Zobrazeno 1 - 10
of 89
pro vyhledávání: '"F. H. M. Sanders"'
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. :1022-1025
Recently energy spectra of reaction products emitted during Ar+ ion bombardment induced etching of Si by SF6 condensed on top of it have been reported [8]. The Si(SF6; Ar+) system differs from all others studied to date in that multilayer adsorption
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::30f66141dd4edcea17299ef5124df90d
https://doi.org/10.1016/s0168-583x(87)80203-3
https://doi.org/10.1016/s0168-583x(87)80203-3
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 13:556-560
Etching of silicon by SF6 induced by keV Ar+ ions has been investigated as a function of target temperature and flux of SF6 molecules. The emitted species have been identified by mass spectrometry and their energy distributions have been determined b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5a2450c978e6396182c3017ffaec0708
https://doi.org/10.1016/0168-583x(86)90565-3
https://doi.org/10.1016/0168-583x(86)90565-3
Autor:
D.J. Oostra, F. H. M. Sanders, A.E. De Vries, G. N. A. van Veen, J. Dieleman, A. van der Veen
Publikováno v:
Physical Review Letters. 57:739-742
A Si substrate is bombarded by 3-keV Ar/sup +/ ions. From time-of-flight spectra of resputtered Ar neutrals at various target temperatures, we conclude that Ar-bubble formation takes place in the amorphized-Si top layer. The bubbles form and open dur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c2e285e074f74056496b40d13c278ec
https://doi.org/10.1103/physrevlett.57.739
https://doi.org/10.1103/physrevlett.57.739
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 18:625-628
Phenomena accompanying Ar+ ion sputtering of Si and SiO2, simultaneously exposed to a reactive Cl2 gas flow, are discussed. Common trends in the observed kinetic energy distributions of the emitted individual reaction products are presented along wit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b1521a9bf64f0310d57669dc2241b2e6
https://doi.org/10.1016/s0168-583x(86)80100-8
https://doi.org/10.1016/s0168-583x(86)80100-8
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. :809-813
The sputtering of silicon by argon ions in the presence of Cl2 has been studied. The kinetic energy distributions of the Si, Cl, Ar, SiCl and SiCl2 particles, ejected during bombardment, have been measured. It appears that these distributions have a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4d68d193cbfa8d50e7e4c74070391d7b
https://doi.org/10.1016/0168-583x(85)90474-4
https://doi.org/10.1016/0168-583x(85)90474-4
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 2:487-491
The reaction of Si with Cl2 alone and under simultaneous exposure to an Ar+ ion beam is investigated as a function of target temperature and Ar+ ion energy using mass spectrometry and time‐of‐flight studies. The main products of the thermal react
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5820f144796601431bdfce8ef0449698
https://doi.org/10.1116/1.572601
https://doi.org/10.1116/1.572601
Publikováno v:
Applied Physics Letters. 46:1166-1168
Sputtering of silicon by 3‐keV Ar+ ions in the presence of a molecular SF6 beam has been investigated by mass spectrometry and time‐of‐flight measurements. At temperatures below 100 K chemical reactions are induced between the silicon and an ad
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9f59cbc740b2c2797d4069becefa84de
https://doi.org/10.1063/1.95746
https://doi.org/10.1063/1.95746
Publikováno v:
Journal of The Electrochemical Society. 124:1458-1459
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::12f7b7b8cb22f5dc0b60515e0471287c
https://doi.org/10.1149/1.2133676
https://doi.org/10.1149/1.2133676
Publikováno v:
In Microelectronics Reliability 1984 24(6):1100-1100
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 3:1384
The sputtering yield of Si when bombarded with a flux φAr+ of low‐energy Ar+ ions may be enhanced a few times when the Si surface is exposed simultaneously to Cl2 fluxes φCl2 about one order of magnitude larger than φAr+. The mechanism of this s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::96bf1696c0ece03e08bba0def5ae9602
https://doi.org/10.1116/1.582997
https://doi.org/10.1116/1.582997