Zobrazeno 1 - 10
of 25
pro vyhledávání: '"F. J. Clough"'
Autor:
F. J. Clough, Shashi Paul
Publikováno v:
Microelectronic Engineering. 70:78-82
Deposition of gate insulator in the arsenic-based compound semiconductors (such as GaAs, AlGaAs), always causes stoichiometric changes in these materials. The deposition of any materials above 350 °C results in the segregation of As at the surface o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d38c1a9176678ad58bbce0a659ee7adb
https://doi.org/10.1016/s0167-9317(03)00393-9
https://doi.org/10.1016/s0167-9317(03)00393-9
Autor:
F. J. Clough, Shashi Paul
Publikováno v:
Scopus-Elsevier
This paper reports the fabrication and electrical characterization of sub-micron metal contacts to thin films of hydrogenated amorphous carbon deposited by the r.f.-plasma enhanced chemical vapour deposition technique. The I–V characteristics of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bf8ec826c0e34c4690a42473256b082a
https://doi.org/10.1016/s0925-9635(98)00313-6
https://doi.org/10.1016/s0925-9635(98)00313-6
Publikováno v:
Thin Solid Films. 270:517-521
This work describes the deposition, annealing and characterisation of semi-insulating oxygen-doped silicon films at temperatures compatible with polysilicon circuitry on glass. The semi-insulating layers are deposited by the plasma enhanced chemical
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c7cac7b18431199506d3f31a91e53bd9
https://doi.org/10.1016/0040-6090(95)06834-1
https://doi.org/10.1016/0040-6090(95)06834-1
Publikováno v:
Microelectronic Engineering. 28:451-454
This work describes the annealing and characterisation of semi-insulating oxygen-doped silicon films deposited by the Plasma Enhanced Chemical Vapour Deposition (PECVD) technique from silane (SiH4), nitrous oxide (N2O) and helium (He) gas mixtures. T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5e722c904a1e16b5c5a6a43e05773e5e
https://doi.org/10.1016/0167-9317(95)00095-p
https://doi.org/10.1016/0167-9317(95)00095-p
Autor:
Shashi Paul, F. J. Clough
Publikováno v:
Microelectronics Reliability. 42:141-143
The reliability of metal contacts to amorphous diamond-like carbon (DLC) is important. It has been proposed by various workers that DLC can be used as a low dielectric material. In the light of this, we have investigated the reliability of devices th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c7efeb7acc073e41964b26b5d3953e97
https://doi.org/10.1016/s0026-2714(01)00133-0
https://doi.org/10.1016/s0026-2714(01)00133-0
Publikováno v:
International Journal of Neural Systems. :327-332
To apply neural networks to many engineering applications, large networks will be required. Such networks are difficult to build using standard crystalline silicon technology due to limitations in both the fabrication and packaging processes. An arch
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8e672d1fdc842f51f8986be8c047b659
https://doi.org/10.1142/s0129065793000262
https://doi.org/10.1142/s0129065793000262
Publikováno v:
Journal of Applied Physics. 73:2895-2901
We demonstrate that differing transistor characteristics in the most important material systems can be explained by the defect pool model applied to the defects near the interface of hydrogenated amorphous silicon thin film transistors. Gate dielectr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5cdb3b4daa27f87cfd5d64861b7f3e64
https://doi.org/10.1063/1.353019
https://doi.org/10.1063/1.353019
Autor:
S. Paul, F. J Clough
Publikováno v:
Review of Scientific Instruments. 72:3543-3545
Amorphous and polycrystalline materials show different electrical properties when the contact area is in the submicron range. A large number of instruments (such as combinations of scanning electron microscope and scanning tunneling microscope) have
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1fbb6ca62296a822a7b024792d5b7c22
https://doi.org/10.1063/1.1389490
https://doi.org/10.1063/1.1389490
Autor:
S. Paul, F. J. Clough
Publikováno v:
Applied Physics Letters. 78:1415-1417
It is considered impossible to form Schottky contacts on amorphous hydrogenated carbon (a-C:H). Taking the lead from our earlier work in which we report the formation of Schottky contacts on radio frequency plasma enhanced chemical vapor deposition (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f8261c3a705134fee893851c5d697882
https://doi.org/10.1063/1.1344593
https://doi.org/10.1063/1.1344593
Publikováno v:
IEEE Electron Device Letters. 20:80-82
Experimental measurements and two-dimensional (2-D) numerical simulation have been used to investigate the impart of the polycrystalline silicon (poly-Si) density of states (DOS) and channel dimensions on the transient response of poly-Si thin-film t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d0523243ce1f6ca85afdd0b79518c9c6
https://doi.org/10.1109/55.740658
https://doi.org/10.1109/55.740658