Zobrazeno 1 - 10
of 250
pro vyhledávání: '"F. Luckert"'
Autor:
Anthony J. Kent, C. T. Foxon, Paul R. Edwards, Sergei V. Novikov, F. Luckert, Robert W. Martin, C.R. Staddon
Publikováno v:
Journal of Crystal Growth. 350(1):80-84
There is a significant difference in the lattice parameters of GaN and AlN and for many device applications AlxGa1-xN substrates would be preferable to either GaN or AlN. We have studied the growth of free-standing zinc-blende and wurtzite AlxGa1-xN
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::17275fb7253804274cd0bdb7b188af11
Autor:
Jonathan D. Denlinger, Junqiao Wu, Paul R. Edwards, Kin Man Yu, Zuzanna Liliental-Weber, Anthony J. Kent, R. dos Reis, F. Luckert, C. T. Foxon, Sergei V. Novikov, Wladek Walukiewicz, Oscar D. Dubon, A.X. Levander, A. Tseng, Robert W. Martin
Publikováno v:
physica status solidi (a). 209:419-423
We have analysed bismuth incorporation into GaN layers using plasma-assisted molecular beam epitaxy (PA-MBE) at extremely low growth temperatures of less than ∼100 °C under both Ga-rich and N-rich growth conditions. The formation of amorphous GaN1
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9c1e3dbbaaa2b65d2a37de7012d5e039
https://doi.org/10.1002/pssa.201100312
https://doi.org/10.1002/pssa.201100312
Autor:
F. Luckert, S. Puttnins, M. V. Yakushev, A. V. Mudryi, H. Zachmann, V.F. Gremenok, Robert W. Martin, A.V. Karotki
Publikováno v:
Thin Solid Films. 519:7264-7267
Solar cells with the structure ZnO:Al/i-ZnO/CdS/Cu(In,Ga)Se-2/Mo/polyimide were examined using a range of techniques. The elemental composition of the Cu(InGa)Se-2 (CIGS) layers, their crystalline structure and optical properties were studied. Photol
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b67ed741a6baad76e7aaa31ac79bef29
https://doi.org/10.1016/j.tsf.2010.12.211
https://doi.org/10.1016/j.tsf.2010.12.211
Autor:
C. T. Foxon, Anthony J. Kent, Sergei V. Novikov, F. Luckert, Paul R. Edwards, Robert W. Martin, C.R. Staddon
Publikováno v:
Journal of Crystal Growth. 323:80-83
We have studied the growth of zinc-blende GaN and AlxGa1-xN layers, structures and bulk crystals by molecular beam epitaxy (MBE). MBE is normally regarded as an epitaxial technique for growth of very thin layers with monolayer control of their thickn
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::12629e11808a1ee5a305170ce78456f9
https://doi.org/10.1016/j.jcrysgro.2010.10.125
https://doi.org/10.1016/j.jcrysgro.2010.10.125
Autor:
C. T. Foxon, R. E. L. Powell, A. V. Akimov, F. Luckert, C.R. Staddon, Anthony J. Kent, Paul R. Edwards, Sergei V. Novikov, Robert W. Martin
Publikováno v:
Journal of Crystal Growth. 322:23-26
We have studied the growth of wurtzite GaN and AlxGa1−xN layers and bulk crystals by molecular beam epitaxy (MBE). MBE is normally regarded as an epitaxial technique for the growth of very thin layers with monolayer control of their thickness. Howe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c27ae4ad491249d9a31de38714643738
https://doi.org/10.1016/j.jcrysgro.2011.03.016
https://doi.org/10.1016/j.jcrysgro.2011.03.016
Autor:
C.R. Staddon, Jonathan D. Denlinger, C. T. Foxon, Wladek Walukiewicz, Sergei V. Novikov, F. Luckert, M. Hawkridge, Robert W. Martin, I. Demchenko, R. Broesler, Paul R. Edwards, Kin Man Yu, Zuzanna Liliental-Weber
Publikováno v:
Journal of Crystal Growth. 323:60-63
Using low temperature MBE, we have shown that it is possible to grow amorphous GaN1-xAsx layers with a variable As content (0 < x < 0.8) on both crystalline (sapphire and silicon) and amorphous (glass and Pyrex glass) substrates. Despite the fact tha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::be4425110490798c0e27babfc2cbf79e
https://doi.org/10.1016/j.jcrysgro.2010.11.064
https://doi.org/10.1016/j.jcrysgro.2010.11.064
Publikováno v:
Journal of Applied Spectroscopy. 77:668-674
Thin films of Cu(In, Ga)Se2 (CIGS) with a Ga/(Ga + In) ratio of ~0.27 corresponding to the standard elemental composition for solar-energy transducers were grown on Mo-coated glass substrates by the Cu, In, Ga, and Se co-evaporation technique from di
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e2b8fedc261788ef4176bb8199b7f870
https://doi.org/10.1007/s10812-010-9385-6
https://doi.org/10.1007/s10812-010-9385-6
Autor:
V. F. Gremenok, M. V. Yakushev, A. V. Karotki, Robert W. Martin, A. V. Mudryi, V.B. Zalesski, F. Luckert
Publikováno v:
Journal of Applied Spectroscopy. 77:371-377
The chemical composition of Cu(In,Ga)Se-2 (CIGS) semiconductor compounds is analyzed by local x-ray spectral microanalysis and scanning Auger electron spectroscopy. X-ray diffraction analysis reveals a difference in the predominant orientation of CIG
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::728880bdd6884a6735e5db3e11f25fd1
https://doi.org/10.1007/s10812-010-9341-5
https://doi.org/10.1007/s10812-010-9341-5
Autor:
Zuzanna Liliental-Weber, Jonathan D. Denlinger, I. N. Demchenko, M. Hawkridge, C.R. Staddon, Robert W. Martin, Wladek Walukiewicz, R. Broesler, Vincent M. Kao, C. T. Foxon, F. Luckert, Kin Man Yu, Sergei V. Novikov
Publikováno v:
physica status solidi c. 7:1847-1849
A new alloy system, the GaN(sub 1-x)As(sub x) alloys in the whole composition range was successfully synthesized using the non-equilibrium low temperature molecular beam epitaxy method. The alloys are amorphous in the composition range of 0.17 x 0.75
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1bf1a761fb9535a4d08c774275ebf917
https://doi.org/10.1002/pssc.200983430
https://doi.org/10.1002/pssc.200983430
Autor:
C. T. Foxon, Anthony J. Kent, Sergei V. Novikov, F. Luckert, Paul R. Edwards, Robert W. Martin, Norzaini Zainal
Publikováno v:
physica status solidi c. 7:2033-2035
In this paper we have studied the unintentional incorporation of arsenic into thick (up to ∼75 μm) zinc-blende (cubic) GaN and AlGaN layers grown by a plasma-assisted molecular beam epitaxy (PA-MBE) on (001) GaAs substrates. We present detailed st
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a5fb27285363734a8c88cf26377b86d5
https://doi.org/10.1002/pssc.200983420
https://doi.org/10.1002/pssc.200983420