Zobrazeno 1 - 10
of 72
pro vyhledávání: '"F. R. Kessler"'
Publikováno v:
Journal of Applied Physics. 80:4685-4690
The photoacoustic effect and a similar thermoacoustic effect with an alternating current (electroacoustic effect) are used to investigate the spatial distribution of heat sources in crystalline silicon solar cells. The use of a reference signal produ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5e01097e9fe61448f0ad79cb803fa3d0
https://doi.org/10.1063/1.363452
https://doi.org/10.1063/1.363452
Publikováno v:
Journal of Crystal Growth. 157:85-89
Magnetotransport measurements at magnetic fields up to 14 T were performed on SiGe layers grown on n-type (001) Si by MBE. The envelope for possible mobility distributions was evaluated from the magnetic field dependence of the components of the cond
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c91fb4e90259fd8dd7d5f5a6ba4677d2
https://doi.org/10.1016/0022-0248(95)00376-2
https://doi.org/10.1016/0022-0248(95)00376-2
Publikováno v:
Physical Review B. 48:2282-2291
Superlattices (SL's) composed of thin Si and Ge layers (Si 12 Ge 12 , Si 19 Ge 9 ) have been implanted with As, Ge, and Ga ions with doses ranging from 1×10 13 to 1×10 14 ions cm -2 , and thermally annealed at 600 o C for 30 min. The disordering an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::429cc71c1ab2a0f632d7dff9dc08b1d2
https://doi.org/10.1103/physrevb.48.2282
https://doi.org/10.1103/physrevb.48.2282
Publikováno v:
Applied Surface Science. :501-506
Thin Si/Ge superlattices (SLs) have been ion implanted with As, Ge and Ga at doses ranging from 1 × 1013 to 1 × 1014 ions · cm-2 and annealed at 600°C during 30 min. We study the disorder created by the incoming ions and calculate the intermixing
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ccc1394f8c35ffd1e7c5bf9099fa4869
https://doi.org/10.1016/0169-4332(93)90709-k
https://doi.org/10.1016/0169-4332(93)90709-k
Publikováno v:
physica status solidi (b). 173:765-773
The polarization modulation spectroscopy of the (integral) Faraday and Kerr rotation of amorphous germanium and silicon films permits the separation of the magnetooptical contributions from various interband transitions with high sensitivity. The ana
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7b4f717b6041f8e9e1aa6309d275d923
https://doi.org/10.1002/pssb.2221730230
https://doi.org/10.1002/pssb.2221730230
Publikováno v:
Journal of Applied Physics. 72:471-477
Si1−xGex alloy films and SimGen superlattices (SLs) were prepared by molecular beam epitaxy on 〈001〉 silicon wafers. The crystalline quality of the films is characterized by analyzing the x‐ray diffraction pattern. The intensity measured at c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7381e46ab8b606329788a5879450d583
https://doi.org/10.1063/1.351877
https://doi.org/10.1063/1.351877
Autor:
F. R. Kessler, F. Dildey
Publikováno v:
physica status solidi (b). 169:141-150
Magnetoplasma reflection spectra of heavily doped silicon in terms of Kerr ellipticity and rotation are presented in the infrared wavelength range from 4 to 25 μm. For carrier concentrations from 3 × 1019 to 1020 cm−3, peak rotation angles of abo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::24cb3563090f4b9d5d3e619873c75d93
https://doi.org/10.1002/pssb.2221690117
https://doi.org/10.1002/pssb.2221690117
Autor:
F. R. Kessler, H. Bettin
Publikováno v:
Physica Status Solidi (a). 127:561-565
A new explanation of the fast expansion of photogenerated free carriers in direct-bandgap semiconductors is given, based on the strong reabsorption of radiative band-to-band transitions which are greatly increased by stimulated emission. Eine neue Er
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9f147b4b5e45d3da004051ba97112fb4
https://doi.org/10.1002/pssa.2211270233
https://doi.org/10.1002/pssa.2211270233
Publikováno v:
physica status solidi (b). 167:349-362
In crossed electric and magnetic fields inside an intrinsic semiconductor a free carrier compression takes place due to the Lorentz force (LF). This leads to a free carrier profile containing regions of enhancement as well as of depletion of free ele
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e905bee1210f43fe99f701d88e5d08d0
https://doi.org/10.1002/pssb.2221670136
https://doi.org/10.1002/pssb.2221670136
Publikováno v:
Physica Status Solidi (a). 126:545-552
The photoacoustic signal (PAS) depends on the spatial distribution of heat sources in the sample which is irradiated and on the modulation frequency of the radiation. In the case of solar cells, this distribution depends on (i) the optical absorption
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::80242513a555568178886f8b2b91991a
https://doi.org/10.1002/pssa.2211260226
https://doi.org/10.1002/pssa.2211260226