Zobrazeno 1 - 10
of 38
pro vyhledávání: '"F. Karbassian"'
Autor:
F. Karbassian, Mahmoud Behzadirad, Morteza Rezaei Talarposhti, Arash Kheyraddini Mousavi, Yaser Silani, Behnam Kheyraddini Mousavi
Publikováno v:
Materials Technology. :1-8
Metal Assisted Chemical Etching (MACE) is applied for generation of SiNWs (SiNWs). For the first time, the curved SiNWs are directly generated using MACE approach without any surface post-treatment...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4677f9b73cba2269d8426125b7d079e5
https://doi.org/10.1080/10667857.2020.1806607
https://doi.org/10.1080/10667857.2020.1806607
Autor:
Morteza Rezaei Talarposhti, Behnam Kheyraddini Mousavi, F. Karbassian, Arash Kheyraddini Mousavi
Publikováno v:
The European Physical Journal Applied Physics. 92:20101
Metal-assisted chemical etching (MACE) is applied for fabrication of silicon nanowires (SiNWs). We have shown the effect of amorphous sheath of SiNWs by treating the nanowires with SF6 and the resulting reduction of absorption bandwidth, i.e. making
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a3ab0fc27f858a1fe616deccafd3c38a
https://doi.org/10.1051/epjap/2020200071
https://doi.org/10.1051/epjap/2020200071
Autor:
F. Karbassian, R. Talei, B. Kheyraddini Mousavi, Shima Rajabali, Ebrahim Asl-Soleimani, Shams Mohajerzadeh
Publikováno v:
Journal of Electronic Materials. 43:1271-1279
Metal-assisted etching of silicon in HF/H2O2 aqueous solutions has been used to fabricate luminescent silicon nanowires (SiNWs) and porous silicon. The impact of the gold catalyst layer thickness and the etching solution on the morphology of the synt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c807596d4a869969acebad95fe4bfec7
https://doi.org/10.1007/s11664-014-3051-3
https://doi.org/10.1007/s11664-014-3051-3
Autor:
S. Mohajerzadeh, Yaser Abdi, Michael Robertson, F. Karbassian, T. Morrison, M. Bluteau, Sara Darbari
Publikováno v:
Thin Solid Films. 520:5021-5028
Si nanocrystals have been prepared by hydrogenation and subsequent annealing of as-deposited amorphous Si layers on glass and Si substrates. The hydrogenation process has been performed at 350 °C under radio frequency hydrogen plasma. The nanocrysta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::15fbc2cb727f10d6f6f16ae246a01df3
https://doi.org/10.1016/j.tsf.2012.03.033
https://doi.org/10.1016/j.tsf.2012.03.033
Publikováno v:
IEEE Electron Device Letters. 28:207-210
The fabrication of nanocrystalline silicon light-emitting diodes is reported using a novel plasma-enhanced hydrogenation method. The fabrication process consisted of the deposition of amorphous silicon on a silicon substrate, a hydrogen plasma treatm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3fad9442e8fa2ffe1a8d42b4623360e7
https://doi.org/10.1109/led.2007.891260
https://doi.org/10.1109/led.2007.891260
Publikováno v:
Solid-State Electronics. 50:1618-1624
The effects of RF-Plasma hydrogenation and applied mechanical strain on the crystallization of silicon layers deposited on plastic substrates have been investigated where the maximum temperature remained below 170 °C for the entire process. The stru
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::09a4112d5bc29c777b9c1c426850a476
https://doi.org/10.1016/j.sse.2006.07.013
https://doi.org/10.1016/j.sse.2006.07.013
Autor:
Ezatollah Arzi, Michael Robertson, Jaber Derakhshandeh, F. Karbassian, Henry H. Radamson, S. Mohajerzadeh, Yaser Abdi, Pouya Hashemi, Fatemeh Dehghan Nayeri
Publikováno v:
Materials Science and Engineering: B. :483-487
The preparation of porous silicon films by DC-plasma hydrogenation and subsequent annealing of amorphous silicon films on silicon and glass substrates is reported for the first time. The effects of ...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::166bfc3b78244043e91731650e8ab133
https://doi.org/10.1016/j.mseb.2005.08.090
https://doi.org/10.1016/j.mseb.2005.08.090
Autor:
Mohammad Mahdavi, Nina Zehfroosh, F. Karbassian, Shams Mohajerzadeh, Mehran Shahmohammadi, N. Sadeghi
Publikováno v:
Proceedings IMCS 2012.
High performance ISFETs by means of a layer of poly Si nanostructures placed on the gate oxide has been fabricated. The pre-deposited poly Si layer has been treated in a RIE (Reactive Ion Etching) sequential etching/passivation process to attain poro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7c0accf0a87e8f2b44a2419b50ffa62e
https://doi.org/10.5162/imcs2012/p2.5.5
https://doi.org/10.5162/imcs2012/p2.5.5
Publikováno v:
2011 IEEE Nanotechnology Materials and Devices Conference.
SiO 2 nanostructures have been fabricated by sequential etching/passivation treatment of an amorphous SiO 2 layer, using mixture of SF 6 , H 2 and O 2 gases. Photoluminescence measurements depicts that nano-textured SiO 2 films have emission spectra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::29b0c8032188974147776775fb2c510a
https://doi.org/10.1109/nmdc.2011.6155380
https://doi.org/10.1109/nmdc.2011.6155380
Publikováno v:
2011 IEEE Nanotechnology Materials and Devices Conference.
In this paper, we have applied artificial neural network (ANN) for modeling and simulation of nanoscale filed effect diodes (FEDs). The simulation is based on ANN model which reduces the computational time while keeping the accuracy of physics-based
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ea6ea00f20f5af04bd18f60befd61989
https://doi.org/10.1109/nmdc.2011.6155353
https://doi.org/10.1109/nmdc.2011.6155353