Zobrazeno 1 - 10
of 48
pro vyhledávání: '"F. Keith. Perkins"'
Autor:
Adam L. Friedman, Aubrey T. Hanbicki, F. Keith Perkins, Glenn G. Jernigan, James C. Culbertson, Paul M. Campbell
Publikováno v:
Scientific Reports, Vol 7, Iss 1, Pp 1-9 (2017)
Abstract Electron-donors can impart charge to the surface of transition metal dichalcogenide (TMD) films while interacting with the film via a weak physisorption bond, making them ideal for vapor and gas sensors. We expose monolayer MoS2 and MoSe2 fi
Externí odkaz:
https://doaj.org/article/d8829c9ec2f94e5486f9ff54b756411b
Autor:
Hamzeh Kashani, Chunghwan Kim, Christopher Rudolf, F. Keith Perkins, Erin R. Cleveland, Wonmo Kang
Publikováno v:
Advanced Materials. 33:2170400
Autor:
Joshua A. Robinson, Kehao Zhang, Yuanxi Wang, Donna D. Deng, Boyang Zheng, Natalie Briggs, F. Keith Perkins, Vincent H. Crespi
Publikováno v:
Advanced Materials Interfaces. 7:2000856
Autor:
F. Keith Perkins, Jeremy T. Robinson, James C. Culbertson, Paul E. Sheehan, Eric S. Snow, Thomas L. Reinecke
Publikováno v:
Micro- and Nanotechnology Sensors, Systems, and Applications X.
The integration of graphene and 2D materials into device technologies requires a detailed understanding of how intrinsic and extrinsic forces impact their properties, as well as the development of engineering strategies to vary their properties for a
Autor:
Edward E. Foos, Jeremy T. Robinson, Arthur W. Snow, F. Keith Perkins, Mario G. Ancona, Eric S. Snow
Publikováno v:
IEEE Sensors Journal. 15:1301-1320
Although robust chemical vapor detection by chemielectric point sensors remains as a largely unmet challenge at present, the best performance to date and the most likely avenue for future progress is with sensor designs in which the transductive elem
Autor:
James C. Culbertson, Paul M. Campbell, Glenn G. Jernigan, Aubrey T. Hanbicki, F. Keith Perkins, Adam L. Friedman
Publikováno v:
Scientific Reports, Vol 7, Iss 1, Pp 1-9 (2017)
Electron-donors can impart charge to the surface of transition metal dichalcogenide (TMD) films while interacting with the film via a weak physisorption bond, making them ideal for vapor and gas sensors. We expose monolayer MoS2 and MoSe2 films to st
Publikováno v:
Handbook of Microlithography, Micromachining, and Microfabrication. Volume 1: Microlithography
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::43ea66fd5c6808cb8625cf2fe8991a7f
https://doi.org/10.1117/3.2265070.ch8
https://doi.org/10.1117/3.2265070.ch8
Autor:
Berend T. Jonker, Glenn G. Jernigan, Enrique Cobas, Adam L. Friedman, Aubrey T. Hanbicki, F. Keith Perkins, Paul M. Campbell
Publikováno v:
ResearcherID
MoS 2 , in single to few-layer format, is of interest because of its potential for advanced transistor and sensor applications. Its sizable bandgap enables single layer transistors with large on/off current ratios, and the large surface-to-volume rat
Autor:
James C. Culbertson, Paul M. Campbell, F. Keith Perkins, Aubrey T. Hanbicki, Adam L. Friedman
Publikováno v:
Nanoscale. 8(22)
Ultra-thin transition metal dichalcogenides (TMDs) films show remarkable potential for use in chemical vapor sensing devices. Electronic devices fabricated from TMD films are inexpensive, inherently flexible, low-power, amenable to industrial-scale p
Publikováno v:
Solid State Phenomena. 184:319-324
We report internal friction and shear modulus measurements of several types of synthesized graphene films. They include reduced graphene oxide, chemical-vapor deposited (CVD) graphene films on thin nickel films and on copper foils. These films were t