Thermo-desorption measurements during N-doped Ge-rich Ge2Sb2Te5 crystallization

Autor: J Remondina, A Portavoce, M Bertoglio, G Roland, E Petroni, D Benoit, Y Le Friec, F Lorut, M Putero

Publikováno v: Nanotechnology. 34:285702

Ge-rich Ge2Sb2Te5 (GGST) is considered as one of the best candidates for industrial phase change memory production. GGST memory cells are generally embedded with Si or Ti nitride layers to prevent oxidation, as it leads to an undesired decrease of th

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::70e87cf1ffc4108e8a131537a52aaad0
https://doi.org/10.1088/1361-6528/accc38

In-Situ Electrical Biasing of Electrically Connected TEM Lamellae with Embedded Nanodevices

Autor: Cécile Marcelot, F. Lorut, Christophe Gatel, Martin Hÿtch, Lucas Chapuis, Kilian Gruel, Maria Brodovoi, Aurélien Masseboeuf

Publikováno v: ISTFA 2021
ISTFA 2021, Oct 2021, Phoenix, France. pp.190-195, ⟨10.31399/asm.cp.istfa2021p0190⟩

International audience; In response to a continually rising demand for high performance and low-cost devices, and equally driven by competitivity, the microelectronics industry excels in meeting innovation challenges and further miniaturizing product

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2cbcc907ec12249a2f2321dd893f6dd4
https://hal.science/hal-03412037/document

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Correlation Between Electromigration-Related Void Volumes and Time-to-Failure by High Resolution X-Ray Tomography and Modeling

Autor: Pierre Bleuet, Julio Cesar da Silva, F. Lorut, David Bouchu, Herve Manzanarez, Sandrine Lhostis, Peter Cloetens, A. Fraczkiewicz, Stephane Moreau

Publikováno v: IEEE Electron Device Letters
IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers, 2019, 40 (11), pp.1808-1811. ⟨10.1109/LED.2019.2945089⟩
IEEE Electron Device Letters, 2019, 40 (11), pp.1808-1811. ⟨10.1109/LED.2019.2945089⟩

International audience; High resolution synchrotron tomography has demonstrated a proportionality between electromigration induced void volume and time-to-failure in hybrid bonding based test structures. A conventional failure by voiding in long feed

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::55c45e1eaf4295faf2077006d3b47318
https://hal.archives-ouvertes.fr/hal-02879698

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