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pro vyhledávání: '"F. Pfirsch"'
Akademický článek
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Autor:
H.-J. Schulze, Franz Josef Niedernostheide, Philip Christoph Brandt, Andre Rainer Stegner, Wolfgang Wagner, Frank Umbach, Christian Philipp Sandow, Hans-Peter Felsl, F. Pfirsch, F. Santos
Publikováno v:
2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD).
The continued shrinking of IGBT chips calls for new design approaches to ensure reliable and stable switching operation during the chip lifetime. We demonstrate a new asymmetric gate oxide concept with a designed variable thickness that leads to stab
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::63efafa71c5ab018f87d5a47de328d28
https://doi.org/10.1109/ispsd.2018.8393593
https://doi.org/10.1109/ispsd.2018.8393593
Publikováno v:
IEEE Transactions on Electron Devices. 60:551-562
This paper gives an overview about different failure mechanisms which limit the safe operating area of power devices. It is demonstrated how the device internal processes can be investigated by means of device simulation. For instance, the electrothe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9580bfb8ec4993e7af421bd734d65d06
https://doi.org/10.1109/ted.2012.2225148
https://doi.org/10.1109/ted.2012.2225148
Publikováno v:
2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).
Current filaments are inherently three-dimensional phenomena regardless of the chip topography, which can be stripe-or checkerboard-shaped. Therefore, we consider an alter-native mapping of the real-chip IGBT cell topography to a quasi-3D simulation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::38586b40d505bf7b0758a1adfb9bd77d
https://doi.org/10.1109/sispad.2016.7605176
https://doi.org/10.1109/sispad.2016.7605176
Autor:
Roman Baburske, Antonio Vellei, F. Pfirsch, H.-J. Schulze, Haybat Itani, Alexander Philippou, Franz Josef Niedernostheide, Christian Jaeger, Johannes Georg Laven
Publikováno v:
2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD).
A failure mechanism in the edge termination of a 1200V IGBT during overcurrent turn-off is studied with simulations and verified by experiments. The position of the destruction in the experiment can be correlated to the formation of a critical filame
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::066e4d2d18550200adf95d2c93857f2a
https://doi.org/10.1109/ispsd.2015.7123402
https://doi.org/10.1109/ispsd.2015.7123402
Autor:
F. Pfirsch, C. Tochterle, Franz Josef Niedernostheide, Christian Philipp Sandow, Roman Baburske
Publikováno v:
2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).
TCAD simulations of power devices are an important tool to investigate destruction mechanisms of power diodes and IGBTs. It is found that the dynamics of filamentation is the key for understanding the limits of the safe operation area. For both diode
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::20d45073b2040865328bb6cc95f0d9d8
https://doi.org/10.1109/sispad.2014.6931560
https://doi.org/10.1109/sispad.2014.6931560
Publikováno v:
2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD).
An improved understanding of the physical processes leading to the formation of current filaments and latch-up in large arrays of monolithically integrated high voltage (3.3kV) trench-IGBT cells during the turn-off process of the device is the prereq
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5326246ab82be0e68eaa7ebf9c3c3084
https://doi.org/10.1109/ispsd.2014.6855994
https://doi.org/10.1109/ispsd.2014.6855994
Publikováno v:
2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).
We present a theoretical analysis of the formation of current filaments leading to the latch-up state that can occur during the turn-off process in a cell array of high-voltage (3.3 kV) trench insulated-gate bipolar transistors (trench IGBTs). Our in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e0ad2214c7ba7966b87759039cf2aa3b
https://doi.org/10.1109/sispad.2013.6650633
https://doi.org/10.1109/sispad.2013.6650633
Autor:
F. Pfirsch, Y.C. Gerstenmaier
Publikováno v:
Conference Record of the 1990 IEEE Industry Applications Society Annual Meeting.
The on-state current voltage characteristic of thyristors is investigated by numerical one-dimensional simulation. For sufficiently high p-base concentration, an abrupt increase in on-state voltage is observed above a critical current density. By dri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6f1e977ad543a03b84197add40d49bbd
https://doi.org/10.1109/ias.1990.152396
https://doi.org/10.1109/ias.1990.152396
Autor:
F. Pfirsch, M. Ruff
Publikováno v:
IEEE Transactions on Electron Devices. 40:2085-2087
A modification of the continuity equations for electrons and holes in materials with deep donors or acceptors is presented. The modification is necessary in order to prevent violation of charge conservation in transient simulations. The influence of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7e92028e0f048093df6742cbc0ad6ad9
https://doi.org/10.1109/16.239754
https://doi.org/10.1109/16.239754