Zobrazeno 1 - 10
of 28
pro vyhledávání: '"F. J. Hohn"'
Publikováno v:
Microelectronic Engineering. 21:409-417
This article describes an exploratory study of miniaturization of metal oxide semiconductor field effect transistors (MOSFETs) to 100nm dimensions. The study has provided a first demonstration of MOSFETs which meet 100nm design rules for all critical
Autor:
F. J. Hohn
Publikováno v:
Physics World. 6:33-38
The ability to pack ever increasing amounts of memory and computing power onto semiconductor chips has been a crucial component in the continued growth of the electronics and information technology industries. This trend, known as very-large-scale in
Publikováno v:
Microelectronic Engineering. 13:151-156
Achieving 0.25μm performance in a shaped electron beam tool has required not only enhancements to hardware and software, but also refined techniques for optimizing and monitoring resist image quality and spot placement accuracy. A compact test patte
Autor:
M. G. Rosenfield, Dan Moy, M.R. Wordeman, Karen Petrillo, F. J. Hohn, Yuan Taur, C.S. Oh, M. Rodriguez, J.J. Bucchignano, H. Ng, Bijan Davari, W.H. Chang
Publikováno v:
Technical Digest., International Electron Devices Meeting.
A high-performance 0.25- mu m CMOS (complementary metal oxide semiconductor) technology with a reduced operating voltage of 2.5 V is presented. A loaded ring oscillator (NAND FI=FO=3. C/sub w/=0.2 pF) delay per stage of 280 ps achieved (W/sub eff//L/
Autor:
F. J. Hohn
Publikováno v:
NANOLITHOGRAPHY: A Borderland between STM, EB, IB, and X-Ray Lithographies ISBN: 9789048143887
Generations of micron and sub-micron devices have been built based on the availability and extendibility of “conventional” technologies as they are used today in 4 Mbit DRAM and 16 Mbit DRAM. This holds true for the device technology, for lithogr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cac8841b683d0ccde703614ad3782438
https://doi.org/10.1007/978-94-015-8261-2_1
https://doi.org/10.1007/978-94-015-8261-2_1
Autor:
Kaolin Grace Chiong, F. J. Hohn
Publikováno v:
SPIE Proceedings.
In the fabrication of sub-quarter micron devices, the key components needed to realize this task must be fully integrated. The lithography capability and subsequent device processing control must be understood by the device designers and the device t
Autor:
F. J. Hohn
Publikováno v:
SPIE Proceedings.
Two major categories of electron beam lithography systems have been developed over the course of many years: Direct write of chips on silicon, and patterning of optical masks on quartz and glass substrates. This paper addresses this dual role and wha
Autor:
M. G. R. Thomson, C. R. Blair, M. G. Rosenfield, R. P. Volant, F. J. Hohn, P. J. Coane, K. T. Kwietniak, T. H. Newman, K. S. Tremaine, J. Keller, D. Klaus
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 11:2615
Direct write electron‐beam lithography is the most flexible technique for sub‐0.25 μm imaging in an advanced development environment. The resolution and custom exposure capabilities of electron‐beam lithography, as well as the rapid turnaround
Autor:
Y. T. Lii, F. J. Hohn, Shalom J. Wind, D. Klaus, J. Keller, C. M. Reeves, R. P. Volant, B. Tebin, J.J. Bucchignano, T. H. Newman
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 10:2917
Ultracompact n‐channel silicon metal–oxide–semiconductor field effect transistors (MOSFETs) have been fabricated using electron beam nanolithography for all critical levels leading to a first demonstration of silicon MOSFETs which meet 100 nm g
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 10:2764
High‐voltage (≥50 kV) electron beam lithography (EBL) is the preferred technique for fabrication of additive‐process x‐ray masks, because the high‐voltage minimizes scattering in the resist and membrane, resulting in better resolution, stra