Zobrazeno 1 - 10
of 15
pro vyhledávání: '"F. O. Fong"'
Publikováno v:
Journal of Microelectromechanical Systems. 17:735-740
Ion beam proximity lithography (IBL) is a technique where a broad beam of energetic light ions floods a stencil mask and transmitted beamlets transfer the mask pattern to resist on a substrate. With a depth-of-field up to 20000 times larger than the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2b9dd8d581d1d0f509dcfeb495fe7494
https://doi.org/10.1109/jmems.2008.921730
https://doi.org/10.1109/jmems.2008.921730
Autor:
S. Sen, David P. Stumbo, F. O. Fong, John C. Wolfe, Hans Loeschne, Alex R. Shimkunas, D. W. Engler, John N. Randall, George A. Damm, Phillip E. Mauger
Publikováno v:
SPIE Proceedings.
This paper describes recent developments in three areas ofmasked ion beam lithography (MIBL). These are 1) fabrication oflarge area, low distortion, silicon stencilmasks for demagnifying ion projection lithography, 2) fabrication ofstencil masks with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::de8fcb81631f188fdb77dd297cc514c5
https://doi.org/10.1117/12.20143
https://doi.org/10.1117/12.20143
Autor:
S. Sen, Frederick Cho, K. F. Fong, D. P. Stumbo, John C. Wolfe, F. O. Fong, G. A. Damm, D. W. Engler
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 9:2879
The electrodes of surface acoustic wave (SAW) devices cannot be represented in a stencil mask as cantilevered beams because the high aspect ratio makes them unstable. Therefore a complementary exposure technique has been developed. The mask pattern i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a63f57785299da0ab3848dc578ed1de9
https://doi.org/10.1116/1.585617
https://doi.org/10.1116/1.585617
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 9:3597
We measure the fluorescent alignment generated by ion bombardment of an SiO2 wafer mark scanned behind a corresponding window pattern in a silicon stencil mask. We conclude that an optimized system can align to 50 nm (mean+3σ) in less than 300 ms. T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a67dbf1b1585612bde2bb86b4717402a
https://doi.org/10.1116/1.585852
https://doi.org/10.1116/1.585852
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 8:1941
We have fabricated a gate‐level stencil mask for GaAs field effect transistors with 1000 gates and 1‐cm2 silicon foil area. Stress relief distortion was not significant relative to the measurement error of 25 nm(1σ). The results suggest that the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e5a7f2227ac5b21eac601d470bb4c8dc
https://doi.org/10.1116/1.584879
https://doi.org/10.1116/1.584879
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 8:2008
We show that the bombardment of densified chemical vapor deposited SiO2 by hydrogen ions induces fluorescent defects. A proton dose of 6×1014 /cm2 saturates the fluorescence yield at approximately 0.6 photons/100 keV of absorbed proton energy. A bea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b8369ba6e6f78fbc644810f8404bba6c
https://doi.org/10.1116/1.584892
https://doi.org/10.1116/1.584892
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 2:389-392
It has recently been shown that the stress of many refractory thin films deposited by dc‐magnetron sputtering can be influenced by the sputtering pressure. Usually the transition from compressive to tensile stress is too sharp for pressure to be a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::69f4da2884bfae9bd6a8bf79cf78fc4b
https://doi.org/10.1116/1.572749
https://doi.org/10.1116/1.572749
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 6:375
Preliminary studies of the use of plasma deposited styrene as a negative electron‐beam resist for lithography in V grooves are reported. We show that reactor pressure and power strongly affect the exposure and mechanical properties of the resist. C
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a4dfa6f368924b898cad0082ff17ea94
https://doi.org/10.1116/1.584002
https://doi.org/10.1116/1.584002
Autor:
Philip E. Mauger, F. O. Fong, Alex R. Shimkunas, Junling J. Yen, John C. Wolfe, S. Sen, John N. Randall, Hans Loschner
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 7:1802
This paper describes the fabrication of stencil masks in large area, low‐stress (10 MPa), n‐type silicon membranes for demagnifying (4×) ion projection lithography (IPL) and proximity printing. The projection masks have a silicon foil area 95 mm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7ec3e0d16a9dca61ae1ce241be5533c6
https://doi.org/10.1116/1.584461
https://doi.org/10.1116/1.584461
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 6:257
Reactive ion etching of single‐crystal and polycrystalline silicon in bromine has been studied at 2‐mTorr pressure in a magnetically enhanced reactor. Effective voltage thresholds for silicon and thermal SiO2 etching are observed at −50‐ and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a4783908211de22c07da574b7e88ef8c
https://doi.org/10.1116/1.584018
https://doi.org/10.1116/1.584018