Zobrazeno 1 - 10
of 54
pro vyhledávání: '"F. Pruvost"'
Autor:
Fabrice Semond, Yvon Cordier, P. Lorenzini, Jean Massies, C. Chaix, Mathieu Leroux, F. Pruvost
Publikováno v:
physica status solidi c. 3:2325-2328
In the present work, AlGaN/GaN quantum wells and High Electron Mobility Transistors (HEMTs) have been grown by molecular beam epitaxy on Si(111) and GaN on sapphire templates. The optical quality and the electrical properties were studied by low temp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3140bdc642070931e67eea6f2bce6d1c
https://doi.org/10.1002/pssc.200565423
https://doi.org/10.1002/pssc.200565423
Akademický článek
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Publikováno v:
Diamond and Related Materials. 11:1332-1336
The erbium carbide formation on homoepitaxial C(100) diamond thin films has been studied by low-energy electron diffraction (LEED), X-ray photoelectron spectroscopy (XPS), grazing-incidence X-ray diffraction (GIXD) and Raman spectroscopy. Diamond fil
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf1e3a68b6829aead1027a3d30442042
https://doi.org/10.1016/s0925-9635(01)00652-5
https://doi.org/10.1016/s0925-9635(01)00652-5
Publikováno v:
physica status solidi (a). 186:303-307
The optical transmittance and reflectance of heavily boron-doped (2 × 10 20 cm -3 < [B] < 2 × 10 21 cm -3 ) epitaxial diamond layers deposited by MPCVD were measured in the infrared range. While T-dependent measurements confirmed the metallic chara
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7f3a34987f281e266def603d338b2037
https://doi.org/10.1002/1521-396x(200108)186:2<303::aid-pssa303>3.0.co
https://doi.org/10.1002/1521-396x(200108)186:2<303::aid-pssa303>3.0.co
Publikováno v:
Applied Surface Science. 166:119-124
The atomic and electronic characteristics of homoepitaxial C(100) thin films and their reactions with very thin erbium deposits have been studied by low-energy electron diffraction (LEED) and photoelectron spectroscopy (X-ray photoelectron spectrosco
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::630d94de48a8867f7f6978ce42f69ef6
https://doi.org/10.1016/s0169-4332(00)00392-5
https://doi.org/10.1016/s0169-4332(00)00392-5
Publikováno v:
Diamond and Related Materials. 9:295-299
As the boron incorporation level and the wavelength of the exciting laser were varied, we observed systematic modifications of the Raman spectra of homoepitaxial diamond films. A pronounced change in the lineshape of the zone-center optical Raman pea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c54467eb14794559c494f7f5187a508c
https://doi.org/10.1016/s0925-9635(99)00241-1
https://doi.org/10.1016/s0925-9635(99)00241-1
Publikováno v:
Diamond and Related Materials. 9:1041-1045
Investigation of deep levels in the depletion zone of boron-doped homoepitaxial diamond films is achieved from analysis of the transient responses of Schottky junctions. The active layer consists of a homoepitaxial film grown by microwave plasma deco
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5af11cb61b4ee0218d569e62719044af
https://doi.org/10.1016/s0925-9635(99)00367-2
https://doi.org/10.1016/s0925-9635(99)00367-2
Autor:
Alain Deneuville, Dominique Ballutaud, J. Chevallier, F. Pruvost, François Jomard, J.-M. Le Duigou, B. Theys
Publikováno v:
Diamond and Related Materials. 9:1171-1174
The diffusion and out-diffusion properties of hydrogen have been investigated in homoepitaxial layers of CVD boron-doped diamond which have been exposed to a deuterium microwave plasma. The diffusion experiments show that the onset of (B, H) pair dis
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a14f39953807b5399f1251a13b50f7aa
https://doi.org/10.1016/s0925-9635(99)00273-3
https://doi.org/10.1016/s0925-9635(99)00273-3
Autor:
B. Theys, Etienne Gheeraert, Dominique Ballutaud, Alain Deneuville, J. Chevallier, François Jomard, F. Pruvost
Publikováno v:
physica status solidi (a). 174:73-81
The diffusion properties of hydrogen have been investigated in homoepitaxial layers of CVD boron doped diamond as a function of the diffusion temperature, the boron dopant concentration and the nature of the hydrogen source (rf or microwave plasma).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::170663af12b619e9ffcd16da61ed2ccb
https://doi.org/10.1002/(sici)1521-396x(199907)174:1<73::aid-pssa73>3.0.co
https://doi.org/10.1002/(sici)1521-396x(199907)174:1<73::aid-pssa73>3.0.co
Akademický článek
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