Zobrazeno 1 - 10
of 33
pro vyhledávání: '"F. Linez"'
Publikováno v:
Physical Review B. 94(1):1-11
We have determined positron annihilation characteristics (lifetime and Doppler broadening) in six basic vacancy-type defects of $6H$-SiC and two nitrogen-vacancy complexes using ab initio calculations. The positron characteristics obtained allow us t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bd6baa5b9f3fa8eadd8f60fea4b5dcaa
https://doi.org/10.1103/PhysRevB.94.014103
https://doi.org/10.1103/PhysRevB.94.014103
Autor:
Benjamin Damilano, C. Chaix, Marc Portail, Yvon Cordier, Phannara Aing, Philippe Vennéguès, Filip Tuomisto, Denis Lefebvre, M. Nemoz, F. Linez, Eric Frayssinet
Publikováno v:
Journal of crystal growth. 433:165-171
The behavior of a high density radical source for the plasma assisted molecular beam epitaxy of GaN and AlGaN compounds is studied and compared with the one of a conventional plasma source. Plasma light emission correlates with the GaN growth rate. B
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fd6a22d582f430f2b4c4e3635fba457d
https://doi.org/10.1016/j.jcrysgro.2015.10.017
https://doi.org/10.1016/j.jcrysgro.2015.10.017
Autor:
Stephan Lany, Filip Tuomisto, Dennis Nordlund, Eric S. Toberer, Adele C. Tamboli, Angela N. Fioretti, Steven T. Christensen, John Vinson, Christopher M. Caskey, Craig P. Schwartz, F. Linez, Andriy Zakutayev, David Prendergast
Publikováno v:
Journal of applied physics, vol 119, iss 18
Semiconductor materials that can be doped both n-type and p-type are desirable for diode-based applications and transistor technology. Copper nitride (Cu3N) is a metastable semiconductor with a solar-relevant bandgap that has been reported to exhibit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3fb0a926c4f1d7551ff89ed0f1a6e8ac
https://pubmed.ncbi.nlm.nih.gov/27746508
https://pubmed.ncbi.nlm.nih.gov/27746508
Autor:
J. García López, F. Linez, Jyrki Räisänen, J. Ceballos, M. Rodriguez-Ramos, M. C. Jiménez-Ramos
Publikováno v:
Digital.CSIC. Repositorio Institucional del CSIC
instname
instname
The transport properties of a series of Si and SiC diodes have been studied using the Ion Beam Induced Charge (IBIC) technique. Structural defects were induced into the samples during the irradiation with 17 MeV protons. The experimental values of th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a049ca80bd950c487e025f39b71480e0
http://hdl.handle.net/10261/158561
http://hdl.handle.net/10261/158561
Autor:
Guillaume Guimbretière, Patrick Simon, Marie-France Barthe, F. Linez, A. Gentils, Aurélien Canizares
Publikováno v:
Journal of Raman Spectroscopy. 43:939-944
Silicon carbide is an interesting material for GEN IV fission reactor projects because of its excellent properties. However, these properties will be altered under extreme conditions such as irradiation because of accumulation of damage. Mechanisms p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::15091b299e3e6d782cff951f36d4ebfa
https://doi.org/10.1002/jrs.3118
https://doi.org/10.1002/jrs.3118
Autor:
Patrick Simon, F. Linez, Lionel Thomé, Marie-France Barthe, Aurélie Gentils, Aurélien Canizares
Publikováno v:
Journal of Materials Science
Journal of Materials Science, Springer Verlag, 2011, 46, pp.6390-6395. ⟨10.1007/s10853-011-5587-4⟩
Journal of Materials Science, Springer Verlag, 2011, 46, pp.6390-6395. ⟨10.1007/s10853-011-5587-4⟩
This article reports on the influence of the ion energy on the damage induced by Au-ion implantation in silicon carbide single crystals. 6H-SiC samples were implanted with Au ions at room temperature at two different energies: 4 and 20 MeV. Both Ruth
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e7652bda17c712c496930c7789711d84
https://doi.org/10.1007/s10853-011-5587-4
https://doi.org/10.1007/s10853-011-5587-4
Autor:
K. Krieger, R. Neu, V. Philipps, T. Dittmar, Marek Rubel, P. Languille, B. Pegourie, Y. Corre, P. Coad, J. Bucalossi, J. Likonen, Estelle Gauthier, A. Kallenbach, F. Linez, R.P. Doerner, Thierry Loarer, Emmanuelle Tsitrone, A. Kirschner, Bruce Lipschultz, Andrey Litnovsky, P. Roubin, J. Roth, Arkadi Kreter, Y. Marandet, J. F. Artaud, V. Rohde, S. Brezinsek, Céline Martin, P. Wienhold, C. Brosset, M. Mayer
Publikováno v:
Tsitrone, E, Pégourié, B, Marandet, Y & Likonen, J 2011, ' Multi machine scaling of fuel retention in 4 carbon dominated tokamaks ', Journal of Nuclear Materials, vol. 415, no. 1, pp. S735-S739 . https://doi.org/10.1016/j.jnucmat.2011.01.132
In order to benchmark predictions for the in vessel tritium inventory in ITER, a survey of fuel retention measured in 4 carbon dominated tokamaks (TEXTOR, ASDEX Upgrade in the 2002–2003 carbon configuration, Tore Supra and JET) was performed, showi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e6108cc7774753789eca86ac1d4a97a9
https://cris.vtt.fi/en/publications/6ade3140-bc22-4033-b068-804550b03111
https://cris.vtt.fi/en/publications/6ade3140-bc22-4033-b068-804550b03111
Autor:
E. Delchambre, F. Samaille, P. Hertout, F. Kazarian, B. Pégourié, S. Vartanian, C. Desgranges, M. Kočan, G. Dunand, P. Monier-Garbet, M. Richou, M. Mayer, J. Y. Pascal, A. Beauté, A. Martinez, James Paul Gunn, A. Ekedahl, E. Aréou, Suk-Ho Hong, F. Linez, A. Escarguel, Céline Martin, R. Sabot, E. Tsitrone, C. Gil, Cécile Arnas, P. Moreau, O. Meyer, P. Oddon, J. Lasalle, Yannick Marandet, P. Devynck, S. Bremond, L. Manenc, D. Douai, F. Saint-Laurent, Eric Gauthier, Y. Corre, F. Rimini, J. Bucalossi, J. Roth, C. Brosset, Pascale Roubin, S. Carpentier
Publikováno v:
Journal of Nuclear Materials
Journal of Nuclear Materials, v.390-391, 550-555 (2009)
Journal of Nuclear Materials, v.390-391, 550-555 (2009)
A specific experiment was performed in Tore Supra, dedicated to the search for consistency between wall inventories estimated from gas balance and post-mortem analysis and to the characterization of the D-retention mechanism. More than 160 similar di
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ba1b34e5f45bbb1c3d8ae28f3e3667e3
https://doi.org/10.1016/j.jnucmat.2009.01.095
https://doi.org/10.1016/j.jnucmat.2009.01.095
Autor:
Pierre Desgardin, Thierry Sauvage, Blandine Courtois, H. Erramli, M.F. Barthe, Frédérico Garrido, F. Linez
Publikováno v:
Journal of Nuclear Materials
Journal of Nuclear Materials, Elsevier, 2015, 459, pp.62-69. ⟨10.1016/j.jnucmat.2014.12.118⟩
Journal of Nuclear Materials, Elsevier, 2015, in press. ⟨10.1016/j.jnucmat.2014.12.118⟩
Journal of Nuclear Materials, Elsevier, 2015, 459, pp.62-69. ⟨10.1016/j.jnucmat.2014.12.118⟩
Journal of Nuclear Materials, Elsevier, 2015, in press. ⟨10.1016/j.jnucmat.2014.12.118⟩
International audience; The question of the helium behavior in silicon carbide has been studied at the atomic scale by numerical simulations, but no experiment has been carried out to assess the results hitherto. This paper describes the first experi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b5ebdd211223edf5ca625f044b2b04fa
http://hal.in2p3.fr/in2p3-01140987
http://hal.in2p3.fr/in2p3-01140987
Autor:
Filip Tuomisto, James S. Speck, Christian Rauch, F. Linez, Jyrki Räisänen, Lukasz Kilanski, S Choi, M Ritt
InN layers have been implanted with helium at 158 keV at various fluences to study the nature of the generated defects. The defects have been probed using positron annihilation spectroscopy. The first measurements showed that at least two different k
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8190297cef9550c63ffebac9e6ed0afe
https://aaltodoc.aalto.fi/handle/123456789/26976
https://aaltodoc.aalto.fi/handle/123456789/26976