Zobrazeno 1 - 10
of 141
pro vyhledávání: '"F. Lalanne"'
Autor:
F. Guyader, P. Batude, P. Malinge, E. Vire, J. Lacord, J. Jourdon, J. Poulet, L. Gay, F. Ponthenier, S. Joblot, A. Farcy, L. Brunet, A. Albouy, C. Theodorou, M. Ribotta, D. Bosch, E. Ollier, D. Muller, M. Neyens, D. Jeanjean, T. Ferrotti, E. Mortini, J.G. Mattei, A. Inard, R. Fillon, F. Lalanne, F. Roy, E. Josse
Publikováno v:
2022 International Electron Devices Meeting (IEDM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b8c8470b7f599580ca94cfd1cec41f23
https://doi.org/10.1109/iedm45625.2022.10019432
https://doi.org/10.1109/iedm45625.2022.10019432
Autor:
J. S. Steckel, E. Josse, A. G. Pattantyus-Abraham, M. Bidaud, B. Mortini, H. Bilgen, O. Arnaud, S. Allegret-Maret, F. Saguin, L. Mazet, S. Lhostis, T. Berger, K. Haxaire, L. L. Chapelon, L. Parmigiani, P. Gouraud, M. Brihoum, P. Bar, M. Guillermet, S. Favreau, R. Duru, J. Fantuz, S. Ricq, D. Ney, I. Hammad, D. Roy, A. Arnaud, B. Vianne, G. Nayak, N. Virollet, V. Farys, P. Malinge, A. Tournier, F. Lalanne, A. Crocherie, J. Galvier, S. Rabary, O. Noblanc, H. Wehbe-Alause, S. Acharya, A. Singh, J. Meitzner, D. Aher, H. Yang, J. Romero, B. Chen, C. Hsu, K. C. Cheng, Y. Chang, M. Sarmiento, C. Grange, E. Mazaleyrat, K. Rochereau
Publikováno v:
2021 IEEE International Electron Devices Meeting (IEDM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f9ba7ab2beceb487279311b475596647
https://doi.org/10.1109/iedm19574.2021.9720560
https://doi.org/10.1109/iedm19574.2021.9720560
Akademický článek
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Publikováno v:
European Journal of Clinical Investigation. 29:139-144
Background Diacylglycerols (DAGs), which are well-known components of insect lipophorins, have been recently recognized as a major glyceride of human high-density lipoprotein (HDL). Moreover, DAGs are good substrates for hepatic lipase and for the ph
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e83e7784b3dd3583cd46cb2429ca5676
https://doi.org/10.1046/j.1365-2362.1999.00438.x
https://doi.org/10.1046/j.1365-2362.1999.00438.x
Publikováno v:
Microelectronic Engineering. 20:255-275
A computer software is developed for calculation of the energy density distribution in the SAL 601 resist. In the case of a point source electron beam both lateral and depth evolution of the energy deposition are determined. Simulation of a line sour
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c5110c884ab55175e30b56a5e94cc162
https://doi.org/10.1016/0167-9317(93)90005-p
https://doi.org/10.1016/0167-9317(93)90005-p
Autor:
F. Berthollet, F. Lalanne, L. Pinzelli, A. Poncet, J.-P. Carrere, G. Bossu, Sebastien Cremer, C. Plossu, D. Jeanjean, Roland Pantel
Publikováno v:
2009 Proceedings of the European Solid State Device Research Conference.
A new triple-gate transistor, formed by recessing the oxide layer in the isolation trenches, without any other significant modification in the conventional planar transistor process flow, is evaluated as the access transistor of the 65nm node embedde
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ec58b3175b322bc63974f795b6baf736
https://doi.org/10.1109/essderc.2009.5331317
https://doi.org/10.1109/essderc.2009.5331317
Autor:
D. Bensahel, J. L. Regolini, P.A. Badoz, G. Vincent, A. Gruhle, A. Halimaoui, F. Lalanne, F. Chevalier, M. Mouis
Publikováno v:
Microelectronic Engineering. 15:27-30
We report the fabrication of etched-groove silicon permeable base transistors (PBTs) with mushroom-shaped 0.2-0.4 ?m wide source fingers. This structure enables both the passivation of the Si finger sidewalls and the reinforcement of the platinum gat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c3a3b115559eb69488407f7f49ebab5
https://doi.org/10.1016/0167-9317(91)90176-e
https://doi.org/10.1016/0167-9317(91)90176-e
Publikováno v:
Microelectronic Engineering. 13:217-220
A new mask fabrication technique is described using a Cr deposition by liftoff after e-beam exposure of PMMA resist. No chromium etch step is required. Gratings down to 200nm have been produced and successfully transfered into Si by deep UV lithograp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::190821bffd1ebdb57cc759596765e406
https://doi.org/10.1016/0167-9317(91)90081-n
https://doi.org/10.1016/0167-9317(91)90081-n
Autor:
H. Del-Puppo, F. Lalanne, Bruce Boeck, N. Emonet, Audrey Berthelot, Christian Caillat, Vincent Huard, S. Barnola
Publikováno v:
2006 European Solid-State Device Research Conference.
For the first time, we report a complete evaluation of a TiN/ZrO 2/TiN stacked capacitor suitable for 45 nm embedded DRAM (eDRAM). Indeed, this study, done on a real integration (65 nm 3D stacked capacitor flow), shows that zirconium oxide, deposited
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f5dd5f2ffa69bc67ebf422857863e427
https://doi.org/10.1109/essder.2006.307708
https://doi.org/10.1109/essder.2006.307708
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
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