Zobrazeno 1 - 10
of 29
pro vyhledávání: '"F. H. P. M. Habraken"'
Autor:
S. van den Boogaart, J. Maessen, F.C.M.J.M. van Delft, J. G. Kloosterboer, W. Catsburg, F. H. P. M. Habraken, E. J. K. Verstegen
Publikováno v:
Microelectronic Engineering. :540-545
Copolymers of methylmethacrylate (MMA) and trimethylsilyl-methylmethacrylate (SiMMA) in various molar ratios have been synthesised and characterised for use as a resist in electron beam lithography. The development procedure has been optimised in ter
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e6e12c1a30fece7d55cc40ede22223f6
https://doi.org/10.1016/j.mee.2004.12.068
https://doi.org/10.1016/j.mee.2004.12.068
Autor:
N. Tomozeiu, A. van Veen, A. Shiryaev, Romain Delamare, T. Bus, W. M. Arnoldbik, F. H. P. M. Habraken, Esidor Ntsoenzok, Antonio Rivera, M.A. van Huis
Publikováno v:
The European Physical Journal Applied Physics. 23:11-18
Results of the comprehensive study of deuterium-implanted hexagonal SiC (4H and 6H) using optical absorption and infrared measurements, elastic recoil detection analysis, thermal desorption and positron annihilation spectroscopies are reported. It is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d68abeef386a3ba81d681d683a663b25
https://doi.org/10.1051/epjap:2002116
https://doi.org/10.1051/epjap:2002116
Publikováno v:
Physical Review B. 61:10133-10141
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::63fbcb1521f5a467a3ac8431d5fbcbb8
https://doi.org/10.1103/physrevb.61.10133
https://doi.org/10.1103/physrevb.61.10133
Autor:
Nikolaos Vouroutzis, F. H. P. M. Habraken, Ch. B. Lioutas, W. M. Arnoldbik, Yue Kuo, E. C. Paloura
Publikováno v:
Journal of Applied Physics. 80:5742-5747
The effect of bonded hydrogen in the atomic microstructure of nitrogen‐rich SiNx:H films is investigated using extended x‐ray‐absorption fine‐structure spectroscopy (EXAFS). The hydrogen concentration in the examined films, as measured by ela
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::177dd11752e36650924208dcbfadcf53
https://doi.org/10.1063/1.363628
https://doi.org/10.1063/1.363628
Publikováno v:
Microelectronic Engineering. 28:141-144
LPCVD silicon nitride films have been oxidised in an oxygen plasma using low thermal budget plasma anodisation to produce oxynitride films. The electrical integrity of these films was generally shown to improve following oxidation and a model of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0679a48ae9d36ad7088b7d0fb8a758d9
https://doi.org/10.1016/0167-9317(95)00033-5
https://doi.org/10.1016/0167-9317(95)00033-5
Autor:
W M Arnold Bik, F H P M Habraken
Publikováno v:
Reports on Progress in Physics. 56:859-902
In elastic recoil detection (ERD) one determines the yield and energy of particles ejected out of the surface region of samples under MeV ion bombardment. By application of this surface and thin film analysis technique one can obtain quantitative inf
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::591a1c6a3ff33e2a1fa272327725b1ab
https://doi.org/10.1088/0034-4885/56/7/002
https://doi.org/10.1088/0034-4885/56/7/002
Publikováno v:
Applied Physics Letters. 59:1687-1689
Doppler S‐parameter measurements have been performed on low‐pressure chemical vapor deposited (LPCVD) Si3N4 samples. Annealing of the samples at 1000 °C for times up to 1 h resulted in a decrease of both the S parameter and the positron diffusio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8fa3df414734975d4b60f9ed712a3520
https://doi.org/10.1063/1.106218
https://doi.org/10.1063/1.106218
Autor:
A. van Veen, E. H. C. Ullersma, W.G.J.H.M. van Sark, K.T. Westerduin, D. K. Inia, F. H. P. M. Habraken, W. F. van der Weg
Publikováno v:
Scopus-Elsevier
We used Fourier Transform Infra-Red (FTIR) analysis of bi-layers of plasma-grown hy-drogenated amorphous silicon-carbide films to investigate the role of the material structure in the hydrogen diffusion process. In the bi-layers one layer was deposit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::abaca96ba0e35d1bbfb35d649876cf5c
https://doi.org/10.1557/proc-467-141
https://doi.org/10.1557/proc-467-141
Autor:
W. M. Arnoldbik, F. H. P. M. Habraken
Publikováno v:
Application of Particle and Laser Beams in Materials Technology ISBN: 9789048145102
We concisely discuss aspects of the application of Elastic Recoil Detection in surface and thin film analysis.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::577857f218ef5922921f72865cc740bd
https://doi.org/10.1007/978-94-015-8459-3_20
https://doi.org/10.1007/978-94-015-8459-3_20
Publikováno v:
MRS Proceedings. 284
In the PECVD SixNyHzOw the hydrogen is principally incorporated as N-H bonds. For O/(O+N) below 0.4, the %H is constant at 25%; from 0.4 to 1, it decreases to 4%. We show that a chemical ordered model is likely to describe the hydrogen incorporation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d5d25fac00de03748310a609e28ff3b1
https://doi.org/10.1557/proc-284-363
https://doi.org/10.1557/proc-284-363