Zobrazeno 1 - 10
of 158
pro vyhledávání: '"F. Lemeilleur"'
Publikováno v:
Materials Science in Semiconductor Processing. 3:257-261
Radiation hardness results of silicon detectors fabricated on bulk float-zone (FZ) material enriched either by carbon or by oxygen are reported. The detectors were irradiated by nuclear reactor neutrons, by 24 GeV/ c protons and by 192 MeV pions. It
Autor:
Miguel Ullan, B.S. Avset, Manuel Lozano, Francesca Campabadal, Arie Ruzin, C. Martı́nez, Luis Fonseca, E. Nossarzewska-Orlowska, F. Lemeilleur
Publikováno v:
Scopus-Elsevier
Radiation produces lattice damage in silicon by displacing the atoms from their original positions and thereby generating the corresponding defects. As a result, new states are created in the semiconductorforbidden band gap, negatively affecting the
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 443:148-155
The changes of the electrical properties induced by hadron irradiation on silicon detectors have been studied by using the device level simulator HFIELDS. The model of the radiation damage assumes the introduction of radiation-induced acceptor and do
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 438:429-432
The tolerance of silicon detectors to hadron irradiation can be improved by the introduction of a high concentration of oxygen into the starting material. High-resistivity Floating-Zone (FZ) silicon is required for detectors used in particle physics
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 434:90-102
A model describing the transport of the carriers of the charge deposited in n-type silicon detectors by ionizing particles is presented. In order to reproduce the experimental current pulse responses induced by alpha and beta particles in non-irradia
Autor:
F. Lemeilleur
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 434:82-89
The radiation hardness of high grade silicon detectors is summarized in terms of an increase of the diode reverse current, evolution of the full depletion voltage and charge collection efficiency. With the aim of improving their radiation tolerance,
Autor:
Stephen Watts, Gianluigi Casse, R Talamonti, F. Lemeilleur, Maurice Glaser, A. Zanet, Arie Ruzin
Publikováno v:
Nuclear Physics B - Proceedings Supplements. 78:645-649
Recent results on the radiation hardness of silicon detectors fabricated on epitaxial and float zone bulk silicon enriched by various impurities, such as carbon, oxygen, tin and platinum are reported. A new methodology of measurements of electrical p
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 426:94-98
Detectors for high-energy particles sustain a substantial amount of structural defects induced by the particles during the operation period. Some of the defects have been found to be electrically active, degrading the detector's performance. Understa
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 426:99-108
The electrical characteristics of non-irradiated and irradiated n-type silicon detectors (p + –n–n + diode) are extracted by fitting a charge transport model to a set of experimental data obtained from the measurement of the current pulse respons
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 426:72-77
After the upgrade of the CERN-PS East Hall, one irradiation zone with 24 GeV/ c protons is foreseen to be operational by the second half of 1998. Another irradiation zone with about 1 MeV neutrons will be commissioned by the first half of 1999.