Zobrazeno 1 - 10
of 14
pro vyhledávání: '"F. M. Abou El‐Ela"'
Publikováno v:
Advanced Studies in Theoretical Physics. 7:299-308
We present a study on the effect of the spin‐orbit interaction on the electronic structure, magnetic moment and spin density maps in the (110) crystal plane for Co 2YSn (Y = Ti, V and Mn) compounds. Our calculations are performed using a self-consi
Autor:
A. Z. Mohamed, F. M. Abou El-Ela
Publikováno v:
Advances in Applied Physics. 1:71-82
Dynamic screened scattering rate of polar optical p honons has been calculated for electrons in the central valley of GaN at moderate carrier concentrations around 3 24 10 2 m x . Our calculations used the Lindhard formalism wit h FermiDirac distribu
Autor:
B M El-Assy, F. M. Abou El-Ela
Publikováno v:
Pramana. 79:125-136
Using ensemble Monte Carlo simulation technique, we have calculated the transport properties of InN such as the drift velocity, the drift mobility, the average electron, energy relaxation times and momentum relaxation times at high electric field. Th
Publikováno v:
Modern Physics Letters B. 25:1713-1724
The optical polaron confined to quantum well with tunable dimensions is investigated within the framework of a variational technique intending to give a unified characterization of problem for all the coupling strengths. The ground state energy and t
Autor:
F. M. Abou El-Ela, A. Z. Mohamed
Publikováno v:
Journal of Modern Physics. :1324-1330
Temperature and doping dependencies of the transport properties have been calculated using an ensemble Monte Carlo simulation. We consider the polar optical phonon, acoustic phonons, piezoelectric, intervalley scatterings and Charged impurity scatter
Autor:
F. M. Abou El-Ela
Publikováno v:
Pramana. 63:1089-1097
Fit of the experimental data of ZnS : Mn by a modified lucky-drift formula has been performed using the least square algorithm. The fit agrees well with the experimental data only at high field. The best fitting parameters at high field are the mean
Autor:
A. Z. Mohamed, F. M. Abou El-Ela
Publikováno v:
Applied Physics Research. 5
Monte Carlo simulations of hot electron transport in n-type GaN when the interaction of the electrons with polar optical phonons is dynamically screened shows the effects of antiscreening at carrier densities of (1-5)x1024 m-3. At these densities ful
Autor:
A. Z. Mohamed, F. M. Abou El-Ela
Publikováno v:
ISRN Condensed Matter Physics.
A three-valley Monte Carlo simulation approach was used to investigate electron transport in wurtzite GaN such as the drift velocity, the drift mobility, the average electron energy, energy relaxation time, and momentum relaxation time at high electr
Autor:
F. M. Abou El‐Ela, N. T. Mokhtar
Publikováno v:
AIP Conference Proceedings.
Monte Carlo simulation of electron transport in Ga0.53In0.47 As has been performed for three valley conduction band model. Scattering Sources include polar optical phonons, non‐polar intervalley phonons, non‐polar acoustic phonons, charged impuri
Autor:
F. M. Abou El‐Ela
Publikováno v:
AIP Conference Proceedings.
Ionization waves, analogous to positive column of gaseous plasma, are shown to occur in ZnS. This is demonstrated with a model in which a single type of carrier (electron) impact ionizes a deep level trap in ZnS. The no‐local nature of impact ioniz