Zobrazeno 1 - 10
of 10
pro vyhledávání: '"F. L. Pedrotti"'
Publikováno v:
Journal of Applied Physics. 77:3919-3926
Deep level transient spectroscopy (DLTS) and temperature‐dependent Hall effect measurements were performed on undoped, n‐, and p‐type GaAs doped with Er either by ion implantation or during molecular beam epitaxial (MBE) crystal growth. For lig
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::78d7902199640533c103bdfe5a49686f
https://doi.org/10.1063/1.358571
https://doi.org/10.1063/1.358571
Publikováno v:
Journal of Applied Physics. 51:5781-5784
The electrical properties of GaAs, doubly implanted with Ge+Ga, have been studied by the van der Pauw–Hall‐effect/sheet‐resistivity technique. In all cases both species of the dual implants were implanted sequentially at the same ion energy of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::18d18dd18c2f4cd67bbfa4b108e1eb4c
https://doi.org/10.1063/1.327533
https://doi.org/10.1063/1.327533
Autor:
F. L. Pedrotti, D. R. Matthys
Publikováno v:
American Journal of Physics. 50:990-995
An experiment using a standard Michelson interferometer and a microcomputer to produce and display Fourier transform spectrograms in the advanced undergraduate laboratory is described. Fourier transforms of laser and mercury light sources, as well as
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6d4b50551907bdbcda9a75bf4cedd003
https://doi.org/10.1119/1.12939
https://doi.org/10.1119/1.12939
Publikováno v:
Journal of Applied Physics. 53:6148-6153
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a946b41968ebadeda36e9d2be9703c56
https://doi.org/10.1063/1.331579
https://doi.org/10.1063/1.331579
Publikováno v:
Physical Review B. 1:4784-4791
A comparison between the ultraviolet-reflectivity spectrum and the characteristic energy-loss spectrum of ZnO has been carried out. Reflectivity measurements made over an energy range of band gap to 22 eV yielded a spectrum with structure at 3.34, 5.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cebf2734c0ad49c7f5551abb7d18c7ff
https://doi.org/10.1103/physrevb.1.4784
https://doi.org/10.1103/physrevb.1.4784
Autor:
R. L. Hengehold, F. L. Pedrotti
Publikováno v:
Physical Review B. 6:3026-3031
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::63bb870e1c34b09554e8ed037e67d6a0
https://doi.org/10.1103/physrevb.6.3026
https://doi.org/10.1103/physrevb.6.3026
Autor:
R. L. Hengehold, F. L. Pedrotti
Publikováno v:
Journal of Applied Physics. 46:5202-5204
Ultraviolet reflectivity and reflection electron‐energy‐loss techniques have been used to determine the higher energy excitation spectra of the ternary compounds AgGaS2 and CuGaS2. The ultraviolet reflectivity spectra were obtained over the energ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c1845e60f20cecdb1b2b56cd6071aaca
https://doi.org/10.1063/1.321584
https://doi.org/10.1063/1.321584
Publikováno v:
Journal of Applied Physics. 53:1815-1817
A comparative study of secondary ion mass spectrometry (SIMS) atomic profiles and electrical profiles for S‐implanted GaAs has been made. For all doses, the electrical profiles are in good agreement with the SIMS profiles in the deep side of the sa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::830c8cabe0f2a618fd41853e061cb024
https://doi.org/10.1063/1.330594
https://doi.org/10.1063/1.330594
Publikováno v:
Applied Physics Letters. 35:197-199
The electrical properties of Ge‐implanted GaAs have been studied. Room‐temperature implantation was performed at 120 keV with doses ranging from 5×1012 to 3×1015/cm2. Implanted samples were annealed with pyrolytic Si3N4 encapsulants at temperat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::17e0207aae2a2f37e96012ae9d6b6601
https://doi.org/10.1063/1.91035
https://doi.org/10.1063/1.91035
Autor:
F. L. Pedrotti, D. C. Reynolds
Publikováno v:
Physical Review. 127:1584-1586
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::53b35e3364ff0649fbafd2677eda62ac
https://doi.org/10.1103/physrev.127.1584
https://doi.org/10.1103/physrev.127.1584