Zobrazeno 1 - 10
of 85
pro vyhledávání: '"F. Houzay"'
Publikováno v:
Microscopy of Semiconducting Materials, 1987
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0855a4fd33b06c8b3ce029f39f237d09
https://doi.org/10.1201/9781003069621-11
https://doi.org/10.1201/9781003069621-11
Autor:
Jean-Michel Gérard, N. Lebouché, F. Houzay, L. Leprince, F. Barthe, J. M. Moison, J. Y. Marzin
Publikováno v:
Applied Surface Science. 92:526-531
Spontaneous patterning of strained deposits can be put to use for fabricating quantum dots. We evaluate this technique in the case of InAs GaAs . It is shown that the requirements for optoelectronic devices (dot size, homogeneity, optical yield, etc.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f0b086081fda697d6cc40f9abecb1270
https://doi.org/10.1016/0169-4332(95)00289-8
https://doi.org/10.1016/0169-4332(95)00289-8
Publikováno v:
Physical Review B. 46:7923-7926
Photoemission measurements at the InAs/GaAs (001) interfaces following insertion of interfacial silicon reveal large core-level shifts. For InAs-on-GaAs junctions, Si-induced potential steps across the interface, up to 0.2 eV for one monolayer of Si,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c4ea4880894924d99966e832047b5cf9
https://doi.org/10.1103/physrevb.46.7923
https://doi.org/10.1103/physrevb.46.7923
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 10:2172-2177
GaAs (100) covered with its native oxides is exposed to increasing doses of low energy atomic hydrogen in order to test the possibility of using it for surface cleaning at moderate temperatures. Hydrogen molecules are dissociated using a hot filament
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b7d6cf8468eccea3fc480f60f526421d
https://doi.org/10.1116/1.578000
https://doi.org/10.1116/1.578000
Publikováno v:
Surface Science. :902-908
The (100) surface of InP covered with its native oxides has been exposed to increasing doses of atomic hydrogen and studied by surface-sensitive techniques. Carbon and oxygen coverages which cannot be desorbed by thermal cleaning can be completely re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::40261386e2911cafe74d543fdc064301
https://doi.org/10.1016/0039-6028(92)91367-k
https://doi.org/10.1016/0039-6028(92)91367-k
Differences in the SiO2/InP interfaces obtained by thermal and UV-induced chemical vapour deposition
Publikováno v:
Applied Surface Science. :789-794
The interface between InP covered by its native oxide and SiO2 is built up the thermal or UV-assisted chemical vapour deposition from silane precursor gas. It is analyzed in situ by X-ray photoemission spectroscopy in an ultra-high-vacuum environment
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6fec6457665da9b220bd0a90ec927dc8
https://doi.org/10.1016/0169-4332(92)90339-y
https://doi.org/10.1016/0169-4332(92)90339-y
Autor:
J. M. Moison, F. Houzay, B. Jusserand, J. Massies, F. Barthe, Jean-Michel Gérard, F.S. Turco-Sandroff
Publikováno v:
Journal of Crystal Growth. 111:141-150
Recent measurements which demonstrate the occurrence of surface segregation during the MBE growth of IIIaIIIb–V ternary semiconductor alloys and IIIa–V/IIIb–V heterostructures are reviewed. This preferential segregation drives to the surface on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fdd6168dedbf13958abc45f7080ddf6c
https://doi.org/10.1016/0022-0248(91)90962-5
https://doi.org/10.1016/0022-0248(91)90962-5
Publikováno v:
Applied Surface Science. 46:175-188
New chemical vapour deposition (CVD) processes controlled by light irradiation are studied and applied to III–V semiconductor device technology. The interactions between the incident photons and the gas-substrate system are either photolytic (UV la
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::27b2eb1a51e6e3755cf65b72ca2f6407
https://doi.org/10.1016/0169-4332(90)90139-q
https://doi.org/10.1016/0169-4332(90)90139-q
Autor:
J. Y. Marzin, F. Houzay, M. Bensoussan, J. M. Moison, K. Elcess, Jean-Michel Gérard, F. Barthe
Publikováno v:
Physical Review B. 41:12945-12948
Etude par photoluminescence. Mise en evidence d'un couplage des etats confines avec les etats de surface localises pres des limites des bandes. Ceci confirme les effets de l'interface et du confinement sur les etats des electrons dans les systemes a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e21f9e2e184226de8c8c05f543071065
https://doi.org/10.1103/physrevb.41.12945
https://doi.org/10.1103/physrevb.41.12945
Publikováno v:
Applied Physics Letters. 64:196-198
The deposition of InAs on GaAs proceeds first by two‐dimensional (2D) growth and above a 1.75‐monolayer coverage by the formation of single‐crystal dots on a residual 2D wetting layer. By atomic force microscopy measurements, we show that the f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d073086e6611937d1b471d616baf7148
https://doi.org/10.1063/1.111502
https://doi.org/10.1063/1.111502