Zobrazeno 1 - 10
of 38
pro vyhledávání: '"F. Recht"'
Autor:
Siddharth Rajan, A. Sasikumar, Yi Pei, David F. Brown, Aaron R. Arehart, Steven A. Ringel, B. Winningham, B. Poling, Eric R. Heller, Umesh K. Mishra, Glen D. Via, F. Recht
Publikováno v:
Solid-State Electronics. 80:19-22
This paper reports direct evidence for trap-related RF output power loss in GaN high electron mobility transistors (HEMTs) grown by metal organic chemical vapor deposition (MOCVD) through increased concentration of a specific electron trap at E C −
Autor:
Giacinta Parish, Gilberto A. Umana-Membreno, Matt R. Kilburn, F. Recht, Umesh K. Mishra, Brett Nener, Martin Kocan
Publikováno v:
Solid-State Electronics. 56:56-59
We report on the effect of implantation angle on contact resistance of non-alloyed ohmic contacts to selectively implanted source/drain regions in AlGaN/GaN high electron mobility transistor (HEMT) heterostructures. Three different components of cont
Autor:
Steven P. DenBaars, Sarah L. Keller, Yi Pei, N. Fichtenbaum, R. Cuerdo, Umesh K. Mishra, F. Recht, Fernando Calle
Publikováno v:
physica status solidi c. 5:2994-2997
A study of the low temperature DC and RF performance of deep submicron AlGaN/GaN high electron mobility transistors (HEMTs) is reported. From 300 K to 100 K both extrinsic transconductance and drain current increase by ∼30%, mainly due to the lower
Autor:
Brett Nener, Martin Kocan, Umesh K. Mishra, Lee McCarthy, Giacinta Parish, F. Recht, Ian R. Fletcher, Matt R. Kilburn, Gilberto A. Umana-Membreno
Publikováno v:
Journal of Electronic Materials. 37:554-557
This paper reports results of scanning ion probe studies of silicon implantation profiles in source and drain regions of AlGaN/GaN high-electron-mobility transistor (HEMT) heterostructures. It is shown that both the undoped channel length and the tra
Autor:
Brett Nener, Umesh K. Mishra, Gilberto A. Umana-Membreno, F. Recht, J.S. Chung, Martin Kocan, Lee McCarthy, Stacia Keller, Giacinta Parish
Publikováno v:
Journal of Electronic Materials. 36:1156-1159
This paper reports results of a study of non-alloyed ohmic contacts on Si-implanted AlGaN/GaN heterostructures, obtained from current–voltage characteristics of transfer-length method (TLM) test structures. It is shown that the measured contact res
Autor:
N. Fichtenbaum, Giacinta Parish, A. Baharin, Gilberto A. Umana-Membreno, Brett Nener, F. Recht, Umesh K. Mishra, L. McCarthy, Sarah L. Keller, Roberto Menozzi, Martin Kocan
Publikováno v:
physica status solidi c. 5:1938-1940
We report on n-p junctions formed on p/p+ GaN layers by silicon ion-implantation. Post-implantation damage removal was performed by annealing at 1260 °C in N2/NH3 ambient. Rectifying behaviour observed in current-voltage measurements was associated
Autor:
Christiane Poblenz, A. Corrion, Rongming Chu, L. Shen, C. S. Suh, Umesh K. Mishra, James S. Speck, F. Recht
Publikováno v:
IEEE Electron Device Letters. 28:945-947
In this letter, we report on the microwave power and efficiency performance of AlGaN/GaN high-electron mobility transistors (HEMTs) grown by ammonia molecular beam epitaxy (ammonia-MBE) on SiC substrates. At 4 GHz, an output power density of 11.1 W/m
Autor:
Christiane Poblenz, L. Shen, Umesh K. Mishra, James S. Speck, A. Corrion, L. McCarthy, F. Recht
Publikováno v:
2007 65th Annual Device Research Conference.
In this work we report AIGaN/GaN HEMTs with nonalloyed ohmic contacts by large angle ion implantation with a contact resistance to the channel of 0.2 Omegamm.
Autor:
L. Shen, Christiane Poblenz, Rongming Chu, F. Recht, C. S. Suh, James S. Speck, Umesh K. Mishra, Yi Pei, A. Corrion
Publikováno v:
2007 65th Annual Device Research Conference.
In this paper, a report on high PAE, high breakdown-voltage HEMTs grown by ammonia MBE is discussed. First, an AlN nucleation layer was grown by plasma-assisted MBE on SiC. Then GaN buffer was grown by ammonia MBE, followed by 30 nm ammonia Al0.3Ga0.
Autor:
L. McCarthy, Christiane Poblenz, James S. Speck, Umesh K. Mishra, F. Recht, Arpan Chakraborty, A. Corrion, Siddharth Rajan
Publikováno v:
Recht, F; McCarthy, L; Rajan, S; Chakraborty, A; Poblenz, C; Corrion, A; et al.(2006). Nonalloyed ohmic contacts in AlGaN/GaN HEMTs by ion implantation with reduced activation annealing temperature. IEEE Electron Device Letters, 27(4), 205-207. UC Santa Barbara: Retrieved from: http://www.escholarship.org/uc/item/8tr215nk
This letter reports AlGaN/GaN high-electron mobility transistors with capless activation annealing of implanted Si for nonalloyed ohmic contacts. Source and drain areas were implanted with an Si dose of 1/spl times/10/sup 16/ cm/sup -2/ and were acti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f0a1c21e824b0d31cb62cf489d4ef422
http://www.escholarship.org/uc/item/8tr215nk
http://www.escholarship.org/uc/item/8tr215nk