Zobrazeno 1 - 10
of 78
pro vyhledávání: '"F. Lemmi"'
Publikováno v:
Journal of Applied Physics. 90:1589-1599
A large-area two-color image sensor array made with amorphous silicon (a-Si:H) technology is described. Mesa-isolated double-junction p-i-n-i-p a-Si:H sensors discriminate the two spectral bands—blue/green and red—according to the polarity of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e5babda0e7e216ce99322b8fdd77a5de
https://doi.org/10.1063/1.1381547
https://doi.org/10.1063/1.1381547
Autor:
F. Lemmi
Publikováno v:
Journal of Non-Crystalline Solids. :1198-1202
High-quality amorphous silicon p+–i–n+ diodes have very small dark leakage currents, allowing the detection of low intensity illuminations with a dynamic range of several orders of magnitude. Low currents imply that a change in the charging state
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::97c2adffe29725b368053202e5ef8c2b
https://doi.org/10.1016/s0022-3093(99)00774-7
https://doi.org/10.1016/s0022-3093(99)00774-7
Publikováno v:
Journal of Non-Crystalline Solids. :1203-1207
Two-dimensional amorphous silicon image sensor arrays are used for medical imaging and document scanning. Our high-resolution arrays use a continuous p + –i–n + photodiode sensor layer with patterned n + -doped contacts. We report measurements of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c27df5a49a10fcdf00e32a7e03feefde
https://doi.org/10.1016/s0022-3093(99)00925-4
https://doi.org/10.1016/s0022-3093(99)00925-4
Autor:
F. Lemmi, R. A. Street
Publikováno v:
IEEE Transactions on Electron Devices. 47:2404-2409
Transient leakage currents in amorphous silicon thin-film transistors caused by injection at the drain contact are investigated using up to one hundred devices connected in parallel. Transients extend to many seconds and vary in characteristics with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cb1d2998a71b7859f20638e75f95211f
https://doi.org/10.1109/16.887029
https://doi.org/10.1109/16.887029
Autor:
F. Lemmi, R.A. Street
Publikováno v:
IEEE Transactions on Electron Devices. 47:2399-2403
The effects of channel charge emission on the transient leakage currents of amorphous silicon thin-film transistors are described. Up to one hundred devices connected in parallel are used to allow measurement of currents below 1 fA. We develop a proc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fefcd6980aab71697159cff63760903c
https://doi.org/10.1109/16.887028
https://doi.org/10.1109/16.887028
Publikováno v:
Journal of Applied Physics. 86:2660-2667
Electronic transport and optical measurements in polycrystalline Pbl2 are reported as part of a study to evaluate the material for large area x-ray imaging applications. The films are deposited by vacuum evaporation with thickness 20–100 μm and ha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6b86fcfc74dd8483919183e851653edb
https://doi.org/10.1063/1.371107
https://doi.org/10.1063/1.371107
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Publikováno v:
Journal of Non-Crystalline Solids. :1340-1344
Heterojunction adjustable threshold three color detectors (ATCDs) have been shown to detect the three fundamental colors of the visible spectrum under three different bias conditions. Operation has already been demonstrated under steady-state conditi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c69e8c1a8c0a6d97dfc29c5e8d69e7ff
https://doi.org/10.1016/s0022-3093(98)00359-7
https://doi.org/10.1016/s0022-3093(98)00359-7
Publikováno v:
IEEE Transactions on Electron Devices. 44:1410-1416
In this paper, we investigate the transient behavior of a-Si:H/a-SiC:H adjustable-threshold three-color detectors (ATCDs) for applications in bidimensional large area image sensors. Red, green, and blue color sensing in the charge integration regime
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf19228bab90e1cb11480428859e6422
https://doi.org/10.1109/16.622595
https://doi.org/10.1109/16.622595
Autor:
T. Sasagawa, S. Lin, J.Y. Chen, F. Lemmi, A. Hua, W. Chung, B.C. Drews, P.M. Smith, J.R. Stern
Publikováno v:
IEEE Electron Device Letters. 25:486-488
Poly-Si thin-film transistors (TFTs) have recently been introduced to commercial glass flat-panel displays. This letter presents a manufacturable process for fabricating poly-Si TFTs directly on plastic substrates that exceed TFT parameter requiremen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5abfd2cb1f2fba653fa3be7595116ae5
https://doi.org/10.1109/led.2004.831208
https://doi.org/10.1109/led.2004.831208