Zobrazeno 1 - 5
of 5
pro vyhledávání: '"F. J. Jedema"'
Correlation of morphology and electrical properties of nanoscale TiSi2 epitaxial islands on Si (001)
Publikováno v:
Scopus-Elsevier
The morphology and electrical properties of nanoscale epitaxial islands of TiSi 2 are explored. The TiSi 2 islands are prepared by ultra-high vacuum (UHV) deposition of ultra-thin Ti (0.3–2 nm) on both smooth and roughened Si (001) substrates. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::39ae118a18ede60de5ef948de65b0a5a
https://doi.org/10.1016/s0040-6090(97)00431-8
https://doi.org/10.1016/s0040-6090(97)00431-8
Autor:
F. J. Jedema, M. A. A. in 't Zandt, R. A. M. Wolters, D. Tio Castro, G. A. M. Hurkx, R. Delhougne, D. J. Gravesteijn, K. Attenborough
Publikováno v:
STARTPAGE=43;ENDPAGE=45;TITLE=None
For phase change random access memory applications, the scaling perspective of the 3 main programming parameters is essential. The programming time will largely determine the obtainable data rate. The required programming current will largely determi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::99a39491715e8c6ec695be2e3d3b41fb
https://doi.org/10.1109/nvsmw.2008.18
https://doi.org/10.1109/nvsmw.2008.18
Publikováno v:
Nature. 416(6883)
Johnson suggests that our results are not due to spin transport but rather are caused by spurious effects, in particular the anisotropic magneto resistance of the ferromagnetic contacts. However, our experiment was designed explicitly to eliminate an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::fdf85c68c9c70065ba2194eb9addc4dc
https://pubmed.ncbi.nlm.nih.gov/11976673
https://pubmed.ncbi.nlm.nih.gov/11976673
Publikováno v:
MRS Proceedings. 448
The morphologies of nanoscale epitaxial islands of TISi2 are studied. The islands are prepared by deposition of ultrathin Ti (3-20Å) on both smooth and roughened.Si(001) substrates. The island formation is initiated by annealing to 800-1000°C. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::989726c4a173aa2340742a305b2a0b82
https://doi.org/10.1557/proc-448-223
https://doi.org/10.1557/proc-448-223
Publikováno v:
Applied Physics Letters, 87(20):203501, 203501-1/3. American Institute of Physics
A solid-state memory concept is discussed, featuring a removable data carrier on which information is stored in a pattern of magnetic bits. The information is read out with a sensor array of magnetic tunnel junctions. The calculated readout signals o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8f0ff59959cc6139d404dd2fd36a752c
https://doi.org/10.1063/1.2128488
https://doi.org/10.1063/1.2128488