Zobrazeno 1 - 10
of 673
pro vyhledávání: '"F. La Via"'
Autor:
M. Agati, S. Boninelli, C. Calabretta, F. Mancarella, M. Mauceri, D. Crippa, M. Albani, R. Bergamaschini, L. Miglio, F. La Via
Publikováno v:
Materials & Design, Vol 208, Iss , Pp 109833- (2021)
In this paper we report the morphology and the microstructural properties of thick [1 1 1]-oriented 3C-SiC films epitaxially grown on T-shaped Si micropillars. This compliant substrate was designed to release the stress developed in 3C-SiC grown on S
Externí odkaz:
https://doaj.org/article/a54e75fd482c448780f0f6a27b160601
Autor:
F. Torregrosa, M. Canino, F. Li, F. Tamarri, B. Roux, S. Morata, F. La Via, M. Zielinski, R. Nipoti
Publikováno v:
MRS Advances. 7:1347-1352
Poster presented at the 2021 European Conference on Silicon Carbide and Related Materials(ECSCRM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4095d0ae4b77be675798ca3b33a4ac87
Akademický článek
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Autor:
M.H. Kushoro, M. Rebai, F. La Via, A. Meli, L. Meda, M. Parisi, E.P. Cippo, O. Putignano, A. Trotta, M. Tardocchi
Publikováno v:
Journal of Instrumentation. 18:C03007
Silicon carbide detectors represent an alternative to diamond detectors for fast neutron detection in harsh environments, especially fusion plasmas. Previous studies on thin prototypes (either 10 μm or 100 μm thick) suggested that thicker active vo
Autor:
G. M. Vanacore, D. Chrastina, E. Scalise, L. Barbisan, A. Ballabio, M. Mauceri, F. La Via, G. Capitani, D. Crippa, A. Marzegalli, R. Bergamaschini, L. Miglio
In this paper, we address the unique nature of fully textured, high surface-to-volume 3C-SiC films, as produced by intrinsic growth anisotropy, in turn generated by the high velocity of the stacking fault growth front in two-dimensional (111) platele
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e15a063058b57b19d0f87083aef8f375
https://hdl.handle.net/11311/1227522
https://hdl.handle.net/11311/1227522
Publikováno v:
Journal of Applied Physics. 132:245701
The interfacial electrical properties of deposited oxide (SiO2) onto cubic silicon carbide (3C-SiC) were investigated after different post-oxide deposition annealing (PDA) by means of metal–oxide–semiconductor (MOS) capacitors and nanoscale capac
Autor:
F. Roccaforte, G. Greco, P. Fiorenza, S. Di Franco, F. Giannazzo, F. La Via, M. Zielinski, H. Mank, V. Jokubavicius, R. Yakimova
Publikováno v:
Applied Surface Science. 606:154896
Autor:
Cristiano Calabretta, Roberto Bergamaschini, Danilo Crippa, F. La Via, Marco Mauceri, Fulvio Mancarella, Leo Miglio, M Albani, S. Boninelli, Marta Agati
Publikováno v:
Materials & Design, Vol 208, Iss, Pp 109833-(2021)
In this paper we report the morphology and the microstructural properties of thick [1 1 1]-oriented 3C-SiC films epitaxially grown on T-shaped Si micropillars. This compliant substrate was designed to release the stress developed in 3C-SiC grown on S
Autor:
Michael R. Jennings, Fan Li, Tianxiang Dai, F. La Via, Philip Mawby, Marcin Zielinski, A. B. Renz, Vishal Shah, Nicholas E. Grant, L. Zhang, G. W. C. Baker, Peter M. Gammon, John D. Murphy, Oliver J. Vavasour
This letter reports on initial investigation results on the material quality and device suitability of a homo-epitaxial 3C-SiC growth process. Atomic force microscopy surface investigations revealed root-mean square surface roughness levels of 163.21
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::29ec9881e7686685e2117cdfd90aa6f9
http://wrap.warwick.ac.uk/150801/7/WRAP-Initial-investigations-MOS-interface-3C-SiC-layers-device-applications-2021.pdf
http://wrap.warwick.ac.uk/150801/7/WRAP-Initial-investigations-MOS-interface-3C-SiC-layers-device-applications-2021.pdf