Zobrazeno 1 - 10
of 42
pro vyhledávání: '"F. Hottier"'
Autor:
F. Hottier, A. Collet Billon
Publikováno v:
3D Imaging in Medicine ISBN: 9783642842139
3D echography is still in its infancy but recent preliminary clinical results reveal exciting potentialities. Echography presents specific characteristics which have to be exploited when designing a 3D ultrasound system. After reviewing the various s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4d16ea5923cd4a63a3ffabf326391d2d
https://doi.org/10.1007/978-3-642-84211-5_2
https://doi.org/10.1007/978-3-642-84211-5_2
Publikováno v:
Ultrasonic Imaging. 13:203-204
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::24ba5a7f52e3f45a304ab733b028873b
https://doi.org/10.1016/0161-7346(91)90120-7
https://doi.org/10.1016/0161-7346(91)90120-7
Autor:
R. Cadoret, F. Hottier
Publikováno v:
Journal of Crystal Growth. 61:259-274
The kinetics of monocrystalline Si deposition on slightly misoriented {111}Si substrates from SiH4 diluted in H2 at reduced pressures is theoretically analysed in terms of a condensation process of Si atoms and SiH4 molecules, taking surface diffusio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7a462467e9e8eefe2a57103efab73308
https://doi.org/10.1016/0022-0248(83)90362-7
https://doi.org/10.1016/0022-0248(83)90362-7
Publikováno v:
Revue de Physique Appliquée
Revue de Physique Appliquée, Société française de physique / EDP, 1981, 16 (10), pp.579-589. ⟨10.1051/rphysap:019810016010057900⟩
Revue de Physique Appliquée, Société française de physique / EDP, 1981, 16 (10), pp.579-589. ⟨10.1051/rphysap:019810016010057900⟩
Fast ellipsometers have made feasible real-time assessment of heterostructure growth in a vapour phase ambient. A fast ellipsometer/MO-VPE experimental system is described and the possibilities of in situ ellipsometry are investigated in the case of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1e2066456a842cecdb48306b08391b7f
https://doi.org/10.1051/rphysap:019810016010057900
https://doi.org/10.1051/rphysap:019810016010057900
Publikováno v:
Journal of Crystal Growth. 46:245-252
A fast automatic ellipsometer is associated with an organometallic CVD system for a surface analysis of GaAlAs/GaAs heterostructures during their growth. The capabilities of the ellipsometer are first illustrated: a real time determination of the rat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a9124266151ad6f68107a3e1deb8cec2
https://doi.org/10.1016/0022-0248(79)90064-2
https://doi.org/10.1016/0022-0248(79)90064-2
Autor:
R. Cadoret, F. Hottier
Publikováno v:
Journal of Crystal Growth. 52:199-206
A comprehensive view of the growth mechanisms occuring during the deposition of polycrystalline or monocrystalline thin silicon films clearly is an important step towards controlling the growth process. Experimental results concerning the growth kine
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3fe7397397f23e951845f952a3e8c19c
https://doi.org/10.1016/0022-0248(81)90194-9
https://doi.org/10.1016/0022-0248(81)90194-9
Publikováno v:
Journal of Crystal Growth. 55:198-206
The capabilities of a fast ellipsometer associated with a MOVPE system are investigated in the case of (Al, Ga) As-GaAs heterostructure growth. Ellipsometric angles are related to the composition, the growth rate and the surface properties at the gro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0acd082069c53736265b035d68475fc4
https://doi.org/10.1016/0022-0248(81)90288-8
https://doi.org/10.1016/0022-0248(81)90288-8
Publikováno v:
Journal of Applied Physics. 51:1599-1602
In situ ellipsometry has been used to monitor the growth of GaAs‐GaAlAs superlattices by a metalorganic VPE process. The thickness and the regularity of the successive layers can thus be determined. Analysis of transition widths between successive
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d230b552c74d18a2b05ccd27ef920829
https://doi.org/10.1063/1.327815
https://doi.org/10.1063/1.327815
Publikováno v:
Physical Review B. 20:3292-3302
Using measured dielectric function data from 2.1 to 5.5 eV for chemical-vapor-deposition---grown smooth amorphous ($a$-Si) and microscopically rough fine-grained polycrystalline ($p$-Si) films, we show that the dielectric properties of microscopicall
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::886171285355a71f94232daa2760ff3f
https://doi.org/10.1103/physrevb.20.3292
https://doi.org/10.1103/physrevb.20.3292
Autor:
F. Hottier, J.B. Theeten
Publikováno v:
Journal of Crystal Growth. 48:644-654
Several systems are described which enable surface analysis of a sample to be made during its processing in a vapour phase epitaxy chamber, GaAs homoepitaxy, using the H2-GaCl-As4 species, is discussed as a surface limited system and evidence of an a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a5c8df95913ec0045d43803fdfd3e30b
https://doi.org/10.1016/0022-0248(80)90275-4
https://doi.org/10.1016/0022-0248(80)90275-4