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pro vyhledávání: '"F. H. Long"'
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Publikováno v:
Scopus-Elsevier
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::24e8b9254b8bc6b82c76acc81d4a0626
https://doi.org/10.4028/www.scientific.net/msf.338-342.1623
https://doi.org/10.4028/www.scientific.net/msf.338-342.1623
Autor:
I.I. Khlebnikov, Mathew Parker, F. H. Long, Tangali S. Sudarshan, Yuri I. Khlebnikov, J.C. Burton
Publikováno v:
Materials Science Forum. :615-618
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::37fc9bffb179a5fe66efe514cbf7df47
https://doi.org/10.4028/www.scientific.net/msf.338-342.615
https://doi.org/10.4028/www.scientific.net/msf.338-342.615
Publikováno v:
MRS Internet Journal of Nitride Semiconductor Research. 5:803-809
We have used time-resolved photoluminescence (PL), with 400 nm (3.1 eV) excitation, to examine InxGa1−xN/GaN light-emitting diodes (LEDs) before the final stages of processing at room temperature. We have found dramatic differences in the time-reso
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::42fe91170582b60213410b63278eec3a
https://doi.org/10.1557/s109257830000510x
https://doi.org/10.1557/s109257830000510x
Publikováno v:
physica status solidi (b). 216:803-806
We have used confocal Raman microscopy to investigate lateral epitaxially overgrown (LEO) GaN on sapphire substrates. The one-phonon Raman spectra are consistent with pyramidal growth of the GaN before coalescence has occurred. The position and asymm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::80cc5704198109899776b20ac5610da7
https://doi.org/10.1002/(sici)1521-3951(199911)216:1<803::aid-pssb803>3.0.co
https://doi.org/10.1002/(sici)1521-3951(199911)216:1<803::aid-pssb803>3.0.co
Publikováno v:
Journal of Applied Physics. 86:2073-2077
Electronic Raman scattering from nitrogen defect levels in SiC is seen to be significantly enhanced with excitation by red (633 nm, 1.98 eV) or near-IR (785 nm, 1.58 eV) laser light at room temperature. Four nitrogen peaks are observed in 6H–SiC (3
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::125fa49e000c35c1f4857c6485b0acc7
https://doi.org/10.1063/1.371011
https://doi.org/10.1063/1.371011
Publikováno v:
The Journal of Physical Chemistry B. 103:6648-6652
We have investigated the optical properties of Vectra A910, a commercially produced liquid-crystalline copolyester consisting of 4-hydroxybenzoic acid and 6-hydroxy-2-naphthoic acid subunits. The p...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::781155d5a64be9061a503c152dd435c6
https://doi.org/10.1021/jp984785v
https://doi.org/10.1021/jp984785v
Publikováno v:
Journal of Applied Physics. 86:1114-1118
We have used time-resolved photoluminescence to examine InGaN/GaN multiple quantum wells (MQWs) and light-emitting diodes (LEDs) before the final stages of processing at room temperature. The photoluminescence kinetics are well described by a stretch
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c98d754a85ac0f4a12a08007a3f5f444
https://doi.org/10.1063/1.370865
https://doi.org/10.1063/1.370865
Autor:
Zhe Chuan Feng, S. J. Lukacs, Linlin Sun, F. H. Long, J. C. Burton, Milan Pophristic, Ian T. Ferguson
Publikováno v:
Journal of Applied Physics. 84:6268-6273
Raman spectroscopy has been used to investigate wafers of both 4H–SiC and 6H–SiC. The wafers studied were semi-insulating and n-type (nitrogen) doped with concentrations between 2.1×1018 and 1.2×1019 cm−3. Significant coupling of the A1 longi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::50f3b8936261a334cb56f8135f76424f
https://doi.org/10.1063/1.368947
https://doi.org/10.1063/1.368947
Autor:
Deborah Freedman, Thomas J. Emge, Jongseong Lee, Jonathan Melman, F. H. Long, Meggan Brewer, John G. Brennan, Lei Sun
Publikováno v:
Inorganic Chemistry. 37:2512-2519
A series of trivalent lanthanide (Ln) benzenechalcogenolate (EPh, E = S, Se) complexes have been prepared and structurally characterized in an attempt to evaluate how metal size, chalcogen, and solvent influence structure and physical properties. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::14cb5abdb08414fec9f60de0a98dd1f4
https://doi.org/10.1021/ic9716161
https://doi.org/10.1021/ic9716161