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A DC-30 GHz high performance packaged RF MEMS SPDT switch

Autor: Pierre Blondy, C Dorion, F. Courtade, Romain Stefanini, A.H. Zahr, L.Y. Zhang, F. Pressecq

Publikováno v: Microwave Conference (EuMC), 2015 European
Microwave Conference (EuMC), 2015 European, Sep 2015, Paris, France. pp.1015-1017, ⟨10.1109/EuMC.2015.7345938⟩

International audience; This paper deals with the development of an RF MEMS SPST (Single-Pole Single-Throw) and SPDT (Single-Pole double-Throw) switch fabricated on a glass substrate with hermetic package. The fabricated SPDT switch leads to a compac

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::993bffec146cf0873f19f7af1bf50225
https://doi.org/10.1109/eumc.2015.7345938

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[Untitled]

Autor: Bernard Courtois, F. Pressecq, J. Goy, J.M. Karam

Publikováno v: Analog Integrated Circuits and Signal Processing. 29:95-104

CMOS image sensors (or APS: Active pixel sensors) are now the technology of choice for most imaging applications, such as digital video cameras. Whereas their sensitivity doesn't reach the one of the best actual CCD's (whose fill factor is about 100%

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::11dd2ed040be92b894b8f2fd6a6d0fe7
https://doi.org/10.1023/a:1011286415014

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CMOS-compatible smart temperature sensors

Autor: S. Sifflet, J.M. Karam, R.A. Bianchi, Bernard Courtois, F. Pressecq, F.Vinci Dos Santos

Publikováno v: Microelectronics Journal
Microelectronics Journal, Elsevier, 1998, September 1998, pp.627-636. ⟨10.1016/S0026-2692(98)00026-3⟩

The properties, characteristics, applications and sensing principles of most of the present-day integrated smart temperature sensors are discussed in this paper. A CMOS process-compatible temperature sensor developed for low-cost high-volume integrat

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c54850a40dcf541e21975005731d17f4
https://doi.org/10.1016/s0026-2692(98)00026-3

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Design and test of an active pixel sensor (APS) for space applications

Autor: Jerome Goy, Bernard Courtois, F. Pressecq, Jean Michel Karam

Publikováno v: Proceedings-of-the-SPIE-The-International-Society-for-Optical-Engineering

A lot of studies have already ben realized on CMOS Image sensor but a few of them deals about the improvements which can be done to the commonly used pixel architecture. While this architecture of 3 or 4 transistors is very stable and has proved many

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a3cc21f3f9c49ef532291de7576751cb
https://hal.archives-ouvertes.fr/hal-00007842

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Design of an APS CMOS image sensor for space applications using standard CAD tools and CMOS technology

Autor: F. Pressecq, Jerome Goy, Bernard Courtois, Jean Michel Karam

Publikováno v: SPIE Proceedings.

CMOS image sensors are now becoming the technology of choice for most imaging applications, such as digital video cameras. The spatial field, in particular, is being interested in this new kind of sensor because of its low cost, its multiple function

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::60ef0a1c799d53bd65f6fdf9d6f9d21e
https://doi.org/10.1117/12.382275

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CMOS compatible temperature sensor with digital output for wide temperature range applications

Autor: R.A. Bianchi, F. Pressecq, S. Sifflet, Bernard Courtois, R Nadal, J.M. Karam

Publikováno v: 5th-International-Workshop-Thermal-Investigations-of-ICs-and-Systems
Microelectronics Journal
Microelectronics Journal, Elsevier, 2000, Sept.-Oct. 31(9-10):, pp.803-10. ⟨10.1016/S0026-2692(00)00062-8⟩

A CMOS process compatible wide range temperature sensor with a CMOS digital output is described. In terms of accuracy, a temperature error smaller than 0.25 degrees C RMS (with two second order temperature compensations, an on-chip one and an externa

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::17d40f8e60c452f53310677da64729fa
https://hal.archives-ouvertes.fr/hal-00007863

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CMOS compatible temperature sensor based on the lateral bipolar transistor for very wide temperature range applications

Autor: S. Sifflet, F. Vinci Dos Santos, F. Pressecq, R.A. Bianchi, J.M. Karam, Bernard Courtois

Publikováno v: Sensors and Actuators A: Physical
Sensors and Actuators A: Physical, Elsevier, 1998, Nov. 1998; A71(1-2):, pp.3-9

A CMOS process compatible wide range temperature sensor that takes advantage of the lateral bipolar transistor is described. Concerning accuracy, a temperature error of 0.34 degrees C rms in current mode (with an on-chip 2nd-order temperature compens

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::88c419d260b2f575ce10119892854054
https://hal.archives-ouvertes.fr/hal-00007891

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