Zobrazeno 1 - 8
of 8
pro vyhledávání: '"F. P. Dabkowski"'
Publikováno v:
Microelectronic Engineering. :539-543
Confinement of electrons and holes is assumed to take place within the quantum well of a laser diode for all modes of operation of the diode. Photons are expected to be confined within the Fabry–Perot cavity with little spreading out of the resonat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::65de9e07c6c616b5c7ff06066f6fd8f9
https://doi.org/10.1016/s0167-9317(98)00216-0
https://doi.org/10.1016/s0167-9317(98)00216-0
Publikováno v:
Journal of Applied Physics. 67:1347-1351
Zinc was diffused into GaAs, Al0.38Ga0.62As, and GaAs0.6P0.4 using a 2000–3000‐A‐thick yttria‐stabilized cubic‐zirconia (YSZ) protection layer to produce planar p‐n junctions. The YSZ layer greatly reduced thermal decomposition of the sem
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::41abaaca40c8bd33cd4b5a58cb660fe8
https://doi.org/10.1063/1.345688
https://doi.org/10.1063/1.345688
Publikováno v:
Journal of Applied Physics. 80:6547-6549
The output facet temperature of high‐power AlGaAs/GaAs single quantum well (SQW) laser diodes was measured during operation. The front output facets were passivated with Al2O3 coatings. The spectral shift of photoluminescence from the cladding laye
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f4c80f1df169cc1ae118b927473ec019
https://doi.org/10.1063/1.363675
https://doi.org/10.1063/1.363675
Publikováno v:
Applied Physics Letters. 64:13-15
Measurements of the temperature distribution along the cavity of 0.5 W AlGaAs quantum well lasers are presented. The spatial distribution of temperature was determined by measuring the spectral shift of electroluminescence emitted through a window in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dcada57f8567159b4f6ee57ca4d17e9d
https://doi.org/10.1063/1.110901
https://doi.org/10.1063/1.110901
Autor:
M. Milshtein, C. H. Kang, Harry C. Gatos, F. P. Dabkowski, Marek Skowronski, A. M. Hennel, Jacek Lagowski
Publikováno v:
Journal of Applied Physics. 62:3791-3798
A systematic study of plastically deformed (in compression) GaAs was carried out employing deep‐level spectroscopies, optical absorption, and electronic transport measurements. Deformation‐induced changes in the free‐carrier concentration, the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b4e11f12deaf0a8b9c83a99282cc670
https://doi.org/10.1063/1.339218
https://doi.org/10.1063/1.339218
Publikováno v:
Journal of Crystal Growth. 72:595-598
A novel partially confined configuration is proposed for the crystal growth of semiconductors from the melt, including those with volatile constituents. A triangular prism is employed to contain the growth melt. Due to surface tension, the melt will
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::62788b53dbb0a206f0305e8b79afd82d
https://doi.org/10.1016/0022-0248(85)90210-6
https://doi.org/10.1016/0022-0248(85)90210-6
Publikováno v:
Applied Physics Letters. 47:607-609
We present the first positive identification of a vanadium‐related electron trap in V‐doped GaAs crystals grown by the liquid encapsulated Czochralski technique in pyrolytic boron nitride crucibles. Detailed deep level transient spectroscopy and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d4c991a6d0a9963146c1eeed21530285
https://doi.org/10.1063/1.96087
https://doi.org/10.1063/1.96087
Publikováno v:
Applied Physics Letters. 53:1729-1731
Diffusion of zinc into GaAs through an yttria‐stabilized cubic zirconia (YSZ) passivation layer has been demonstrated with an open‐tube diffusion method. Pure zinc or GaAs/Zn2As3 sources produced high quality planar p‐n junctions. The YSZ layer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ef04420e18c88e5e3653736d44600f8c
https://doi.org/10.1063/1.99808
https://doi.org/10.1063/1.99808