Zobrazeno 1 - 10
of 60
pro vyhledávání: '"F. Neppl"'
Autor:
A.W. Wieder, F. Neppl
Publikováno v:
IEEE Micro. 12:10-19
CMOS has become the mainstream IC technology. Extending well into the sub-0.1- mu m regime, its potential provides enormous chip complexities for integration of complete systems on one chip. A number of general trends in the development and manufactu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3905d1b306d7d9bb123e4a8feea6e480
https://doi.org/10.1109/40.149732
https://doi.org/10.1109/40.149732
Publikováno v:
Microelectronic Engineering. 13:473-476
A lateral etching technique is presented that allows the reproducible realization of 0.2 μm lines with a standard 1.0 μm g-line stepper lithography. The lateral etching was applied to the submicron device development. MOSFETs with quarter-micron ga
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5c1d14c67e1371c1eb3fcca29885498b
https://doi.org/10.1016/0167-9317(91)90136-2
https://doi.org/10.1016/0167-9317(91)90136-2
Publikováno v:
Proceedings of the IEEE International Conference on Microelectronic Test Structures.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f148686d83578549f407187de22bbb05
https://doi.org/10.1109/icmts.1988.672929
https://doi.org/10.1109/icmts.1988.672929
Publikováno v:
Technical Digest., International Electron Devices Meeting.
For more realistic lifetime predictions of CMOS technology a stress test was developed that yields the relevant transistor degradation under dynamic stress and simultaneously the impact of transistor degradation on circuit speed performance. Thus unc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6f40cb2174aa45eb22061281a1774dce
https://doi.org/10.1109/iedm.1988.32791
https://doi.org/10.1109/iedm.1988.32791
Autor:
F. Neppl
Publikováno v:
e & i Elektrotechnik und Informationstechnik. 114:464-465
Mikroelektronik in Form von ICs ist im Alltag allgegenwartig: Taschenrechner, Chipkarten fur Zahlungsverkehr oder als Datentrager, Maschinensteuerungen, Telekommunikationssysteme mit diversen Diensten usw. ICs tragen auf vielfaltige Weise zu Arbeitse
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d6f2890b3d6cad6d62f013ce2d07a734
https://doi.org/10.1007/bf03157817
https://doi.org/10.1007/bf03157817
Autor:
Gilbert Declerck, F. Neppl, G. Janssen, Wilfried Vandervorst, A. Montree, C. Hill, H. Ryssel, A. van Ommen, J. Lorenz, M. Rudan, M. Haond, P. Felix, P. Patruno, R. DeKeersmaecker, Herman Maes, L. Van den hove
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 12:2852
The ADEQUAT project [Advanced Developments for Quarter Micron complementary metal–oxide–semiconductor (CMOS) Technologies] is executed by a European consortium under the JESSI/ESPRIT programs. It aims at developing new device structures and proce
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eaa2d4135ca7d1bbcac062434d8ccbed
https://doi.org/10.1116/1.587204
https://doi.org/10.1116/1.587204
Autor:
Konrad Hieber, F. Neppl
Publikováno v:
Thin Solid Films. 140:131-136
The possibility of depositing TaSi 2 by sputtering and chemical vapour deposition (selective and non-selective deposition) opens a wide variety of applications for this material in very-large-scale integration technology. The following examples are b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b2c6286389acbb8e93162ca396c4930e
https://doi.org/10.1016/0040-6090(86)90167-7
https://doi.org/10.1016/0040-6090(86)90167-7
Publikováno v:
Le Journal de Physique Colloques. 49:C4-405
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7af1ac4488e371ae8bf013c5d32da781
https://doi.org/10.1051/jphyscol:1988485
https://doi.org/10.1051/jphyscol:1988485
Autor:
U. Schwabe, F. Neppl
Publikováno v:
IEEE Journal of Solid-State Circuits. 17:138-141
Results on the electrical resistivity, the stress, and the etching behavior of TaSi/sub 2/ films evaporated under various residual gas conditions, and the correlations to changes in the crystalline structure as determined by X-ray diffractometer meas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cd46ee890df59b436890e81a2322a8bc
https://doi.org/10.1109/jssc.1982.1051706
https://doi.org/10.1109/jssc.1982.1051706
Autor:
F. Neppl, U. Schwabe
Publikováno v:
IEEE Transactions on Electron Devices. 29:508-511
Results on the electrical resistivity, the stress, and the etching behavior of TaSi 2 films evaporated under various residual gas conditions, and the correlations to changes in the crystalline structure as determined by X-ray diffractometer measureme
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::10254626bd82ebdb19a6ba945af14c92
https://doi.org/10.1109/t-ed.1982.20734
https://doi.org/10.1109/t-ed.1982.20734