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pro vyhledávání: '"F. Morier-Genoud"'
Akademický článek
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Autor:
Anatoly Pavlyuk, A. E. Troshin, F. Morier-Genoud, F. Brunner, Viktor Kisel, Ursula Keller, V. G. Shcherbitskii, N. V. Kuleshov, Ruediger Paschotta
Publikováno v:
Quantum Electronics. 36:319-323
The luminescence decay times are measured taking into account reabsorption for KY(WO4)2:Yb(KYW:Yb) crystals with atomic concentrations of active ions from 0.2% to 30%. The radiative lifetime of Yb3+ ions was measured to be 233 μs. The cw output powe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::06914f6c11a71f8bbe6f02c5b97b5033
https://doi.org/10.1070/qe2006v036n04abeh013143
https://doi.org/10.1070/qe2006v036n04abeh013143
Publikováno v:
Physical Review B - Condensed Matter and Materials Physics.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=erc_________::0c515a605f7e2064bf48e78a6e6870a8
Publikováno v:
Materials Science and Engineering: B. 66:151-156
Multiple quantum well (MQW) p-i-n heterostructures are a new alternative to increase the quantum efficiency of solar cell devices. In such structures, the QW carrier capture, carrier escape and radiative recombinations are the phenomena governing the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bc9a324d966f29a21f73ee84e7e4deff
https://doi.org/10.1016/s0921-5107(99)00095-1
https://doi.org/10.1016/s0921-5107(99)00095-1
Publikováno v:
Physical Review B. 60:2101-2105
A near-field pump-probe system with nanometer-scale spatial and femtosecond temporal resolution allows us to measure complex spatiotemporal carrier diffusion dynamics in semiconductor nanostructures. Single ${\mathrm{G}\mathrm{a}\mathrm{A}\mathrm{s}/
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::78f3e1c53768c7cfa88cb84b8f4cd962
https://doi.org/10.1103/physrevb.60.2101
https://doi.org/10.1103/physrevb.60.2101
Publikováno v:
Physical Review B. 59:14860-14863
We have studied the coherent emission from bulk semiconductors by spectrally resolved and spectrally integrated four-wave mixing (FWM) with broadband 16-fs pulses in the carrier density range from $1\ifmmode\times\else\texttimes\fi{}{10}^{16}{\mathrm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e8477c2980f4005be2704be6379c7c3a
https://doi.org/10.1103/physrevb.59.14860
https://doi.org/10.1103/physrevb.59.14860
Autor:
M. Pfister, Santos F. Alvarado, M. B. Johnson, F. K. Reinhart, H.W.M. Salemink, U. Marti, F. Morier-Genoud, Denis Martin
Publikováno v:
Applied Surface Science. :516-521
Investigating the ternary InxGa1−xAs alloy (x ∼ 12%) by cross-sectional scanning tunneling microscopy, we find that on the UHV-cleaved (110) surface the In distribution in both the surface and the first subsurface layer can be atomically resolved
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::adf88a62ce839364b5ed0b7148325f7c
https://doi.org/10.1016/s0169-4332(96)00196-1
https://doi.org/10.1016/s0169-4332(96)00196-1
Autor:
P. A. Baudat, F. Gozzo, F. Morier‐Genoud, David Martin, M. L. Languell, M. Iilegems, Prasad L. Polavarapu, E. Tuncel, Alan V. Barnes, C. Dupuy, Norman Tolk, Giorgio Margaritondo, Carlo Coluzza, Xue Yang, J.L. Davidson, G. C. Chen, J. F. Smith, A. Rudra, J. T. McKinley, A. Ueda, R. G. Albridge
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 12:2323-2326
The broad tunability (1–10 μm) and megawatt regime peak intensity available from the Vanderbilt Free‐Electron Laser is opening new avenues in semiconductor research. Initial experiments in nonlinear optical absorption and heterojunction band‐e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d3ea3d07f4fa809420a7d88461b43a66
https://doi.org/10.1116/1.579207
https://doi.org/10.1116/1.579207
Autor:
Jean-Marc Bonard, G. Oelgart, F. Morier-Genoud, Daniel Araujo, Jean-Daniel Ganière, F. K. Reinhart
Publikováno v:
Materials Science and Engineering: B. 24:124-129
The cathodoluminescence mode of the scanning electron microscope is used for the first time to investigate the lateral dependence of the electron-hole pair generation by the electron beam of the scanning electron microscope m semiconducting material.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::56297d40e30dd77b6afb2a8725d0d689
https://doi.org/10.1016/0921-5107(94)90312-3
https://doi.org/10.1016/0921-5107(94)90312-3
Autor:
C. Coluzza, Giorgio Margaritondo, J. T. McKinley, M. L. Languell, C. Dupuy, A. Ueda, Prasad L. Polavarapu, Alan V. Barnes, A. Rudra, Royal G. Albridge, E. Tuncel, Norman Tolk, Denis Martin, J. F. Smith, F. Gozzo, P. A. Baudat, F. Morier‐Genoud, M. Illegems, J.L. Davidson, Xue Yang, G. C. Chen
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 341:156-161
During the past year, the broad tunability (1-10 mum) and megawatt peak intensity made available by the Vanderbilt Free-Electron Laser opened new and productive avenues to semiconductor research. This paper overviews three of these experimental areas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::acdd51990141edb8f5cb479bd24cd7fc
https://doi.org/10.1016/0168-9002(94)90338-7
https://doi.org/10.1016/0168-9002(94)90338-7