Zobrazeno 1 - 10
of 1 428
pro vyhledávání: '"F. K Reinhart"'
Autor:
Denis Martin, J. F. Ryan, Michele Ferrara, A. C. Maciel, U. Marti, R. Cingolani, F. Morier‐Gemoud, Ross Rinaldi, F. K. Reinhart
Publikováno v:
Scopus-Elsevier
We report measurements of hot-carrier photoluminescence from GaAs V-groove quantum wires. CW spectra reveal distinct one-dimensional subbands: at low excitation density recombination from laterally confined nv=1 states is dominant, which shows that c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b592d4f7270ef99eda73c71ac287f276
https://doi.org/10.1088/0268-1242/9/5s/133
https://doi.org/10.1088/0268-1242/9/5s/133
Autor:
C. Kiener, A. C. Maciel, Denis Martin, J. M. Freyland, F. K. Reinhart, J. F. Ryan, Lucio Rota, U. Marti, K. Turner, F. Morier-Gemoud
Publikováno v:
Hot Carriers in Semiconductors ISBN: 9781461380351
Trapping into the active region is one of the most important design considerations in quantum well lasers. This process becomes crucial for the operation of quantum wire devices since the very small active volume demands strong coupling to the extern
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7545445496123d645fd9c1bea46381f4
https://ora.ox.ac.uk/objects/uuid:f297315a-ab61-468d-9800-4ae420d3aeab
https://ora.ox.ac.uk/objects/uuid:f297315a-ab61-468d-9800-4ae420d3aeab
Autor:
K. Turner, J. F. Ryan, F. K. Reinhart, A. C. Maciel, U. Marti, F. Morier‐Gemoud, Denis Martin, Lucio Rota, C. Kiener, J. M. Freyland
Note: Ecole polytech fed lausanne,dept micro & optoelectr,ch-1015 lausanne,switzerland. Ryan, JF, UNIV OXFORD,CLARENDON LAB,DEPT PHYS,PARKS RD,OXFORD OX1 3PU,ENGLAND. ISI Document Delivery No.: TZ177 Cited References: ANTHONY CJ, 1994, SEMICOND SCI T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fe15a7f81ed3c4104cd5a3e461f6216f
https://ora.ox.ac.uk/objects/uuid:82cdbe52-bb5a-4d11-8ee1-56fa816d5f43
https://ora.ox.ac.uk/objects/uuid:82cdbe52-bb5a-4d11-8ee1-56fa816d5f43
Autor:
R. Cingolani, Adriano Cola, F. K. Reinhart, Lorenzo Vasanelli, U. Marti, M. De Vittorio, Ross Rinaldi
Publikováno v:
Journal of Applied Physics. 80:936-940
We report a clear evidence of bistability in the current–voltage characteristics of p‐i‐n heterostructures containing InGaAs V‐shaped quantum wires. The observed phenomenon is explained in the framework of a single carrier transport model in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::89293b5f69864e439bc98b80f3185e21
https://doi.org/10.1063/1.362904
https://doi.org/10.1063/1.362904
The refractive index of AlxGa1−xAs below the band gap: Accurate determination and empirical modeling
Publikováno v:
Journal of Applied Physics. 87:7825-7837
The refractive indices of AlxGa1−xAs epitaxial layers (0.176⩽x⩽1) are accurately determined below the band gap to wavelengths, λ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1b15d1639473dd3c939b42ca5e9a5334
https://doi.org/10.1063/1.373462
https://doi.org/10.1063/1.373462
Publikováno v:
Physica B: Condensed Matter. :729-732
To identify the defects responsible for anomalous electronic properties at the molecular-beam-epitaxy regrown interface, the interfaces of Si-doped GaAs epitaxial layers (n=7×1016 cm−3) have been investigated. A significant reduction of the carrie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::178b265e54171150ff8473e414d93756
https://doi.org/10.1016/s0921-4526(99)00624-9
https://doi.org/10.1016/s0921-4526(99)00624-9
Publikováno v:
Physical Review B. 60:11601-11610
Near infrared Brillouin scattering and high resolution x-ray diffraction is used for a precise determination of the elastic constants and the relaxed lattice parameters of ${\mathrm{Al}}_{x}{\mathrm{Ga}}_{1\ensuremath{-}x}\mathrm{As}$ epitaxial layer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::976980d225c37afe11c0db34dc04083d
https://doi.org/10.1103/physrevb.60.11601
https://doi.org/10.1103/physrevb.60.11601
Publikováno v:
Journal of Applied Physics. 86:259-266
The effects of background n- and p-type doping on Zn diffusion in GaAs/AlGaAs multilayered structures are investigated by secondary-ion-mass spectrometry and photoluminescence measurements. Zn diffusions are performed at 575 degrees C into Si-doped,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8e3eb41f5cf36a46a4b957cca71c1868
https://doi.org/10.1063/1.370724
https://doi.org/10.1063/1.370724
Autor:
F. K. Reinhart, Nguyen Hong Ky
Publikováno v:
Journal of Applied Physics. 83:718-724
Strong evidence for amphoteric native defect reactions is obtained by photoluminescence analysis of Si-doped GaAs samples (n≈1.5×1018 cm−3) annealed under different conditions. Annealing in excess As4 vapor creates a large concentration of Ga va
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c078af6749231b2342f78d760e6a2634
https://doi.org/10.1063/1.366743
https://doi.org/10.1063/1.366743
Autor:
M. Pfister, Santos F. Alvarado, M. B. Johnson, F. K. Reinhart, H.W.M. Salemink, U. Marti, F. Morier-Genoud, Denis Martin
Publikováno v:
Applied Surface Science. :516-521
Investigating the ternary InxGa1−xAs alloy (x ∼ 12%) by cross-sectional scanning tunneling microscopy, we find that on the UHV-cleaved (110) surface the In distribution in both the surface and the first subsurface layer can be atomically resolved
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::adf88a62ce839364b5ed0b7148325f7c
https://doi.org/10.1016/s0169-4332(96)00196-1
https://doi.org/10.1016/s0169-4332(96)00196-1