society, 2018, 36 (3), ⟨10.1116/1.5023590⟩
The authors developed a tool using a multiscale approach to simulate the silicon etching using Bosch process. Their study is focused on the analysis of the effect of the oxygen addition to C4F8 plasma during the deposition pulse. This is the compleme
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2fe1ff2b57296a78bbe131c2a500a6eb
https://hal.archives-ouvertes.fr/hal-01848351
https://hal.archives-ouvertes.fr/hal-01848351
Publikováno v:
Materials Research Express
Materials Research Express, IOP Publishing Ltd, 2018, 5 (4), pp.046405. ⟨10.1088/2053-1591/aaba4b⟩
Materials Research Express, IOP Publishing Ltd, 2018, 5 (4), pp.046405. ⟨10.1088/2053-1591/aaba4b⟩
Residual stress analysis is commonly achieved through curvature measurement with the help of Stoney's formula. However, this conventional approach is inadequate for multi-layer thin film systems, which are widely used in today's microelectronics. Als
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d9a164e4f82f7cfa60c769c38602fc31
https://hal.archives-ouvertes.fr/hal-02972471
https://hal.archives-ouvertes.fr/hal-02972471
Publikováno v:
IEEE Transactions on Components Packaging and Manufacturing Technology Part B
IEEE Transactions on Components Packaging and Manufacturing Technology Part B, Institute of Electrical and Electronics Engineers (IEEE), 2014, 4 (2), pp.360-366. ⟨10.1109/TCPMT.2013.2293094⟩
IEEE Transactions on Components Packaging and Manufacturing Technology Part B, Institute of Electrical and Electronics Engineers (IEEE), 2014, 4 (2), pp.360-366. ⟨10.1109/TCPMT.2013.2293094⟩
International audience; Wafer handling during the manufacturing process introduces microcracks and flaws at the wafer edge. This paper aims at determining whether an initial crack would be able to propagate through the silicon active region of power
Autor:
F. Roqueta, A. Mokrani, Yehya Haidar, Amand Pateau, Ahmed Rhallabi, F. Taher, Mohamed Boufnichel
Publikováno v:
Journal of Vacuum Science and Technology A
Journal of Vacuum Science and Technology A, American Vacuum Society, 2016, 34 (6), ⟨10.1116/1.4966606⟩
Journal of Vacuum Science and Technology A, American Vacuum Society, 2016, 34 (6), ⟨10.1116/1.4966606⟩
An etching simulator is developed to study the two-dimensional (2D) silicon etch profile evolution under SF6/O2 inductively coupled plasma discharge. The simulator is composed of three modules: plasma kinetic module, sheath module, and etching module
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3b3e15af7fa932f67089a6478322e5f4
https://hal.archives-ouvertes.fr/hal-01723377
https://hal.archives-ouvertes.fr/hal-01723377
Akademický článek
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Autor:
F. Roqueta, P. Gardes, WeiZhen Yao, Abdellah Tougui, Soufyane Belhenini, Erwan Bruno, Cyril Pujos
Publikováno v:
2016 17th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE).
Wafer warpage become more and more critical in the semiconductor industry. As is well known, the wafer warpage is caused by the mismatch of thermal expansion coefficients (CTE) and the intrinsic stress formation in thin film during thin film depositi
Publikováno v:
2016 17th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE).
For the last decade, paraelectric BaxSr1−xTiO3 (BST) thin films have been especially studied to fabricate MIM capacitor for capacitance tuning applications. This paper describes the mechanisms of cracks apparition under BST stacked MIMIM capacitors