Zobrazeno 1 - 10
of 17
pro vyhledávání: '"F. Omarini"'
Autor:
Alessandro Veneroni, Giuseppe Pistone, F. Omarini, Giuseppe Abbondanza, Stefano Leone, Maurizio Masi, Marco Mauceri
Publikováno v:
Crystal Research and Technology. 40:972-975
The model adopted for the simulation of a new industrial size type of horizontal cold wall reactor for epitaxial silicon carbide deposition is reviewed. The attention is focalized on the chemical mechanism adopted and on the comparison with some grow
Publikováno v:
Crystal Research and Technology. 40:967-971
A detailed chemical mechanism for the silicon carbide epitaxial growth using chlorinated precursors is presented here. The mechanism involves 155 gas phase and 66 surface reactions among 47 gas phase and 9 surface species, respectively. A comparison
Autor:
F. Omarini, Giuseppe Pistone, Giuseppe Abbondanza, Maurizio Masi, Stefano Leone, Marco Mauceri, Alessandro Veneroni
Publikováno v:
Materials Science Forum. :57-60
The present production processes for epitaxial SiC do not allow the matching of productivity with the material quality requested by the microelectronics market. Here, to respond to such a demand, a combined experimental and multi-scale – multi-hier
Autor:
Davide Moscatelli, Stefano Leone, Alessandro Veneroni, Maurizio Masi, Giuseppe Pistone, Giuseppe Abbondanza, Marco Mauceri, F. Omarini
The availability of reliable chemical kinetics data is still a key factor in designing epitaxial deposition reactors able to obtain electronic grade surface quality for SiC films. Here, a literature mechanism was considered for the gas phase while a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2bf047f551460ef8a6fbd4ecfa2c7075
http://hdl.handle.net/11311/554949
http://hdl.handle.net/11311/554949
Autor:
Giuseppe Abbondanza, Marco Mauceri, F. Omarini, Fabrizio Roccaforte, R. Reitano, Giuseppe Pistone, G. Giannazzo, Maurizio Masi, Danilo Crippa, Gaetano Foti, L. Zamolo, Alfonso Ruggiero, G. Abbagnale, Lorenzo Neri, Salvatore Di Franco, Francesco La Via, Stefano Leone, Lucia Calcagno, Alessandro Veneroni, Gian Luca Valente
Publikováno v:
Scopus-Elsevier
Materials science forum 483 (2005): 67–71.
info:cnr-pdr/source/autori:Crippa D., Valente G.L., Ruggiero A., Neri L., Reitano R., Calcagno L., Foti G., Mauceri M., Leone S., Pistone G., Abbondanza G., Abbagnale G., Veneroni A., Omarini F., Zamolo L., Masi M., Roccaforte F., Giannazzo F., Di Franco S., La Via F./titolo:New achievements on CVD based methods for SIC epitaxial growth/doi:/rivista:Materials science forum/anno:2005/pagina_da:67/pagina_a:71/intervallo_pagine:67–71/volume:483
ResearcherID
Materials science forum 483 (2005): 67–71.
info:cnr-pdr/source/autori:Crippa D., Valente G.L., Ruggiero A., Neri L., Reitano R., Calcagno L., Foti G., Mauceri M., Leone S., Pistone G., Abbondanza G., Abbagnale G., Veneroni A., Omarini F., Zamolo L., Masi M., Roccaforte F., Giannazzo F., Di Franco S., La Via F./titolo:New achievements on CVD based methods for SIC epitaxial growth/doi:/rivista:Materials science forum/anno:2005/pagina_da:67/pagina_a:71/intervallo_pagine:67–71/volume:483
ResearcherID
The results of a new epitaxial process using an industrial 6x2” wafer reactor with the introduction of HCl during the growth have been reported. A complete reduction of silicon nucleation in the gas phase has been observed even for high silicon dil
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::60e2fd6f09ba00d8cc8ad4af8eda9faf
http://www.scopus.com/inward/record.url?eid=2-s2.0-33750297938&partnerID=MN8TOARS
http://www.scopus.com/inward/record.url?eid=2-s2.0-33750297938&partnerID=MN8TOARS
Autor:
Alfonso Ruggiero, Gian Luca Valente, Maurizio Masi, F. Omarini, Filippo Giannazzo, Danilo Crippa, G. Abbagnale, Alessandro Veneroni, Lucia Calcagno, Giuseppe Pistone, Marco Mauceri, S. Di Franco, G. Galvagno, R. Reitano, Giuseppe Abbondanza, Stefano Leone, Fabrizio Roccaforte, L. Zamolo, Gaetano Foti, F. Portuese, F. La Via
Publikováno v:
Università degli Studi di Catania-IRIS
Microelectronic engineering 83 (2006): 48–50.
info:cnr-pdr/source/autori:La Via F, Galvagno G, Roccaforte F, Giannazzo F, Di Franco S, Ruggiero A, Reitano R, Calcagno L, Foti G, Mauceri M, Leone S, Pistone G, Portuese F, Abbondanza G, Abbagnale G, Veneroni A, Omarini F, Zamolo L, Masi M, Valente GL, Crippa D/titolo:High growth rate process in a SiC horizontal CVD reactor using HCl/doi:/rivista:Microelectronic engineering/anno:2006/pagina_da:48/pagina_a:50/intervallo_pagine:48–50/volume:83
Microelectronic engineering 83 (2006): 48–50.
info:cnr-pdr/source/autori:La Via F, Galvagno G, Roccaforte F, Giannazzo F, Di Franco S, Ruggiero A, Reitano R, Calcagno L, Foti G, Mauceri M, Leone S, Pistone G, Portuese F, Abbondanza G, Abbagnale G, Veneroni A, Omarini F, Zamolo L, Masi M, Valente GL, Crippa D/titolo:High growth rate process in a SiC horizontal CVD reactor using HCl/doi:/rivista:Microelectronic engineering/anno:2006/pagina_da:48/pagina_a:50/intervallo_pagine:48–50/volume:83
The results of a new epitaxial process using an industrial 6x2'' wafer reactor with the introduction of HCl during the growth have been reported. A complete reduction of silicon nucleation in the gas phase has been observed even for high silicon dilu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::dd505ce89996d934934c26570ed355b0
https://www.iris.unict.it/handle/20.500.11769/38516
https://www.iris.unict.it/handle/20.500.11769/38516
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Autor:
A. Veneroni, F. Omarini
Publikováno v:
Crystal Research & Technology; Nov2005, Vol. 40 Issue 10/11, p967-971, 0p
Publikováno v:
Crystal Research & Technology; Nov2005, Vol. 40 Issue 10/11, p972-975, 0p
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.