Výsledky vyhledávání - "F. Pellizzer"

Single Event Effects in 90-nm Phase Change Memories

Autor: Simone Gerardin, Marta Bagatin, Veronique Ferlet-Cavrois, Alessandro Paccagnella, M. Bonanomi, F. Pellizzer, M. Vela, Angelo Visconti

Publikováno v: IEEE Transactions on Nuclear Science. 58:2755-2760

Single event effects are investigated in 90-nm phase change memories. The cells are shown to be insensitive to heavy-ion strikes and will likely remain so for a few more generations. Possible physical mechanisms leading to upsets in future generation

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::28e57ac58295661d7590191b4b268221
https://doi.org/10.1109/tns.2011.2171719

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Analysis of Proton and Heavy-Ion Irradiation Effects on Phase Change Memories With MOSFET and BJT Selectors

Autor: F. Ottogalli, F. Pellizzer, J.R. Schwank, Gyorgy Vizkelethy, A. Gasperin, Alessandro Paccagnella

Publikováno v: IEEE Transactions on Nuclear Science. 55:3189-3196

We study proton and heavy ion irradiation effects on phase change memories (PCM) with MOSFET and BJT selectors and the effect of the irradiation on the retention characteristics of these devices. Proton irradiation produces noticeable variations in t

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::351addf675d181b1b4f2fa6cc4bb5cd9
https://doi.org/10.1109/tns.2008.2007639

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Precise electrical evaluation of active oxides thickness and comparison with TEM measurements

Autor: F. Pellizzer, G. Pavia

Publikováno v: Journal of Non-Crystalline Solids. 280:235-240

In this paper we propose a new model to describe the quantum effects at the SiO2/Si interface of metal-oxide–semiconductor (MOS) devices. Using this model we developed a method to extract the thickness of thin oxides (in the range of 3–20 nm) fro

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6b4029f65c40893e2ddd3f38449fdf14
https://doi.org/10.1016/s0022-3093(00)00391-4

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Thin oxide reliability and gettering efficiency in advanced silicon substrates

Autor: B Padovani, M. L. Polignano, F. Cazzaniga, L Ceresara, F Pellizzer, Gabriella Ghidini, F. Illuzzi

Publikováno v: Materials Science and Engineering: B. 73:99-105

Various substrates are compared for both bulk defect formation and thin oxide reliability. Wafers were subjected to a complete device fabrication process, and the formation of the denuded zone was monitored by SPV measurements of carrier lifetime. Ox

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1ca5911d01de5bdccd8eab21d42fc2a4
https://doi.org/10.1016/s0921-5107(99)00443-2

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Influence of charge trapping on oxide scaling down

Autor: F. Pellizzer, Cesare Clementi, M. Alessandri, Gabriella Ghidini

Publikováno v: Microelectronics Reliability. 38:217-220

The aim of this work is the characterization, in terms of trapped charge and charge to breakdown, of the quality of an oxide with reduced thickness. A comparison between two evaluation methods, the widely used exponentially ramped current stress (ERC

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e9daf0eadf45740b546c25ef7d8f27f1
https://doi.org/10.1016/s0026-2714(97)00215-1

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Nitridation impact on thin oxide charge trapping

Autor: B. Crivelli, Cesare Clementi, F. Pellizzer, M. Alessandri, H. Ikegawa, M. Imai, Gabriella Ghidini, F. Martin

Publikováno v: Microelectronic Engineering. 36:211-214

Aim of this work is the electrical characterization of thin oxides obtained with different nitridation processes in either N 2 O or NO ambient performed in a furnace right after the steam oxidation. Oxide quality in term of charge to breakdown and ch

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b2bfc184e82037885bd2e874df311db9
https://doi.org/10.1016/s0167-9317(97)00050-6

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Electrical Characterization of Highly Reliable 8 nm Oxide

Autor: M. Alessandri, D. Drera, F. Pellizzer, C. Clementi, G. Ghidini

Publikováno v: Journal of The Electrochemical Society. 144:758-764

Device scaling down requires the decreasing of any thermal treatment in order to reduce dopant diffusion. The possibility of using steam oxides grown at low temperatures to substitute dry thermal oxides for tunnel application in flash memory is inves

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c139a449002e83674a34d2fdccd01588
https://doi.org/10.1149/1.1837481

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Reliability study of phase-change non-volatile memories

Autor: A. Pirovano, A. Redaelli, F. Pellizzer, F. Ottogalli, M. Tosi, D. Ielmini, A. L. Lacaita, R. Bez

Publikováno v: IEEE transactions on device and materials reliability 4 (2004): 422–427.
info:cnr-pdr/source/autori:A. Pirovano, A. Redaelli, F. Pellizzer, F. Ottogalli, M. Tosi, D. Ielmini, A. L. Lacaita and R. Bez/titolo:Reliability study of phase-change non-volatile memories/doi:/rivista:IEEE transactions on device and materials reliability/anno:2004/pagina_da:422/pagina_a:427/intervallo_pagine:422–427/volume:4

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::e0a843ef9ea55fd84e1634d319c367e2
http://hdl.handle.net/11311/556052

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