Zobrazeno 1 - 9
of 9
pro vyhledávání: '"F. J. Ciuba"'
Autor:
P. A. Grudowski, J. E. Fouquet, Archie L. Holmes, F. J. Ciuba, Russell D. Dupuis, J. G. Neff, M.R. Islam, R.V. Chelakara, K. G. Fertitta
Publikováno v:
Journal of Electronic Materials. 24:787-792
AlGaAs double heterostructures are grown by low-pressure metalorganic chemical vapor deposition to evaluate the level of oxygen contamination in different trimethylaluminum sources. Effects of arsine purifiers, misoriented substrates, atmospheric exp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::26c2091810f758e8b5b10b088ecb8b5f
https://doi.org/10.1007/bf02659741
https://doi.org/10.1007/bf02659741
Publikováno v:
Journal of Electronic Materials. 24:257-261
In this paper, we describe the growth and characterization of high-quality GaN heteroepitaxial films grown on basal-plane sapphire substrates using metalorganic chemical vapor deposition. The quality of these films is analyzed by a variety of methods
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::afbca85a9e268a494dbb5062800b8fe6
https://doi.org/10.1007/bf02659684
https://doi.org/10.1007/bf02659684
Publikováno v:
Journal of Crystal Growth. 145:746-751
GaP/InGaP and GaP/GaAsP strained-layer quantum well (QW) structures with 3.0-5.0 nm thick well layers in the direct gap region were grown on GaP substrates by metalorganic chemical vapor deposition (MOCVD) using triethylgallium (TEGa) and ethyldimeth
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5e7ef6ec2b964223872c04fafc108d30
https://doi.org/10.1016/0022-0248(94)91137-1
https://doi.org/10.1016/0022-0248(94)91137-1
Autor:
R.V. Chelakara, M.R. Islam, Russell D. Dupuis, J. G. Neff, F. J. Ciuba, Archie L. Holmes, K. G. Fertitta
Publikováno v:
Journal of Crystal Growth. 145:179-186
In this paper, we present results of studies of high-quality InGaP quantum well (QW) heterostructures grown by metalorganic chemical vapor deposition (MOCVD). The QWs have been grown on GaAs: Si substrates having orientations of both (100) and (100)-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bbab13e5eb5f22a82bf89023ba8f365b
https://doi.org/10.1016/0022-0248(94)91047-2
https://doi.org/10.1016/0022-0248(94)91047-2
Autor:
J. G. Neff, P. A. Grudowski, R. V. Chelakara, K. G. Fertitta, F. J. Ciuba, Russell D. Dupuis, M.R. Islam, Archie L. Holmes
Publikováno v:
Proceedings of IEE/LEOS Summer Topical Meetings: Integrated Optoelectronics.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::44569da56d746953b3ce16c85afbc18d
https://doi.org/10.1109/leosst.1994.700530
https://doi.org/10.1109/leosst.1994.700530
Autor:
R. V. Chelakara, F. J. Ciuba, M.R. Islam, Nick Holonyak, Russell D. Dupuis, E. I. Chen, Steven A Maranowski, M. J. Ries, Archie L. Holmes
Publikováno v:
Applied Physics Letters. 66:2831-2833
The growth and fabrication of high‐quality vertical distributed Bragg reflectors (DBRs) utilizing layers of InAlP and the AlAs native oxide are reported. The III–V epitaxial structures employed in this work consist of alternating layers of InAlP
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::23201940317ab2c713b113571bb0e749
https://doi.org/10.1063/1.113444
https://doi.org/10.1063/1.113444
Publikováno v:
Applied Physics Letters. 65:1823-1825
We report the growth of high‐quality GaN heteroepitaxial films on (0001) sapphire substrates by low‐pressure metalorganic chemical vapor deposition. These films have exhibited narrow x‐ray‐diffraction rocking curves with full‐width‐at‐h
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e8ee8f9c295f84c44d9166126bece3a4
https://doi.org/10.1063/1.112855
https://doi.org/10.1063/1.112855
Autor:
K. G. Fertitta, T. A. Richard, J. G. Neff, K. C. Hsieh, M.R. Islam, Nick Holonyak, R. V. Chelakara, Russell D. Dupuis, F. J. Ciuba, Archie L. Holmes
Publikováno v:
Applied Physics Letters. 65:854-856
The growth and laser operation of high‐quality InAlP‐InGaP superlattice‐active‐region quantum‐well heterostructure lasers on GaAs substrates are reported. These heterostructures exhibit cw room‐temperature (300 K) optically pumped laser o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6d07f1c1482059b40b15c2c2ba92d096
https://doi.org/10.1063/1.112181
https://doi.org/10.1063/1.112181
Publikováno v:
Electronics Letters. 30:1252-1254
The authors report the growth and characterisation of high-quality GaN films grown on (0001)-oriented sapphire (Al2O3) substrates by metal organic chemical vapour deposition (MOCVD). These films were analysed using five-crystal X-ray diffraction, opt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dba581b5cbb29772d4c8c124fbc11b20
https://doi.org/10.1049/el:19940820
https://doi.org/10.1049/el:19940820