Zobrazeno 1 - 10
of 27
pro vyhledávání: '"F. R. Nash"'
Publikováno v:
Journal of Applied Physics. 74:1510-1520
Various types of InP-based semiconductor lasers, Fabry–Perot (FP), and distributed feedback (DFB), in different wavelength regions of 1.3, 1.48, and 1.55 μm have been subjected to human-body-model electrostatic discharge (ESD) testing. The reverse
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::52f3d869d39028b9f714da729e67efe2
https://doi.org/10.1063/1.354850
https://doi.org/10.1063/1.354850
Autor:
Niloy K. Dutta, F. R. Nash
Publikováno v:
Laser-Induced Damage in Optical Materials: 2008.
Multi-stripe laser diodes are important for a wide range of applications including pump sources for high power fiber amplifiers and industrial applications. It is now believed that multimode single stripe laser diodes with high reliability have been
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b6c647dc0b1bc227c9c945bb21d0698f
https://doi.org/10.1117/12.804483
https://doi.org/10.1117/12.804483
Autor:
D. D. Cook, F. R. Nash
Publikováno v:
Journal of Applied Physics. 46:1660-1672
We report on experimental evidence for gain−induced guiding and refractive−index antiguiding along the junction plane of stripe−geometry double−heterostructure GaAs lasers. It had previously been found that carrier diffusion out of the active
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::200428ac0646789713498ce422dcec24
https://doi.org/10.1063/1.321769
https://doi.org/10.1063/1.321769
Autor:
R. L. Hartman, F. R. Nash
Publikováno v:
Journal of Applied Physics. 50:3133-3141
It has been suggested that the long‐term degradation mode in (Al,Ga)As double‐heterostructure lasers is caused by the growth of an optically thick reflectivity‐lowering oxide formation on the emissive portion of the mirror facets. We find that
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3bf57003b444fbf13ca5ac1255f22658
https://doi.org/10.1063/1.326394
https://doi.org/10.1063/1.326394
Autor:
F. R. Nash, B. W. Hakki
Publikováno v:
Journal of Applied Physics. 45:3907-3912
Catastrophic failure in GaAs double‐heterostructure (DH) injection lasers is shown to manifest itself in two ways concurrently: rupture of one or both laser mirrors, and internal damage to the laser active region. When the electroluminescent emissi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f1f620121bde04fdbd86a73f06996857
https://doi.org/10.1063/1.1663885
https://doi.org/10.1063/1.1663885
Publikováno v:
AT&T Technical Journal. 64:661-669
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a7de431fc54d4a8d9af80ae10ed58857
https://doi.org/10.1002/j.1538-7305.1985.tb00444.x
https://doi.org/10.1002/j.1538-7305.1985.tb00444.x
Publikováno v:
Journal of Applied Physics. 52:48-54
We demonstrate that reduced reflectivity facet coatings of Al2O3 on both mirrors can increase the output power levels at which ’’kinks’’ in the light‐current characteristics of proton‐delineated 12‐μm stripe‐geometry (Al,Ga)As lasers
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4068c1eac2e46f5c00c61834931e6687
https://doi.org/10.1063/1.329814
https://doi.org/10.1063/1.329814
Autor:
James P. Gordon, F. R. Nash
Publikováno v:
Physical Review A. 12:2472-2486
We discuss some implications of the description of spontaneous emission of radiation which has been offered by Jaynes and his collaborators in their "neoclassical" extension of semiclassical electrodynamics. In particular, we examine the thermal-equi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::daa8b49191f3ba886e6923fd5a00e22a
https://doi.org/10.1103/physreva.12.2472
https://doi.org/10.1103/physreva.12.2472
Publikováno v:
AT&T Technical Journal. 64:717-764
Outlines are given for eight alternative black-box (i.e., input-output) methodologies that are appropriate for estimating, from external characteristics, the reliability of semiconductor lasers or other gradually degrading manufactured products with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::19f34931b491b71b0b93b6fed983b843
https://doi.org/10.1002/j.1538-7305.1985.tb00446.x
https://doi.org/10.1002/j.1538-7305.1985.tb00446.x
Autor:
J. C. Dyment, F. R. Nash, S. E. Haszko, R. L. Hartman, H. M. Marcos, G. A. Rozgonyi, C. J. Hwang
Publikováno v:
Applied Physics Letters. 24:481-484
By the addition of phosphorus to the ternary layers of standard double‐heterostructure GaAs injection lasers, significant reductions in lasing current threshold and increases in differential quantum efficiency have been obtained. Additional measure
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c36c46c711848a51bc3fe505bfef789
https://doi.org/10.1063/1.1655020
https://doi.org/10.1063/1.1655020