Zobrazeno 1 - 10 of 34 pro vyhledávání: '"F. J. Tams"'
2
The influence of ultrathin predeposited platinum layers on the formation of iridium silicide
Autor: J. H. Thomas, F. J. Tams, D. M. Hoffman, H. Gilmartin, L. R. Hewitt, A.‐M. Lanzillotto, D. J. Szostak, J. T. McGinn
Publikováno v: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 9:456-460
An investigation was made of Pt–Ir silicide films on (100)Si prepared by deposition of submonolayer thickness of Pt followed by 20–30 A of Ir. Submonolayer coverages of Pt induce a crystalline texture approaching an epitaxial relationship between
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c5c5d28e6b5d77e9f3323d8394c17fb0
https://doi.org/10.1116/1.577432
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3
Oxygen monitors for aluminum and Al–O thin films
Autor: F. J. Tams, J. J. O’Neill, R. S. Irven, T. J. Faith
Publikováno v: Journal of Vacuum Science and Technology. 19:709-716
Methods for detecting increases in oxygen concentration in aluminum‐based integrated‐circuit (IC) metallizations through increases in monitor‐film resistivity have been developed. Since the resistivity of the IC film is itself not sensitive to
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1399bc83733e884f0cc0ccf22d120c1e
https://doi.org/10.1116/1.571091
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4
An x‐ray photoelectron spectroscopy/Auger electron spectroscopy study of titanium–palladium thin films on silicon(111)
Autor: J. T. McGinn, F. J. Tams, J. H. Thomas, D. M. Hoffman
Publikováno v: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 5:1617-1620
Thin films of palladium (30 A) on titanium (4–12 A) were evaporated on silicon at 250 °C in a standard electron beam evaporator. Auger elemental depth profiling and angle resolved x‐ray photoelectron spectroscopy show that titanium inverts posit
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::982111167f676ea2f08fd4e521ea1b9a
https://doi.org/10.1116/1.574576
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5
Effect of thin titanium interfacial layers on the formation of palladium silicide on silicon
Autor: D. M. Hoffman, J. T. McGinn, J. H. Thomas, F. J. Tams
Publikováno v: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 5:1941-1945
Thin titanium and palladium were deposited on (100) and (111) silicon at 250 °C by an electron beam in a vacuum of 10−6 to 10−7 Torr. Analysis by transmission electron microscopy, x‐ray photoelectron spectroscopy, Auger, and Rutherford backsca
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e0b33fc8353ae6c8c10c21c49d699e55
https://doi.org/10.1116/1.574885
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7
The Influence of Predeposition of Nonolayer Thin Titanium Filns Upon the Crystallography of Subsequently Formed Pd2Si Layers on (100) Silicon
Autor: F. J. Tams, J. H. Thomas, J. T. McGinn, D. M. Hoffman
Publikováno v: MRS Proceedings. 83
This paper reports upon a new technique for the formation of epitaxial Pd2Si on (100) silicon using thin predeposited titanium layers. Improvements in the quality of epitaxy in Pd2Si on {111} silicon by this technique will also be shown. A preliminar
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::22ed42f1cf27778791617b1534b2dab6
https://doi.org/10.1557/proc-83-231
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