Zobrazeno 1 - 2
of 2
pro vyhledávání: '"F. Rampazz"'
Autor:
C. De Santi, M. Buffolo, I. Rossetto, T. Bordignon, E. Brusaterra, A. Caria, F. Chiocchetta, D. Favero, M. Fregolent, F. Masin, N. Modolo, A. Nardo, F. Piva, F. Rampazzo, C. Sharma, N. Trivellin, G. Zhan, M. Meneghini, E. Zanoni, G. Meneghesso
Publikováno v:
e-Prime: Advances in Electrical Engineering, Electronics and Energy, Vol 1, Iss , Pp 100018- (2021)
Several mechanisms may contribute to the degradation of GaN transistors; in this paper we discuss the main processes that limit the lifetime of GaN power devices, with focus on the following relevant aspects: (i) the degradation/breakdown induced by
Externí odkaz:
https://doaj.org/article/78df0b8f79f44b6cb96de56f0a33eabf
Autor:
G. Giorgi, D. Berto, M. Formalewicz, C. Gion, F. Rampazz, L. Manfra, M.E. Molina Jack, M. Lipizer, M. Giani, I. Hatzianestis, H. Kaberi, C. Parinos, C. Tsangaris, C. Zeri, M. Fafandjel, N. Mikac, D. Joksimic, A. Castelli, M. Dobnikar, M. Cara, I. Ujević, S. Matijević
Methodological proposal for harmonized sampling procedure, analytical methodologies
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::70f8cb15719b97995fc3f6f73e220f22