Zobrazeno 1 - 10
of 22
pro vyhledávání: '"F. Kobbi"'
Publikováno v:
Microelectronics Reliability. 40:1443-1447
The reliability of GaAs-based magnetic sensors developed for power metering has been investigated. The sensing device, which comprises a pseudomorphic quantum well, operates using the Hall effect principle. Accelerated aging tests were performed at w
Publikováno v:
Journal of Crystal Growth. :727-733
Good control of the quality of materials grown by MBE and the possibility to grow sophisticated heterostructures based on III–V compounds have opened the way to new opportunities for device applications in electronics and optoelectronics. The recen
Autor:
Ryszard Piotrzkowski, F. Kobbi, Jean-Louis Robert, V Mosser, Elzbieta Litwin-Staszewska, Sylvie Contreras
Publikováno v:
Journal of Physics and Chemistry of Solids. 56:599-602
In this paper, we report on thermostimulated electron emission experiments from resonant DX levels in bulk GaAlAs materials and in δ-doped GaAlAs/GaInAs/GaAs pseudomorphic heterostructures. To this end, the carriers were frozen out at low temperatur
Autor:
Konstantinos Zekentes, Elzbieta Litwin-Staszewska, S. V. Iordanskii, Wojciech Knap, Jean-Louis Robert, C. Skierbiszewski, Vincent Mosser, A. Zduniak, F. Kobbi, G. E. Pikus
Publikováno v:
Acta Physica Polonica A. 87:427-432
Spin relaxation in degenerated two-dimensional (2D) electron gas is studied by measurements of the magnetic field dependence of the weak antilocalization corrections to the conductivity in GaInAs quantum wells. Consistent quantitative (up to order of
Autor:
Sylvie Contreras, Jean-Louis Robert, P Lorenzini, S. Aboulhouda, Konstantinos Zekentes, F. Kobbi, Vincent Mosser
Publikováno v:
Sensors and Actuators A: Physical. 43:135-140
We have investigated the interest of AlGaAs/InGaAs/GaAs heterostructures for the realization of Hall effect magnetic sensors with a high sensitivity and a low thermal drift. The physical phenomena responsible for the thermal drift of the Hall sensiti
Autor:
P Lorenzini, J. Denis, F. Kobbi, V. Mosser, Sylvie Contreras, Jean-Louis Robert, S. Aboulhouda
Publikováno v:
Sensors and Actuators A: Physical. 42:450-454
Hall sensors with a high sensitivity, a low thermal drift and a low offset voltage based on AlGaAs/InGaAs/GaAs heterostructures have been developed. The physical phenomena responsible for the thermal drift of the Hall sensitivity are reviewed and inv
Autor:
Vincent Mosser, Jean-Louis Robert, Czeslaw Skierbiszewski, Tadeusz Suski, Elzbieta Litwin-Staszewska, F. Kobbi
Publikováno v:
Journal of Applied Physics. 77:405-407
Variation of two‐dimensional electron gas mobility with carrier concentration ns has been examined for different modulation‐doped heterostructures of AlGaAs/InGaAs/GaAs. It is demonstrated that, depending on the method, electrons are distributed
Autor:
C. Skierbiszewski, V Mosser, Jean-Louis Robert, D. Dur, M. Kamal-Saadi, F. Kobbi, H. Sibari, Elzbieta Litwin-Staszewska, Andre Raymond, Wojciech Knap, Konstantinos Zekentes
Publikováno v:
Solid-State Electronics. 37:665-667
Combined studies of GaAlAs/GaInAs/GaAs pseudomorphic structures have been performed by means of transport under hydrostatic pressure, luminescence and cyclotron resonance emission experiments. The structures investigated were 130 A quantum wells. The
Autor:
O. Callen, S. Aboulhouda, J. M. Mercy, J. Chevrier, J.L. Robert, F. Kobbi, S. Contreras, V. Mosser, D. Adams
Publikováno v:
Proceedings of International Solid State Sensors and Actuators Conference (Transducers '97).
We have developed Hall sensors featuring a two-dimensional electron gas (2DEG) in a AlGaAs/InGaAs/GaAs delta-doped heterostructure. They show a large sensitivity (750 V/A/T), a low thermal drift (-140 ppm//spl deg/C), an excellent linearity vs. magne
Autor:
G. E. Pikus, Konstantinos Zekentes, F. G. Pikus, S. V. Iordanskii, A. Zduniak, Elzbieta Litwin-Staszewska, F. Kobbi, C. Skierbiszewski, D. Bertho, Yu. B. Lyanda-Geller, Wojciech Knap, Jean-Louis Robert, Vincent Mosser
The results of magnetoconductivity measurements in GaInAs quantum wells are presented. The observed magnetoconductivity appears due to the quantum interference, which lead to the weak localization effect. It is established that the details of the wea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4204360782196202f5ebd9e9cb074c13