Zobrazeno 1 - 10
of 35
pro vyhledávání: '"F. Judong"'
Autor:
Bertrand Szelag, D. Muller, C. Rossato, F. Judong, Alexandre Giry, F. Blanchet, O. Noblanc, A. Monroy Aguirre, Raphaël Sommet, Denis Pache
Publikováno v:
IEEE Transactions on Electron Devices. 54:861-868
The optimization of the small and large signal performances of a radio frequency (RF)-LDMOS is presented via the achievement of a novel LDMOS architecture. Specific process steps are introduced into a 0.25-mum BiCMOS technology and precisely describe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a97399fc2dce77d9aba868e74bd18894
https://doi.org/10.1109/ted.2007.892355
https://doi.org/10.1109/ted.2007.892355
Publikováno v:
ECS Transactions. 2:13-21
While most of the SiO2 etch processes for microelectronics focus on very small dimensions, some specific embedded applications require thick oxide etching. For the purpose of a thick damascene copper layer, the morphological properties of a C5F8 (oct
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::59900c645cd8a6f16d983f95752ce8df
https://doi.org/10.1149/1.2204813
https://doi.org/10.1149/1.2204813
Publikováno v:
Microelectronic Engineering. 55:269-275
Various methods of copper filling are studied as interconnect metallizations in advanced ultra large scale integration (ULSI) devices. The filling mode comprising organometallic chemical vapor deposition (OMCVD) Cu followed by physical vapor depositi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e6e0c41567c8dabdf9c9ce623bb753d4
https://doi.org/10.1016/s0167-9317(00)00456-1
https://doi.org/10.1016/s0167-9317(00)00456-1
Publikováno v:
2006 International Electron Devices Meeting.
This papers presents new results on silicon I-MOS devices, (where the source and the drain are doped of opposite type) obtained by an adaptation of a conventional CMOS process. Fabricated devices are fully functional down to 55nm of gate length, but
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f65a39c680b7bb33cd12bdc693e289a8
https://doi.org/10.1109/iedm.2006.346983
https://doi.org/10.1109/iedm.2006.346983
Autor:
H. Bilgen, Alexandre Giry, F. Judong, J. Mourier, C. Arnaud, Denis Pache, D. Muller, A. Monroy, Bertrand Szelag
Publikováno v:
2006 Bipolar/BiCMOS Circuits and Technology Meeting.
An asymmetrical spacer LDMOSFET integrated in a 0.25μm BiCMOS technology is presented. Improved RF performances are obtained with this new architecture: fT close to 35GHz with BVds larger than 15V. Process integration strategy is discussed. Impact o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d0d58b984a956c9ed3de2b154154c86a
https://doi.org/10.1109/bipol.2006.311114
https://doi.org/10.1109/bipol.2006.311114
Autor:
F. Pourchon, Roland Pantel, C. Raya, F. Judong, B. Geynet, G. Avenier, Pascal Chevalier, F. Saguin, L. Rubaldo, Alain Chantre, B. Barbalat, B. Vandelle, T. Schwartzmann
Publikováno v:
2006 Bipolar/BiCMOS Circuits and Technology Meeting.
This paper presents investigations led to simplify the collector module of SiGeC HBTs in order to reduce technology cost. Outcome of this work is an HBT featuring an all-implanted collector with record fT and fmax (>250 GHz)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::46ebe491610619a326e3b0f1ef244a28
https://doi.org/10.1109/bipol.2006.311148
https://doi.org/10.1109/bipol.2006.311148
Autor:
M. Proust, Didier Dutartre, G. Borot, Nicolas Zerounian, Alain Chantre, C. Richard, B. Vandelle, Pascal Chevalier, F. Saguin, Frédéric Aniel, F. Judong, B. Barbalat, L. Rubaldo
Publikováno v:
2006 Bipolar/BiCMOS Circuits and Technology Meeting.
This paper deals with the integration of a metallic emitter in a high-speed SiGe HBT technology. An innovative integration process called PRETCH is detailed, along with static and high-frequency electrical results. Hall Effect measurements down to 20
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::641fb47525e33767cd2b6511a5571281
https://doi.org/10.1109/bipol.2006.311166
https://doi.org/10.1109/bipol.2006.311166
Autor:
Alain Chantre, P. Bouillon, B. Vandelle, B. Rauber, F. Judong, L. Boissonnet, A. Perrotin, G. Avenier, L. Rubaldo, Pascal Chevalier, Didier Dutartre
Publikováno v:
2006 Bipolar/BiCMOS Circuits and Technology Meeting.
We demonstrate the integration, in 0.13μm thin SOI CMOS technology, of low-cost high-performance high-voltage LDMOS and HBT transistors. These specific devices are obtained, without affecting CMOS core process devices. Static and dynamic characteris
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::20409189bacd44f49d0e63e00a539194
https://doi.org/10.1109/bipol.2006.311124
https://doi.org/10.1109/bipol.2006.311124
Autor:
C. Perrot, F. Allain, P. Rivallin, A. Vandooren, Nicolas Loubet, F. Salvetti, Sorin Cristoloveanu, S. Orain, F. Payet, L. Brevard, Frederic Boeuf, K. Romanjek, Claire Fenouillet-Beranger, Carlos Mazure, C. Charbuillet, O. Faynot, D. Delille, P. Scheblin, Thomas Skotnicki, Ian Cayrefourcq, Vincent Fiori, Stephane Monfray, M. Hopstaken, C. Gallon, F. Judong, Bruno Ghyselen, A. Toffoli
Publikováno v:
2006 IEEE international SOI Conferencee Proceedings.
The fully depleted (FD) SOI MOSFET is generally considered as one of the best candidates for next CMOS technology nodes. However, new technological boosters need to be introduced in the classical FD SOI process flow to reach the very aggressive Ion/I
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e18c8b9efe029a4f18ef115cde469f33
https://doi.org/10.1109/soi.2006.284410
https://doi.org/10.1109/soi.2006.284410
Autor:
R Wacquez, Antoine Cros, Robin Cerutti, Philippe Coronel, Damien Lenoble, Pascal Masson, F. Judong, Nicolas Loubet, S. Harrison, Thomas Ernst, B. Guillaumot, D. Fleury, D. Delille, Thomas Skotnicki, M.-P. Samson, Francois Leverd, N. Vuillet, J. Bustos, S. Borel, A. Pouydebasque
Publikováno v:
International Conference on Solid State Devices and Materials (SSDM)
International Conference on Solid State Devices and Materials (SSDM), Sep 2006, Yokohama, Japan. pp.534-535
International Conference on Solid State Devices and Materials (SSDM), Sep 2006, Yokohama, Japan. pp.534-535
International audience
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7284a963ab5cf2bf945fae66433994a6
https://hal.science/hal-00525089
https://hal.science/hal-00525089
