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pro vyhledávání: '"F. Ranalli"'
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Publikováno v:
Eurasian Soil Science. 47:1069-1075
The present study illustrates a framework to evaluate soil consumption in Mediterranean regions experiencing rapid urban growth. Results indicate that high-quality soils more suitable for agriculture and forestry were mostly consumed by urbanization
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::98b31edb9b1c4c598ae77608a40bb299
https://doi.org/10.1134/s106422931410010x
https://doi.org/10.1134/s106422931410010x
Effect of Body Cooling on Subsequent Aerobic and Anaerobic Exercise Performance: A Systematic Review
Autor:
Lawrence E. Armstrong, Douglas J. Casa, Brendon P. McDermott, Julianne K Demartini, Gregory F Ranalli, Carl M. Maresh
Publikováno v:
Journal of Strength and Conditioning Research. 24:3488-3496
Body cooling has become common in athletics, with numerous studies looking at different cooling modalities and different types of exercise. A search of the literature revealed 14 studies that measured performance following cooling intervention and ha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c7c22ad45bacb447d3931e4abcb9e5e2
https://doi.org/10.1519/jsc.0b013e3181fb3e15
https://doi.org/10.1519/jsc.0b013e3181fb3e15
Autor:
A. G. Cullis, A. Tahraoui, R. J. Airey, G. Hill, F. Ranalli, Tao Wang, Peter J. Parbrook, K. B. Lee, Jie Bai
Publikováno v:
physica status solidi c. 4:120-124
Growth of AlGaN based structure on AlN buffers grown directly on sapphire is reported. Such buffers show excellent morphology but a high density of edge dislocations. Growth of GaN on such layers allows dislocation bending and annihilation. Improved
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2aacb5a8f4b43e0e68c752353348f531
https://doi.org/10.1002/pssc.200673546
https://doi.org/10.1002/pssc.200673546
Autor:
A. Frova, F. Ranalli, Alfred Forchel, M. Reinhardt, Michael Fischer, V. Gaspari, Mario Capizzi, M. Bissiri, G. Baldassarri Höger von Högersthal, Antonio Polimeni
Publikováno v:
physica status solidi (a). 190:651-654
The effects of H irradiation on the optical properties of GaAs 1-y N y epilayers in the dilute N limit have been studied. H irradiation leads to a progressive and finally complete passivation of bound exciton levels related to N complexes. A further
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3f6fc7abd3db7b675082eae8427d1caa
https://doi.org/10.1002/1521-396x(200204)190:3<651::aid-pssa651>3.0.co
https://doi.org/10.1002/1521-396x(200204)190:3<651::aid-pssa651>3.0.co
Autor:
A. Miriametro, Mario Capizzi, M. Fischer, G. Baldassarri Höger von Högersthal, M. Bissiri, A. Frova, M. Geddo, M. Reinhardt, Antonio Polimeni, F. Ranalli, V. Gaspari, Alfred Forchel
Publikováno v:
Physica B: Condensed Matter. :850-853
Photoluminescence and photoreflectance spectroscopy are used to investigate the electronic properties of InxGa1−xAs1−yNy/GaAs heterostructures treated with low-energy atomic hydrogen. With increasing hydrogen doses, the InxGa1−xAs1−yNy optica
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2f480c4a17d9bf5f724dc9717554aa73
https://doi.org/10.1016/s0921-4526(01)00911-5
https://doi.org/10.1016/s0921-4526(01)00911-5
Autor:
M. Bissiri, V. Gaspari, G. Baldassarri H. v. H., F. Ranalli, A. Polimeni, M. Capizzi, A. Nucara, M. Geddo, M. Fischer, M. Reinhardt, A. Forchel
Publikováno v:
Acta Physica Polonica A. 100:365-371
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c5942ac51acbded7ec2b09f9af3ccc64
https://doi.org/10.12693/aphyspola.100.365
https://doi.org/10.12693/aphyspola.100.365
The origin of the high ideality factor in AlGaN-based quantum well ultraviolet light emitting diodes
Publikováno v:
physica status solidi (b). 247:1761-1763
The ideality factor of AlGaN-based quantum well ultraviolet light emitting diodes (LEDs) is found to be dependent on both material quality and the presence of electron blocking layer (EBL). The ideality factor of the 340 nm LEDs decreases from 6.9 to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1b3ddd7b94b149bba51ef5d7830098cd
https://doi.org/10.1002/pssb.200983617
https://doi.org/10.1002/pssb.200983617
Publikováno v:
Journal of Crystal Growth. 311:2857-2859
The effect of the AIGaN electron blocking layer (EBL) thickness on the electrical and optical properties of 310 nm AIGaN single quantum well (SQW) light-emitting diodes (LEDs) has been investigated. A large ideality factor extracted from the current-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0774388964dc68ccaaf5b4ad6e5e7527
https://doi.org/10.1016/j.jcrysgro.2009.01.030
https://doi.org/10.1016/j.jcrysgro.2009.01.030
Autor:
Rebecca L. Stearns, Douglas J. Casa, Brendon P. McDermott, Matthew S. Ganio, Rebecca M. Lopez, Carl M. Maresh, Gregory F Ranalli, Lawrence E. Armstrong, Julie K. DeMartini
Publikováno v:
Journal of strength and conditioning research. 25(8)
Hyperthermia is common among athletes and in a variety of environments. The purpose of this study was to evaluate the effectiveness of cooling methods on core body temperature, heart rate (HR), and perceptual readings in individuals after exercise. S
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b144a7f234f26dce4f078fcd768c649a
https://pubmed.ncbi.nlm.nih.gov/21760549
https://pubmed.ncbi.nlm.nih.gov/21760549