Zobrazeno 1 - 10
of 737
pro vyhledávání: '"F. H. Long"'
Publikováno v:
Bulletin des Sociétés Chimiques Belges. 82:591-603
300 MHz spectra are obtained for cis-, and trans-2-trlfluoromethyl-4-(chloro) methyl-1, 3-dioxolanes. A comparative study with other 2, 4-disubstituted and 2, 2-bis trifluoromethyl trisubstituted dioxolanes, allows the assignment of each of the H-5 a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1a2136bd7479d0c1797ed2061c77c487
https://doi.org/10.1002/bscb.19730820713
https://doi.org/10.1002/bscb.19730820713
Akademický článek
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Publikováno v:
Chemischer Informationsdienst. 5
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b7921e720df16210a86645b13d68fc69
https://doi.org/10.1002/chin.197408075
https://doi.org/10.1002/chin.197408075
Akademický článek
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Autor:
Kim, Ji‐Ye1,2 (AUTHOR), Kahttana, Ibadullah3 (AUTHOR), Yoon, Hyonok4 (AUTHOR), Chang, Sunhee1 (AUTHOR), Yoon, Sun Och2 (AUTHOR) soyoon@yuhs.ac
Publikováno v:
Cancer Medicine. Oct2024, Vol. 13 Issue 19, p1-12. 12p.
Publikováno v:
Scopus-Elsevier
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::24e8b9254b8bc6b82c76acc81d4a0626
https://doi.org/10.4028/www.scientific.net/msf.338-342.1623
https://doi.org/10.4028/www.scientific.net/msf.338-342.1623
Autor:
I.I. Khlebnikov, Mathew Parker, F. H. Long, Tangali S. Sudarshan, Yuri I. Khlebnikov, J.C. Burton
Publikováno v:
Materials Science Forum. :615-618
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::37fc9bffb179a5fe66efe514cbf7df47
https://doi.org/10.4028/www.scientific.net/msf.338-342.615
https://doi.org/10.4028/www.scientific.net/msf.338-342.615
Publikováno v:
MRS Internet Journal of Nitride Semiconductor Research. 5:803-809
We have used time-resolved photoluminescence (PL), with 400 nm (3.1 eV) excitation, to examine InxGa1−xN/GaN light-emitting diodes (LEDs) before the final stages of processing at room temperature. We have found dramatic differences in the time-reso
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::42fe91170582b60213410b63278eec3a
https://doi.org/10.1557/s109257830000510x
https://doi.org/10.1557/s109257830000510x
Publikováno v:
physica status solidi (b). 216:803-806
We have used confocal Raman microscopy to investigate lateral epitaxially overgrown (LEO) GaN on sapphire substrates. The one-phonon Raman spectra are consistent with pyramidal growth of the GaN before coalescence has occurred. The position and asymm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::80cc5704198109899776b20ac5610da7
https://doi.org/10.1002/(sici)1521-3951(199911)216:1<803::aid-pssb803>3.0.co
https://doi.org/10.1002/(sici)1521-3951(199911)216:1<803::aid-pssb803>3.0.co
Publikováno v:
Journal of Applied Physics. 86:2073-2077
Electronic Raman scattering from nitrogen defect levels in SiC is seen to be significantly enhanced with excitation by red (633 nm, 1.98 eV) or near-IR (785 nm, 1.58 eV) laser light at room temperature. Four nitrogen peaks are observed in 6H–SiC (3
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::125fa49e000c35c1f4857c6485b0acc7
https://doi.org/10.1063/1.371011
https://doi.org/10.1063/1.371011