Zobrazeno 1 - 10
of 79
pro vyhledávání: '"F. Magistrali"'
Autor:
Elisa Albini, Sonia N. Coccitto, Marzia Cinthi, Eleonora Giovanetti, Marco Gobbi, Francesca R. Massacci, Silvia Pavone, Chiara F. Magistrali, Andrea Brenciani
Publikováno v:
Journal of Global Antimicrobial Resistance, Vol 32, Iss , Pp 48-49 (2023)
Externí odkaz:
https://doaj.org/article/6be9429a62b740bba61041c5c174ced5
Autor:
Elisa Albini, Sonia N. Coccitto, Marzia Cinthi, Eleonora Giovanetti, Marco Gobbi, Francesca R. Massacci, Silvia Pavone, Chiara F. Magistrali, Andrea Brenciani
Publikováno v:
Journal of global antimicrobial resistance.
Autor:
Carmen Maresca, Eleonora Scoccia, C. F. Magistrali, A. Luppi, P. Bonilauri, L. Cucco, Francesca Romana Massacci, G. Merialdi
Publikováno v:
International Conference on the Epidemiology and Control of Biological, Chemical and Physical Hazards in Pigs and Pork.
Autor:
G. Salmini, R. De Palo, F. Magistrali, Maria Benedetta Casu, Massimo Vanzi, Annalisa Bonfiglio
Publikováno v:
Microelectronics Reliability. 38:1215-1220
The basic theory for Recombination Enhanced Defect Reaction (REDR) as responsible for sudden failures in 980 nm SL SQW InGaAs pump laser diodes is here tested on experimental constant-current life-test data. A link between the occurrence of long term
Publikováno v:
Microelectronics Reliability. 38:767-771
A different reading of the available I–V curves is proposed for laser diodes whose characteristics display some degradation. In particular, the usual monitoring of the optical power P and of the threshold current Ith is complemented by the inspecti
Publikováno v:
Microelectronics Reliability. 38:497-506
Failure mechanisms due to metallurgical interactions have been investigated in commercially available AlGaAs/GaAs HEMTs and AlGaAs/InGaAs pseudomorphic HEMTs (PM-HEMTs) by means of accelerated tests at high temperature, with and without applied bias.
Publikováno v:
Microelectronics Reliability. 37:1667-1670
A three dimensional analysis on stress and strain in the central and in the mirror area of a InGaAsGaAs ridge laser diode structure is presented. The analysis is based on a finite element method model, which couples thermal behaviour of laser to i
Autor:
Francesco Dentali, F. Magistrali, M. Mangini, A. Togna, Alessandro Squizzato, Walter Ageno, C. Fugazzola
Publikováno v:
Journal of thrombosis and haemostasis : JTH. 10(1)
Publikováno v:
Scopus-Elsevier
The sensitivity of InGaAsP/InP buried crescent lasers to ESD phenomena was deeply analysed, starting from the need to explain and prevent sudden failures during equipment manufacturing and test. Failure analysis allowed us to localize the degradation
Autor:
Marta Paniccià, Lucilla Cucco, M. Tentellini, C. Maresca, C. F. Magistrali, N. D'Avino, F. Ciuti, Eleonora Scoccia, Giovanni Pezzotti
Publikováno v:
International Conference on the Epidemiology and Control of Biological, Chemical and Physical Hazards in Pigs and Pork.