Independent double-gate FinFETs with asymmetric gate stacks

Autor: Malgorzata Jurczak, M. Masahara, F. Neuilly, Liesbeth Witters, Serge Biesemans, E. Suzuki, Christa Vrancken, R. Surdeanu, Katia Devriendt, V.H. Nguyen, G. Van den bosch, Eddy Kunnen, G. Doornbos

Publikováno v: Microelectronic Engineering. 84:2097-2100

Flexibly controllable threshold voltage (V"t"h) asymmetric gate oxide thickness (T"o"x) independent double-gate (DG) FinFETs (4T-FinFETs) have been demonstrated. Thin drive-gate oxide (HfO"2 or SiON or SiO"2) and slightly thick V"t"h-control-gate oxi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::abc10484f53a634250135d32668b96a2
https://doi.org/10.1016/j.mee.2007.04.033

Low voltage and low power embedded 2T-SONOS flash memories improved by using P-type devices and high-K materials

Autor: R. van Schaijk, Robert Beurze, P.G. Tello, Michiel Slotboom, A.H. Miranda, D. Dormans, W. Baks, M.J. van Duuren, F. Neuilly, N. Akil

Publikováno v: Solid-State Electronics. 49:1849-1856

16 Mb 2-transistor (2T)-SONOS flash memories have been processed in a 0.18 μm CMOS technology. The 2T NOR architecture allows fast random access and low power program and erase by tunneling. Also, negative erased threshold voltages enable low voltag

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d6f45c63a18648757e5a6cffdc671685
https://doi.org/10.1016/j.sse.2005.10.017

Fabrication of 24-MHz-disk resonators with silicon passive integration technology

Autor: Lionel Buchaillot, Bernard Legrand, F. Neuilly, P. Philippe, A. Summanwar, M. Sworowski

Publikováno v: IEEE Electron Device Letters
IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers, 2010, 31, pp.23-25. ⟨10.1109/LED.2009.2034542⟩
IEEE Electron Device Letters, 2010, 31, pp.23-25. ⟨10.1109/LED.2009.2034542⟩

A new approach for the fabrication of large contour-mode single-crystal silicon resonators has been demonstrated without the use of SOI substrates. Twenty-four-megahertz disk resonators have been built thanks to industrial facilities dedicated to the

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4356f9a4f6ffd04ddeaed33f3865f1b6
https://hal.archives-ouvertes.fr/hal-00548984

BiCMOS technology improvements for microwave application

Autor: Angel Rodríguez, T. Nesheiwat, N. Zhang, F. Neuilly, Francis Zaato, E. Hijzen, J. Melai, HongJiang Sun, W.D. van Noort

Publikováno v: Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting, 2008 (BCTM 2008)., 93-96
STARTPAGE=93;ENDPAGE=96;TITLE=Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting, 2008 (BCTM 2008).

The third generation of NXP 0.25 mum SiGe BiCMOS technology (QUBiC4Xi) is presented. The NPN has fT/fmax of 216/177 GHz and BVcb0 of 5.2 V. The high-voltage NPN has 12 V BVcb0, and fT/fmax of 80/162 GHz. This is complemented with an improved MIM capa

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::86430482946b9573c17526c7f37ea762
https://doi.org/10.1109/bipol.2008.4662720

Local buried oxide technology for HV transistors integrated in CMOS

Autor: F. Neuilly, P. Meunier-Beillard, E. Saarnilehto, Jan Sonsky

Publikováno v: Proceedings of the 19th International Symposium on Power Semiconductor Devices and IC's.

Automotive applications require full dielectric isolation of the high voltage and analog components. Such isolation is typically realized by BCD technologies built on SOI. The drawbacks of using SOI wafers, i.e. deviation from the baseline bulk CMOS

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4ab1ecfb7cd60bd6ef51e7fceccb7678
https://doi.org/10.1109/ispsd.2007.4294937