Zobrazeno 1 - 10
of 43
pro vyhledávání: '"F. J. Feigl"'
Publikováno v:
Journal of Applied Physics. 69:2512-2521
This work examines the electrical behavior of metal‐oxide‐semiconductor capacitors in which positive charge has been generated in the silicon dioxide layer using either avalanche hole injection, avalanche electron injection, or Fowler‐Nordheim
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ff78b361393a9e385e4d5cda52d7f5fd
https://doi.org/10.1063/1.348689
https://doi.org/10.1063/1.348689
Publikováno v:
Journal of Physics and Chemistry of Solids. 51:407-415
An optical absorption and electron paramagnetic resonance (EPR) study has been performed on a series of chemically reduced congruent lithium niobate (LiNbO3) samples. Chemical reduction enhances the high-temperature electrical conductivity and darken
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1417e26a29f52d32c9365deb5b786130
https://doi.org/10.1016/0022-3697(90)90175-f
https://doi.org/10.1016/0022-3697(90)90175-f
Publikováno v:
Solid State Communications. 14:225-229
An (oxygen)- vacancy model of the E1≈ center in alpha quartz, featuring an asymmetric relaxation of the two silicons adjacent to the oxygen vacancy, is presented and analyzed. This model is shown to be consistent with both theoretical calculations
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3e4116602dfc5d9a0a53deaed0b0f842
https://doi.org/10.1016/0038-1098(74)90840-0
https://doi.org/10.1016/0038-1098(74)90840-0
Photocurent spectroscopy in thin-film insulators: Voltage dependence of the external-circuit current
Autor:
F. J. Feigl, D. J. DiMaria
Publikováno v:
Physical Review B. 9:1874-1883
An analytical model for trapping state photodepopulation measurements in conductor-thin film insulator-conductor structures is presented. The external circuit current dependence on applied voltage is determined, and it is shown that moments of the sp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9a35662fee59d7fd133e5b67843d99ee
https://doi.org/10.1103/physrevb.9.1874
https://doi.org/10.1103/physrevb.9.1874
Publikováno v:
Journal of The Electrochemical Society. 126:149-154
Chlorine has been incorporated into thin films by thermal oxidation of Si in a mixture of and gases. Controlled amounts of mobile sodium ions were adsorbed on the free surface and drifted to the interface to study Na+ neutralization in these oxides.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fb089fbf1c8524c2eeb7966b8560007d
https://doi.org/10.1149/1.2128972
https://doi.org/10.1149/1.2128972
Publikováno v:
Journal of Electronic Materials. 14:343-366
We have investigated the effects of different annealing treatments on silicon dioxide films produced from the reaction of dichlorosilane and nitrous oxide at 700° C. The electrical quality of these LPCVD films was evaluated by measuring oxide charge
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::539e5b7545716dddb0cddb4de3e478ca
https://doi.org/10.1007/bf02661227
https://doi.org/10.1007/bf02661227
Publikováno v:
Journal of The Electrochemical Society. 126:143-149
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::615d7915e0bffc0d0d51d1b59827b2c2
https://doi.org/10.1149/1.2128971
https://doi.org/10.1149/1.2128971
Publikováno v:
Journal of Applied Physics. 48:739-749
The energy and spatial distributions of electrons trapped in the silicon‐dioxide layer of a metal‐oxide‐semiconductor structure have been determined. Visible–near‐uv trap photodepopulation techniques have been used measure these electron di
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::218410acc86c0434bdbed2c4f4d24048
https://doi.org/10.1063/1.323664
https://doi.org/10.1063/1.323664
Publikováno v:
Journal of Applied Physics. 62:1913-1919
The behavior of the controlling feedback voltage during constant current avalanche hole injection experiments on metal‐oxide‐semiconductor capacitors has been analyzed in detail. It is concluded that at dc hole current densities greater than 50 n
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fa669b2affc43c8a20016bf3f6b86ad1
https://doi.org/10.1063/1.339580
https://doi.org/10.1063/1.339580
Publikováno v:
Journal of Physics and Chemistry of Solids. 35:1425-1428
Optical absorption, electron paramagnetic resonance absorption, and thermoluminescence have been measured in germanium-doped quartz crystals which have been X-irradiated at room temperature and subsequently heated. Strong bleaching of the 280 nm opti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::be95cb0dfcf42572b3159ab907932849
https://doi.org/10.1016/s0022-3697(74)80248-9
https://doi.org/10.1016/s0022-3697(74)80248-9