Zobrazeno 1 - 10
of 29
pro vyhledávání: '"F. Malengreau"'
Publikováno v:
Scopus-Elsevier
Physical Review B, 59(8), 5832-5836. AMER PHYSICAL SOC
Physical Review B, 59(8), 5832-5836. AMER PHYSICAL SOC
We report evidence for surface plasmon excitations in concentric-shell fullerenes. A film of these concentric-shell fullerenes with radii around 5–7 nm was produced by carbon bombardment of a silver polycrystalline target and measured by electron-e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9ed6314aba6eb1110f7446a9a6af8c75
https://research.rug.nl/en/publications/1f7108c2-1707-4d27-9c3c-a3f33c25320b
https://research.rug.nl/en/publications/1f7108c2-1707-4d27-9c3c-a3f33c25320b
Autor:
Robert Sporken, S. Sivananthan, Jacques Ghijsen, T. van Gemmeren, Jean-Pierre Faurie, Roland Caudano, F. Malengreau, Robert L. Johnson
Publikováno v:
Scopus-Elsevier
University of Namur
University of Namur
Growth of CdTe(111)B on Si(100) by molecular beam epitaxy (MBE) was studied with photoelectron spectroscopy using synchrotron radiation. First, a monolayer of Te forms on top of the Si(100) substrate. We suggest that these Te atoms replace the Si dim
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ed68af988e5d880eea05b46fee9bc197
https://doi.org/10.1016/s0169-4332(97)00486-8
https://doi.org/10.1016/s0169-4332(97)00486-8
Publikováno v:
University of Namur
The growth of large-size single crystals of aluminium nitride has been obtained by UHV reactive rf-sputtering at high temperature (1050 °C). The growth mode was studied in situ by electron spectroscopy (HREELS, LEED) and by ex-situ High Resolution T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8cd18873745971d8ae4a765f71806b98
https://doi.org/10.1016/s0955-2219(97)00073-3
https://doi.org/10.1016/s0955-2219(97)00073-3
Publikováno v:
University of Namur
We present the epitaxial growth by rf reactive sputtering of aluminum nitride on Si(111) at high temperature. The grain size of the obtained films was sufficient to obtain a good low energy electron diffraction (LEED) pattern from which we determined
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::48b0dcdd76a93a5ecce7245f66b9308f
https://doi.org/10.1557/jmr.1997.0024
https://doi.org/10.1557/jmr.1997.0024
Publikováno v:
University of Namur
The growth by RF reactive sputtering of aluminium nitride (AlN) at the surface of oxidised iron was studied by X-ray photoelectron spectroscopy (XPS). The observation of the substrate lines showed that the top layer of the iron oxide, constituted of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2d85669c01c1156db8f4f185bd628986
https://doi.org/10.1016/0039-6028(95)00349-5
https://doi.org/10.1016/0039-6028(95)00349-5
Publikováno v:
Surface and Interface Analysis. 22:193-196
We have studied by Auger electron spectroscopy (AES) and electron energy loss spectroscopy (EELS) the room temperature growth of aluminium nitride (AlN) at the surface of clean and oxidized polycrystalline iron. The films were deposited by reactive r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::084b0b7769d908c492a6ce1df41f5253
https://doi.org/10.1002/sia.740220143
https://doi.org/10.1002/sia.740220143
Publikováno v:
Surface Science. 310:347-358
The growth of aluminium nitride (AlN) thin films on clean and oxidised polycrystalline iron was studied by Auger electron spectroscopy. The films of AlN were deposited by reactive RF sputtering (argon + nitrogen atmosphere). On clean iron, a modelisa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1f198b4cf35b40c06d8e2c1c8f1b0355
https://doi.org/10.1016/0039-6028(94)91398-6
https://doi.org/10.1016/0039-6028(94)91398-6
Publikováno v:
Ceramic Microstructures ISBN: 9781461374626
In the last 10 years, the III-nitride semiconductors (A1N, GaN, InN and ternary compounds) have revealed promising physical and optical properties. Potential applications include blue light emitting diodes and ultraviolet (UV) detectors, as well as h
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b4e488a66e51cae448a0850ac592fafd
https://doi.org/10.1007/978-1-4615-5393-9_16
https://doi.org/10.1007/978-1-4615-5393-9_16
Autor:
B. Canava, Jacques Vedel, Daniel Lincot, Jean-François Guillemoles, F. Malengreau, H. Ardelean
Publikováno v:
Scopus-Elsevier
The control of the barrier height at the Cu(In,Ga)Se2(CIGS)/CdS interface, via the chemical state of the CIGS surface, is a key to improve solar cell performances. In this paper chemical modifications have been achieved by the electrochemical method,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f1e6aab4123425e8c18388bf74dcabf2
https://doi.org/10.1557/proc-485-133
https://doi.org/10.1557/proc-485-133
Autor:
E. Calleja, Roland Caudano, F. J. Sánchez, F. Malengreau, Bernard Beaumont, Robert Sporken, E. Muñoz, Christophe Silien, K. Grigorov, Pierre Gibart
Publikováno v:
University of Namur
Scopus-Elsevier
Scopus-Elsevier
Au/GaN and Pt/GaN contacts have been studied with XPS. According to XPS depth profiling, the N signal is weak in the region below the metal contact and the Pt or Au signal decreases much more slowly than expected for a sharp interface. Next, we have
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e8d4b25478b6dd77346d8348a73b5dc2
https://doi.org/10.1557/s1092578300001496
https://doi.org/10.1557/s1092578300001496