Zobrazeno 1 - 9
of 9
pro vyhledávání: '"F. J. Gagliardi"'
Publikováno v:
Propellants, Explosives, Pyrotechnics.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8d92174b2838290f68325f2f2c0b9c0c
https://doi.org/10.1002/prep.202200337
https://doi.org/10.1002/prep.202200337
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 10:1462-1466
A graded refractive index silicon oxynitride (SiOxNy) thin film was prepared on a silicon substrate by ion assisted deposition. Spectroscopic ellipsometry (SE) was used to optically analyze the film. The measured SE spectra (2500–8200 A) were analy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::beafa5798db191e2e9d0d20d925d93ea
https://doi.org/10.1116/1.578266
https://doi.org/10.1116/1.578266
Autor:
Yi‐Ming ‐M Xiong, F. J. Gagliardi, John A. Woollam, Paul G. Snyder, L. J. Mizerka, G. A. Al-Jumaily
Publikováno v:
Surface and Interface Analysis. 18:124-128
Silicon oxynitride (SiO x N y ) thin films were deposited on silicon substrates by ion-assisted deposition. Variable angle spectroscopic ellipsometry (VASE) was used to optically characterize thedeposited film properties, such as layer thickness and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3e9bf5f18790ef2c6cd3b927bdebdd00
https://doi.org/10.1002/sia.740180211
https://doi.org/10.1002/sia.740180211
Autor:
F. J. Gagliardi, G. A. Al-Jumaily, Yi Ming Xiong, John A. Woollam, Eric R. Krosche, Paul G. Snyder
Publikováno v:
Thin Solid Films. 206:248-253
Silicon oxynitride (SiOxNy) films were deposited on silicon substrates by ion-assisted deposition (IAD) and low pressure chemical vapor deposition (LPCVD). Variable angle spectroscopic ellipsometry (VASE) was used to characterize the deposited films
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::763185186d84a5b7e10aebd3e37e7722
https://doi.org/10.1016/0040-6090(91)90430-6
https://doi.org/10.1016/0040-6090(91)90430-6
Publikováno v:
SPIE Proceedings.
Graded index coatings of silicon oxynitride have been deposited using ion assisted deposition (IAD). During the IAD process the coated surface is bombarded with low energy reactive ions such that the chemical properties of the coating can be changed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::12be1b5f99b210aa408b7dc5cfddbc6b
https://doi.org/10.1117/12.57218
https://doi.org/10.1117/12.57218
Autor:
G. A. Al-Jumaily, F. J. Gagliardi, P. McColl, Yi-Ming Xiong, P. G. Snyder, J. A. Woollam, L. J. Mizerka
Publikováno v:
Optical Society of America Annual Meeting.
Graded-index coatings of silicon oxynitride have been deposited using ion assisted deposition. Discrete and graded-index coatings have been deposited by evaporation of silicon and bombardment with a mixture of nitrogen and oxygen ions. Optical proper
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b1725d36b80ebfec7b6b11967d83baa1
https://doi.org/10.1364/oam.1991.tupp5
https://doi.org/10.1364/oam.1991.tupp5
Publikováno v:
Optical Society of America Annual Meeting.
There is an increasing interest in nitride and oxynitride coatings of silicon for optical and microelectronic applications. Silicon oxynitride has an index of refraction that can be varied between 2.1 and 1.45 by varying the oxygen-to-nitrogen ratio.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e48c33a0f8b268945e406542399267c7
https://doi.org/10.1364/oam.1990.thm4
https://doi.org/10.1364/oam.1990.thm4
Publikováno v:
Optical Society of America Annual Meeting.
Deposition of dielectric coatings by reactive sputtering is widely used in the microelectronic industry. The application of the process for the deposition of optical coatings has been very limited. In this report we outline results in our effort to a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6202fb67ee44bd3205c7b11c8f9aa85a
https://doi.org/10.1364/oam.1990.we4
https://doi.org/10.1364/oam.1990.we4