Zobrazeno 1 - 10
of 74
pro vyhledávání: '"F. Kanjouri"'
Publikováno v:
Iranian Journal of Physics Research, Vol 14, Iss 4, Pp 221-224 (2015)
In this work, we calculated the phonon dispersion of GaNNTs (4,0) and (4,4) by quantum ESPRESSO package using Density Functional Theory (DFT), pseudo potentials, and plane wave self-consistent field (PWscf) method. For the purpose of lattice-dynamica
Externí odkaz:
https://doaj.org/article/fe28267f38ae43fc8163e40a3fa4987f
Akademický článek
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Publikováno v:
Applied Surface Science. 487:801-806
The recently predicted penta-RuS4 monolayer with high stability, large nontrivial band gap and robustness against oxidation is promising for applications in nanoelectronics. The band structure of this material exhibits unique characteristics under th
Autor:
S Gowdini, F Kanjouri
Publikováno v:
Physica Scripta. 97:055801
Strong spin–orbit coupling and lack of inversion symmetry in monolayer transition metal dechalcogenides has made these materials as a promising candidate for both spintronic and valleytronic applications. We investigate the effect of adjustable par
Publikováno v:
Results in Physics, Vol 10, Iss, Pp 616-627 (2018)
Recently, hybrid organic-inorganic perovskite (HOIP) solar cells with AMX3-perovskite-based photovoltaics have opened up a new paradigm in solar cell fabrication. Among numerous studies on these novel materials, there are limited researches that comp
Autor:
F. Kanjouri, Farzaneh Ghasemzadeh
Publikováno v:
Science China Technological Sciences. 61:535-541
In this study the structural and electronic properties of III-nitride monolayers XN (X=B, Al, Ga and In) under different percentages of homogeneous and shear strain are investigated using the full potential linearized augmented plane wave within the
Publikováno v:
Protection of Metals and Physical Chemistry of Surfaces. 53:773-779
The electronic structures and optical properties of XC (X = Ge, Sn, Si) nanosheets are investigated in the present study using the full potential linearized augment plane wave (FP-LAPW) technique based on the first principles density-functional theor
Publikováno v:
Journal of Electronic Materials. 46:6214-6223
Based on first-principles calculations with generalized gradient approximation as exchange-correlation functional, the structural, electronic, mechanical, thermal, and phonon properties of III-phosphide binary compounds, namely BP, AlP, GaP, and InP,
Publikováno v:
Silicon. 10:869-877
We have investigated the electronic structures and optical properties of pristine and full-fluorinated SnC nanosheets using the full potential linearized augmented plane wave [FP-LAPW] technique based on the first principles density-functional theory
Publikováno v:
Physical chemistry chemical physics : PCCP. 21(15)
Previous studies of electronic transport in molybdenum disulfide (MoS2) are restricted to the first order approximation of the Hamiltonian. In this paper, to obtain more exact results, we firstly present an analytical solution for the Hamiltonian of