Zobrazeno 1 - 10
of 15
pro vyhledávání: '"F. R. Chien"'
Publikováno v:
Journal of Crystal Growth. :961-964
A great improvement of optical quality was observed from a ZnCdSe/ZnSe/ZnMgSSe single quantum well separate-confinement heterostructure grown on GaAs substrate with ZnSe/ZnCdSe strained-layer superlattices (SLS) buffer layers by molecular beam epitax
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d0c8b2a475d29a5f00146a159bcfc019
https://doi.org/10.1016/s0022-0248(99)00035-4
https://doi.org/10.1016/s0022-0248(99)00035-4
Publikováno v:
Journal of Crystal Growth. :506-509
This work studied the structural and optical properties of ZnTe epilayers grown on GaAs substrates with ZnSe/ZnTe strained-layer superlattices buffer layers. Photoluminescence spectra clearly distinguished the strong free exciton peaks, weak donor–
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f955f5c8daf7b0fcca1df7e5c1004528
https://doi.org/10.1016/s0022-0248(98)01387-6
https://doi.org/10.1016/s0022-0248(98)01387-6
Publikováno v:
Acta Materialia. 46:2151-2171
The stress-induced tetragonal to monoclinic (t→m) martensitic transformation, stress-induced ferroelastic domain switching, and dislocation slip were induced by Vickers microindentation at elevated temperatures in polydomain single crystals of 3 mo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3e2b1736f77a0482b7a68e779797c37c
https://doi.org/10.1016/s1359-6454(97)00444-8
https://doi.org/10.1016/s1359-6454(97)00444-8
Publikováno v:
Acta Materialia. 44:2265-2283
Low temperature (20–900°C) plastic deformation in TiC 0.91 single crystals has been studied using microindentations on (111), (001) and (110) surfaces, the dislocation structures around microindents being characterized by transmission electron mic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::244b97d93a3d4f888b026e07740696eb
https://doi.org/10.1016/1359-6454(95)00360-6
https://doi.org/10.1016/1359-6454(95)00360-6
Publikováno v:
Journal of Materials Research. 11:580-592
Single crystal GaN films with a wurtzite structure were grown on the basal plane of sapphire. A high density of threading dislocations parallel to the c-axis crossed the film from the interface to the film surface. They were found to have a predomina
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c3a607d85e59cfc9ce6f0d211ec56748
https://doi.org/10.1557/jmr.1996.0071
https://doi.org/10.1557/jmr.1996.0071
Autor:
F. R. Chien, Arthur H. Heuer
Publikováno v:
Philosophical Magazine A. 73:681-697
The shrinkage rates of small prismatic dislocation loops introduced by high-temperature plastic deformation in 9·4 and 18 mol% Y2O3-stabilized cubic ZrO2 single crystals have been determined via sequential observation of thin transmission electron m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::be2cbb921b4a107d5577d7138c9f7211
https://doi.org/10.1080/01418619608242990
https://doi.org/10.1080/01418619608242990
Publikováno v:
Journal of Applied Physics. 77:3138-3145
The lattice mismatch in chemically vapor deposited epitaxial β‐SiC (3C‐SiC) films on 6H‐ and 15R‐SiC (0001) substrates was investigated using a high‐resolution x‐ray diffractometer. The misfit parallel and perpendicular to the growth pla
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cda98f38aa02489f0fa7ea59311d26a8
https://doi.org/10.1063/1.358667
https://doi.org/10.1063/1.358667
Publikováno v:
Philosophical Magazine A. 68:325-348
A transmission electron microscopy study is presented of sub-boundary defect structures in single crystal TiC. Sub-boundaries consisting of organized dislocation arrays and hexagonal networks were observed. The Burgers vectors of dislocations in the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fe6f4e2a6e67a6206850e489a42d812e
https://doi.org/10.1080/01418619308221208
https://doi.org/10.1080/01418619308221208
Publikováno v:
Applied Physics Letters. 68:2678-2680
Lattice defects in GaN epilayers grown on 6H–SiC(0001) by metalorganic vapor phase epitaxy (MOVPE) have been characterized by transmission electron microscopy (TEM). The predominant defects in the film were threading dislocations and half‐loops w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9223ada9a9bf6ac0e33412087a98c3d7
https://doi.org/10.1063/1.116279
https://doi.org/10.1063/1.116279
Publikováno v:
Extended Abstracts of the 1997 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::09f6707a90036a9650811215d76b3f2a
https://doi.org/10.7567/ssdm.1997.c-6-1
https://doi.org/10.7567/ssdm.1997.c-6-1