Výsledky vyhledávání

Growth and characterization of thin‐film compound semiconductor photovoltaic heterojunctions

Autor: R. P. Patterson, M. S. Ayyagari, Y. J. Juang, Lawrence L. Kazmerski, F. R. White

Publikováno v: Journal of Vacuum Science and Technology. 14:65-68

The fabrication and characteristics of several vacuum‐deposited photovoltaic heterojunctions involving ternary compounds (CuInSe2, CuInS2, and CuInTe2) and a binary compound (InP) with Cds are described. The light and dark IV characteristics, spect

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::515ee726eb5a55cd866ad3ccddea9d27
https://doi.org/10.1116/1.569173

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Electron and X-ray diffraction analyses of ternary compound (I–III–VI2) thin films

Autor: F. R. White, A. J. Merrill, M. S. Ayyagari, G. A. Sanborn, L.L. Kazmerski

Publikováno v: Thin Solid Films. 37:323-334

An investigation of CuInS 2 , CuInSe 2 and CuInTe 2 thin films by X-ray and electron microscopy analyses is presented. X-ray diffraction data on both the source (powder) material and the resulting thin films are reported. These data are compared with

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a8fa27369261d5770e4e4230d75cfe18
https://doi.org/10.1016/0040-6090(76)90602-7

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Growth and properties of vacuum deposited CuInSe2 thin films

Autor: F. R. White, Lawrence L. Kazmerski, G. A. Sanborn, M. S. Ayyagari

Publikováno v: Journal of Vacuum Science and Technology. 13:139-144

The vacuum deposition of CuInCe2 thin films is reported. As‐deposited films are generally n‐type due to selenide deficiencies. The temperature dependence of film mobility, conductivity, and carrier concentration are presented and indicate the dom

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1c1f19d4048e0ade9702062ea3a97d06
https://doi.org/10.1116/1.568808

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Growth of CuInSe2 films using molecular beam epitaxy

Autor: S. P. Grindle, F. R. White, L. L. Kazmerski, A. H. Clark, M. C. Graf

Publikováno v: Journal of Vacuum Science and Technology. 16:287-289

Molecular beam epitaxy has been used to grow single crystals of CuInSe2 epitaxially on CdS (0001) at 300 °C. Film composition, as determined from Auger spectroscopy, is within a few percent of stoichiometry in our best films, but all films show a va

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1cfc5ff6b7b670105329e1cd32171dc9
https://doi.org/10.1116/1.569928

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Thin‐film CuInSe2/CdS heterojunction solar cells

Autor: F. R. White, Lawrence L. Kazmerski, G. K. Morgan

Publikováno v: Applied Physics Letters. 29:268-270

The fabrication procedures and characteristics of several thin‐film p‐CuInSe2/n‐CdS heterojunction solar cells are presented. Two modes of operation (illumination through CuInSe2 or through CdS) are discussed. Efficiencies in the range of 4–5

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::55cdfcbd45a771bdb41fefda6ee2ec4a
https://doi.org/10.1063/1.89041

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Auger analysis of CdS—CuInSe2thin-film solar cells

Autor: L.L. Kazmerski, A. J. Merrill, R. B. Cooper, F. R. White

Publikováno v: IEEE Transactions on Electron Devices. 24:496-498

CdS-CuInSe 2 thin-film solar cells are examined by Auger electron spectroscopy The effects of device fabrication and post-deposition procedures on the depth-compositional profiles and the performance of these photovoltaic devices are presented. The t

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f2f4ac049e63dc9fc015b78e11009f77
https://doi.org/10.1109/t-ed.1977.18766

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